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Results: 1-14 |
Results: 14
A METHOD FOR EVALUATING STRUCTURAL AND CHEMICAL INHOMOGENEITY IN COARSE-GRAINED INGOTS OF TERNARY BI-SB-TE SOLID-SOLUTIONS
Authors: BUBLIK VT OSVENSKII VB KARATAEV VV KULIKOVA IM SAGALOVA TB SHCHERBACHEV DK FROLOV AM
Citation: Vt. Bublik et al., A METHOD FOR EVALUATING STRUCTURAL AND CHEMICAL INHOMOGENEITY IN COARSE-GRAINED INGOTS OF TERNARY BI-SB-TE SOLID-SOLUTIONS, Crystallography reports, 43(3), 1998, pp. 505-510
X-RAY DIFFUSE-SCATTERING BY MICRODEFECTS IN NONSTOICHIOMETRIC INSB SINGLE-CRYSTALS
Authors: BUBLIK VT SHCHERBACHEV KD
Citation: Vt. Bublik et Kd. Shcherbachev, X-RAY DIFFUSE-SCATTERING BY MICRODEFECTS IN NONSTOICHIOMETRIC INSB SINGLE-CRYSTALS, Crystallography reports, 42(2), 1997, pp. 286-290
SPECIFIC FEATURES OF DEFECT GENERATION IN SI-IMPLANTED GALLIUM-ARSENIDE UNDER RAPID PHOTON ANNEALING()
Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG NEMIROVSKII AV UFIMTSEV VB
Citation: Vt. Bublik et al., SPECIFIC FEATURES OF DEFECT GENERATION IN SI-IMPLANTED GALLIUM-ARSENIDE UNDER RAPID PHOTON ANNEALING(), Crystallography reports, 42(2), 1997, pp. 319-322
BEHAVIOR OF POINT RADIATION DEFECTS DURING RAPID PHOTON ANNEALING OF GAAS-LAYERS IMPLANTED WITH VARIOUS DOSES OF SI AND SE IONS
Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKI MG NEMIROVSKI AW
Citation: Vt. Bublik et al., BEHAVIOR OF POINT RADIATION DEFECTS DURING RAPID PHOTON ANNEALING OF GAAS-LAYERS IMPLANTED WITH VARIOUS DOSES OF SI AND SE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 221-224
INITIAL DECOMPOSITION STAGES OF SUPERSATU RATED SOLID-SOLUTIONS OF ARSENIC IN GERMANIUM
Authors: BUBLIK VT SHCHERBACHEV KD
Citation: Vt. Bublik et Kd. Shcherbachev, INITIAL DECOMPOSITION STAGES OF SUPERSATU RATED SOLID-SOLUTIONS OF ARSENIC IN GERMANIUM, Kristallografia, 41(5), 1996, pp. 907-912
MICRODEFECTS IN ZN-DOPED GAAS SINGLE-CRYS TALS
Authors: BUBLIK VT SHCHERBACHEV KD
Citation: Vt. Bublik et Kd. Shcherbachev, MICRODEFECTS IN ZN-DOPED GAAS SINGLE-CRYS TALS, Kristallografia, 41(5), 1996, pp. 913-917
DIFFUSE-SCATTERING BY MICRODEFECTS IN SILICON
Authors: ZOTOV NM BUBLIK VT
Citation: Nm. Zotov et Vt. Bublik, DIFFUSE-SCATTERING BY MICRODEFECTS IN SILICON, Inorganic materials, 32(7), 1996, pp. 692-695
THE STUDY OF MICRODEFECTS IN GAAS SINGLE- CRYSTALS DOPED WITH SI BY X-RAY DIFFUSE-SCATTERING
Authors: SHCHERBACHEV KD BUBLIK VT DARICHEVA OE
Citation: Kd. Shcherbachev et al., THE STUDY OF MICRODEFECTS IN GAAS SINGLE- CRYSTALS DOPED WITH SI BY X-RAY DIFFUSE-SCATTERING, Kristallografia, 40(5), 1995, pp. 868-876
MICRODEFECTS IN TE-DOPED GAAS
Authors: BUBLIK VT SHCHERBACHEV KD
Citation: Vt. Bublik et Kd. Shcherbachev, MICRODEFECTS IN TE-DOPED GAAS, Kristallografia, 40(1), 1995, pp. 122-127
THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES
Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG
Citation: Vt. Bublik et al., THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES, Kristallografia, 40(1), 1995, pp. 128-136
MICRODEFECTS IN UNDOPED GAAS SINGLE-CRYST ALS GROWN FROM THE MELTS OFDIFFERENT NONSTOICHIOMETRIC COMPOSITIONS
Authors: BUBLIK VT SHCHERBACHEV KD
Citation: Vt. Bublik et Kd. Shcherbachev, MICRODEFECTS IN UNDOPED GAAS SINGLE-CRYST ALS GROWN FROM THE MELTS OFDIFFERENT NONSTOICHIOMETRIC COMPOSITIONS, Kristallografia, 39(6), 1994, pp. 1105-1111
CLUSTERS OF NATIVE POINT-DEFECTS AND HIGH-COERCIVE STATE IN FILMS OF CA,GE-SUBSTITUTED MAGNETIC GARNET
Authors: BUBLIK VT TKALICH AK SHUPEGIN ML
Citation: Vt. Bublik et al., CLUSTERS OF NATIVE POINT-DEFECTS AND HIGH-COERCIVE STATE IN FILMS OF CA,GE-SUBSTITUTED MAGNETIC GARNET, Journal of crystal growth, 140(1-2), 1994, pp. 84-90
MEASUREMENT OF DIFFUSE-X-RAY SCATTERING ON A 3-CRYSTAL X-RAY DIFFRACTOMETER
Authors: SHCHERBACHEV KD BUBLIK VT
Citation: Kd. Shcherbachev et Vt. Bublik, MEASUREMENT OF DIFFUSE-X-RAY SCATTERING ON A 3-CRYSTAL X-RAY DIFFRACTOMETER, Industrial laboratory, 60(8), 1994, pp. 473-477
TECHNIQUE FOR DETERMINING STRESSES IN SINGLE-CRYSTALS BASED ON PRECISION-MEASUREMENTS OF INTERPLANAR DISTANCES
Authors: BUBLIK VT SAPTEV SA EM DV
Citation: Vt. Bublik et al., TECHNIQUE FOR DETERMINING STRESSES IN SINGLE-CRYSTALS BASED ON PRECISION-MEASUREMENTS OF INTERPLANAR DISTANCES, Industrial laboratory, 58(9), 1992, pp. 835-839
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