AAAAAA

   
Results: 1-20 |
Results: 20
CARRIER TRANSPORT MECHANISMS IN POROUS SILICON IN CONTACT WITH A LIQUID-PHASE - A DIFFUSION PROCESS
Authors: GELLOZ B BSIESY A
Citation: B. Gelloz et A. Bsiesy, CARRIER TRANSPORT MECHANISMS IN POROUS SILICON IN CONTACT WITH A LIQUID-PHASE - A DIFFUSION PROCESS, Applied surface science, 135(1-4), 1998, pp. 15-22
INVESTIGATION OF THE QUENCHING MECHANISMS OF THE POROUS SILICON LUMINESCENCE
Authors: HORY MA BSIESY A HERINO R LIGEON M MULLER F VIAL JC
Citation: Ma. Hory et al., INVESTIGATION OF THE QUENCHING MECHANISMS OF THE POROUS SILICON LUMINESCENCE, Thin solid films, 276(1-2), 1996, pp. 130-133
CONDUCTION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE
Authors: GELLOZ B BSIESY A GASPARD F MULLER F
Citation: B. Gelloz et al., CONDUCTION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Thin solid films, 276(1-2), 1996, pp. 175-178
VOLTAGE-TUNABLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF POROUS SILICON
Authors: BSIESY A VIAL JC
Citation: A. Bsiesy et Jc. Vial, VOLTAGE-TUNABLE PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF POROUS SILICON, Journal of luminescence, 70, 1996, pp. 310-319
ORIGIN OF THE CHARGE-CARRIERS ACCUMULATION DEPLETION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE
Authors: BSIESY A GELLOZ B GASPARD F MULLER F
Citation: A. Bsiesy et al., ORIGIN OF THE CHARGE-CARRIERS ACCUMULATION DEPLETION IN POROUS SILICON CONTACTED BY A LIQUID-PHASE, Journal of applied physics, 79(5), 1996, pp. 2513-2516
SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT
Authors: ROMESTAIN R VIAL JC MIHALCESCU I BSIESY A
Citation: R. Romestain et al., SATURATION AND VOLTAGE QUENCHING OF THE POROUS SILICON LUMINESCENCE AND IMPORTANCE OF THE AUGER EFFECT, Physica status solidi. b, Basic research, 190(1), 1995, pp. 77-84
EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE
Authors: BSIESY A HORY MA GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE, Microelectronic engineering, 28(1-4), 1995, pp. 233-236
SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT
Authors: MIHALCESCU I VIAL JC BSIESY A MULLER F ROMESTAIN R MARTIN E DELERUE C LANNOO M ALLAN G
Citation: I. Mihalcescu et al., SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT, Physical review. B, Condensed matter, 51(24), 1995, pp. 17605-17613
ELECTROLUMINESCENCE FROM N(-TYPE POROUS SILICON CONTACTED WITH LAYER-BY-LAYER DEPOSITED POLYANILINE())
Authors: BSIESY A NICOLAU YF ERMOLIEFF A MULLER F GASPARD F
Citation: A. Bsiesy et al., ELECTROLUMINESCENCE FROM N(-TYPE POROUS SILICON CONTACTED WITH LAYER-BY-LAYER DEPOSITED POLYANILINE()), Thin solid films, 255(1-2), 1995, pp. 43-48
VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE
Authors: BSIESY A GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE, Thin solid films, 255(1-2), 1995, pp. 80-86
AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES
Authors: DELERUE C LANNOO M ALLAN G MARTIN E MIHALCESCU I VIAL JC ROMESTAIN R MULLER F BSIESY A
Citation: C. Delerue et al., AUGER AND COULOMB CHARGING EFFECTS IN SEMICONDUCTOR NANOCRYSTALLITES, Physical review letters, 75(11), 1995, pp. 2228-2231
POROUS SILICON - X-RAYS SENSITIVITY
Authors: GERSTENMAYER JL VIBERT P MERCIER P RAYER C HYVERNAGE M HERINO R BSIESY A
Citation: Jl. Gerstenmayer et al., POROUS SILICON - X-RAYS SENSITIVITY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 353(1-3), 1994, pp. 299-301
LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION
Authors: BSIESY A VIAL JC GASPARD F HERINO R LIGEON M MIHALCESCU I MULLER F ROMESTAIN R
Citation: A. Bsiesy et al., LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3071-3076
RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE
Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE, Applied physics letters, 65(26), 1994, pp. 3371-3373
BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT
Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R
Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602
VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE
Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE, Physical review letters, 71(4), 1993, pp. 637-640
ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE
Authors: BSIESY A MULLER F MIHALCESCU I LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE, Journal of luminescence, 57(1-6), 1993, pp. 29-32
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS
Authors: MULLER F HERINO R LIGEON M GASPARD F ROMESTAIN R VIAL JC BSIESY A
Citation: F. Muller et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS, Journal of luminescence, 57(1-6), 1993, pp. 283-292
ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON
Authors: LIGEON M MULLER F HERINO R GASPARD F VIAL JC ROMESTAIN R BILLAT S BSIESY A
Citation: M. Ligeon et al., ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON, Journal of applied physics, 74(2), 1993, pp. 1265-1271
EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION AT LOW-TEMPERATURES
Authors: AKTIK C BEERENS J BLAIN S BSIESY A
Citation: C. Aktik et al., EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE PREPARED BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION AT LOW-TEMPERATURES, Canadian journal of physics, 70(10-11), 1992, pp. 893-897
Risultati: 1-20 |