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Results: 1-25 | 26-28
Results: 1-25/28
ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY
Authors: ALIEU J SOUIFI A BREMOND G BOUILLON P SKOTNICKI T
Citation: J. Alieu et al., ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1675-1678
INFLUENCE OF CARBON ON THE ELECTRICAL-PROPERTIES OF W SIGEC-P/SI(100)-P SCHOTTKY DIODES/
Authors: SERPENTINI M BREMOND G AUBRYFORTUNA V MEYER F MAMOR M
Citation: M. Serpentini et al., INFLUENCE OF CARBON ON THE ELECTRICAL-PROPERTIES OF W SIGEC-P/SI(100)-P SCHOTTKY DIODES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1684-1686
EFFECT OF HYDROGENATION ON MISFIT DISLOCATIONS IN SIGE SI STRUCTURES FOR PHOTOVOLTAIC APPLICATIONS/
Authors: DAAMI A BREMOND G CAYMAX M POORTMANS J
Citation: A. Daami et al., EFFECT OF HYDROGENATION ON MISFIT DISLOCATIONS IN SIGE SI STRUCTURES FOR PHOTOVOLTAIC APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1737-1739
INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: SOUIFI A DEBARROS O BREMOND G LETRON B MOUIS M VINCENT G ASHBURN P
Citation: A. Souifi et al., INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1745-1749
OPTICAL SPECTROSCOPY OF TITANIUM-DOPED CDZNTE
Authors: DAMMAK M ALAYA S ZERRAI A BREMOND G TRIBOULET R
Citation: M. Dammak et al., OPTICAL SPECTROSCOPY OF TITANIUM-DOPED CDZNTE, Semiconductor science and technology, 13(7), 1998, pp. 762-768
SI SIGE VALENCE-BAND OFFSET DETERMINATION USING PHOTOLUMINESCENCE ANDDLTS IN SIGE QUANTUM-WELL MOS CAPACITORS/
Authors: GAMEZCUATZIN H DAAMI A GARCHERY L SAGNES I CAMPIDELLI Y BREMOND G
Citation: H. Gamezcuatzin et al., SI SIGE VALENCE-BAND OFFSET DETERMINATION USING PHOTOLUMINESCENCE ANDDLTS IN SIGE QUANTUM-WELL MOS CAPACITORS/, Microelectronic engineering, 43-4, 1998, pp. 669-676
PROPERTIES OF CD1-XZNXTE CRYSTALS GROWN BY HIGH-PRESSURE BRIDGMAN FORNUCLEAR-DETECTION
Authors: FOUGERES P HAGEALI M KOEBEL JM SIFFERT P HASSAN S LUSSON A TRIBOULET R MARRAKCHI G ZERRAI A CHERKAOUI K ADHIRI R BREMOND G KAITASOV O RUAULT MO CRESTOU J
Citation: P. Fougeres et al., PROPERTIES OF CD1-XZNXTE CRYSTALS GROWN BY HIGH-PRESSURE BRIDGMAN FORNUCLEAR-DETECTION, Journal of crystal growth, 185, 1998, pp. 1313-1318
PROPERTIES OF THE TITANIUM RELATED LEVEL IN CD0.96ZN0.04TE CRYSTALS
Authors: ZERRAI A BREMOND G
Citation: A. Zerrai et G. Bremond, PROPERTIES OF THE TITANIUM RELATED LEVEL IN CD0.96ZN0.04TE CRYSTALS, Journal of applied physics, 84(10), 1998, pp. 5554-5559
POOLE-FRENKEL-EFFECT ASSISTED EMISSION FROM DEEP DONOR LEVEL IN CHROMIUM-DOPED GAP
Authors: AJJEL R ZAIDI MA ALAYA S BREMOND G GUILLOT G BOURGOIN JC
Citation: R. Ajjel et al., POOLE-FRENKEL-EFFECT ASSISTED EMISSION FROM DEEP DONOR LEVEL IN CHROMIUM-DOPED GAP, Applied physics letters, 72(3), 1998, pp. 302-304
ROLE OF ZINC IN THE OPTICAL-PROPERTIES OF VANADIUM-DOPED CDZNTE
Authors: DAMMAK M ALAYA S BREMOND G TRIBOULET R
Citation: M. Dammak et al., ROLE OF ZINC IN THE OPTICAL-PROPERTIES OF VANADIUM-DOPED CDZNTE, Semiconductor science and technology, 12(7), 1997, pp. 888-893
QUANTIFICATION OF GERMANIUM AND BORON IN HETEROSTRUCTURES SI SI1-XGEX/SI BY SIMS/
Authors: PRUDON G GAUTIER B DUPUY JC DUBOIS C BONNEAU M DELMAS K VALLARD JP BREMOND G BRENIER R
Citation: G. Prudon et al., QUANTIFICATION OF GERMANIUM AND BORON IN HETEROSTRUCTURES SI SI1-XGEX/SI BY SIMS/, Thin solid films, 294(1-2), 1997, pp. 54-58
RECOMBINATION MECHANISMS VIA DEEP LEVELS IN RTCVD SI SI0.85GE0.15/SI DOUBLE HETEROSTRUCTURES/
Authors: GAMEZCUATZIN H DEBARROS O BREMOND G WARREN P DUTARTRE D
Citation: H. Gamezcuatzin et al., RECOMBINATION MECHANISMS VIA DEEP LEVELS IN RTCVD SI SI0.85GE0.15/SI DOUBLE HETEROSTRUCTURES/, Thin solid films, 294(1-2), 1997, pp. 194-197
THERMAL EMISSION OF HOLES FROM CONFINED LEVELS IN STRAINED SIGE CHANNEL P-MOSFETS
Authors: GAMEZCUATZIN H MARCHAND JJ BREMOND G GARCHERY L CAMPIDELLI Y BERENGUER M
Citation: H. Gamezcuatzin et al., THERMAL EMISSION OF HOLES FROM CONFINED LEVELS IN STRAINED SIGE CHANNEL P-MOSFETS, Thin solid films, 294(1-2), 1997, pp. 211-213
CHARACTERIZATION OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: DEBARROS O SOUIFI A LETRON B VINCENT G BREMOND G
Citation: O. Debarros et al., CHARACTERIZATION OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Thin solid films, 294(1-2), 1997, pp. 271-273
CHARACTERIZATION OF HIGH-QUALITY RTCVD RELAXED SI1-XGEX GROWN ON GE GRADED BUFFER LAYERS ON SI BY PHOTOLUMINESCENCE SPECTROSCOPY
Authors: BREMOND G SOUIFI A DEBARROS O BENMANSOUR A DUCROQUET F WARREN P DUTARTRE D
Citation: G. Bremond et al., CHARACTERIZATION OF HIGH-QUALITY RTCVD RELAXED SI1-XGEX GROWN ON GE GRADED BUFFER LAYERS ON SI BY PHOTOLUMINESCENCE SPECTROSCOPY, Journal of electronic materials, 25(7), 1996, pp. 1023-1027
ELECTRICAL CHARACTERIZATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS AND SI PSEUDO-HBTS
Authors: DEBARROS O LETRON B WOODS RC GIROULTMATLAKOWSKI G VINCENT G BREMOND G
Citation: O. Debarros et al., ELECTRICAL CHARACTERIZATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS AND SI PSEUDO-HBTS, Applied surface science, 102, 1996, pp. 212-216
INFLUENCE OF ZINC ON THE PHOTOREFRACTIVE BEHAVIOR OF CD1-XZNXTE-V
Authors: MARTEL G MOISAN JY LAMBERT B GAUNEAU M STEPHAN S WOLFFER N GRAVEY P AOUDIA A RZEPKA E MARFAING Y TRIBOULET R BUSCH MC HADJALI M KOEBEL JM SIFFERT P BREMOND G ZERRAI A MARRAKCHI G
Citation: G. Martel et al., INFLUENCE OF ZINC ON THE PHOTOREFRACTIVE BEHAVIOR OF CD1-XZNXTE-V, Journal of crystal growth, 161(1-4), 1996, pp. 250-258
RELATIONSHIP BETWEEN DEEP LEVELS IN VANADIUM-DOPED CDTE AND PHOTOREFRACTIVE EFFECT
Authors: ZERRAI A MARRAKCHI G BREMOND G MOISAN JY MARTEL G GAUNEAU M LAMBERT B GRAVEY P WOLFFER N AOUDIA A MARFAING Y TRIBOULET R KOEBEL JM HADJALI M SIFFERT P
Citation: A. Zerrai et al., RELATIONSHIP BETWEEN DEEP LEVELS IN VANADIUM-DOPED CDTE AND PHOTOREFRACTIVE EFFECT, Journal of crystal growth, 161(1-4), 1996, pp. 264-270
CHARACTERIZATION AND IDENTIFICATION OF THE DEEP LEVELS IN V DOPED CDTE AND THEIR RELATIONSHIP WITH THE PHOTOREFRACTIVE PROPERTIES
Authors: BREMOND G ZERRAI A MARRAKCHI G AOUDIA A MARFAING Y TRIBOULET R BUSCH MC KOEBBEL JM HAGEALI M SIFFERT P MOISAN JY
Citation: G. Bremond et al., CHARACTERIZATION AND IDENTIFICATION OF THE DEEP LEVELS IN V DOPED CDTE AND THEIR RELATIONSHIP WITH THE PHOTOREFRACTIVE PROPERTIES, Optical materials, 4(2-3), 1995, pp. 246-251
PHOTOLUMINESCENCE CHARACTERIZATION OF SI1-XGEX RELAXED PSEUDO-SUBSTRATES GROWN ON SI
Authors: BREMOND G SOUIFI A DEBARROS O BENMANSOUR A WARREN P DUTARTRE D
Citation: G. Bremond et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SI1-XGEX RELAXED PSEUDO-SUBSTRATES GROWN ON SI, Journal of crystal growth, 157(1-4), 1995, pp. 116-120
EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/
Authors: SOUIFI A BENYATTOU T GUILLOT G BREMOND G DUTARTRE D WARREN P
Citation: A. Souifi et al., EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/, Journal of applied physics, 78(6), 1995, pp. 4039-4045
ELECTRON-CAPTURE AND EMISSION BY THE TI ACCEPTOR LEVEL IN GAP
Authors: ROURA P MORANTE JR GUILLOT G BREMOND G ULRICI W
Citation: P. Roura et al., ELECTRON-CAPTURE AND EMISSION BY THE TI ACCEPTOR LEVEL IN GAP, Journal of applied physics, 78(4), 1995, pp. 2441-2446
PHOTOREFRACTIVE EFFECT IN INP-FE DOMINATED BY HOLES AT ROOM-TEMPERATURE - INFLUENCE OF THE INDIRECT TRANSITIONS
Authors: OZKUL C JAMET S GRAVEY P TURKI K BREMOND G
Citation: C. Ozkul et al., PHOTOREFRACTIVE EFFECT IN INP-FE DOMINATED BY HOLES AT ROOM-TEMPERATURE - INFLUENCE OF THE INDIRECT TRANSITIONS, Journal of the Optical Society of America. B, Optical physics, 11(9), 1994, pp. 1668-1673
OPTICAL AND THERMAL SPECTROSCOPY OF VANADIUM-DOPED CDTE AND RELATED PHOTOREFRACTIVE EFFECT
Authors: RZEPKA E AOUDIA A CUNIOT M LUSSON A MARFAING Y TRIBOULET R BREMOND G MARRAKCHI G CHERKAOUI K BUSCH MC KOEBEL JM HAGEALI M SIFFERT P MOISAN JY GRAVEY P WOLFFER N MOINE O
Citation: E. Rzepka et al., OPTICAL AND THERMAL SPECTROSCOPY OF VANADIUM-DOPED CDTE AND RELATED PHOTOREFRACTIVE EFFECT, Journal of crystal growth, 138(1-4), 1994, pp. 244-248
CARRIER COMPENSATION INDUCED BY RAPID THERMAL ANNEALING IN UNDOPED INP
Authors: KADOUN A BREMOND G BARBIER D LAUGIER A TARDY J
Citation: A. Kadoun et al., CARRIER COMPENSATION INDUCED BY RAPID THERMAL ANNEALING IN UNDOPED INP, Journal of applied physics, 75(1), 1994, pp. 648-650
Risultati: 1-25 | 26-28