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Results:
1-16
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Results: 16
Authors:
HELAK Z
BUCZKOWSKI A
Citation: Z. Helak et A. Buczkowski, USING A WEB INTRANET FOR FAB DATA DISTRIBUTION, Solid state technology, 41(7), 1998, pp. 215
Authors:
ROMANOWSKI A
BUCZKOWSKI A
KAROUI A
ROZGONYI GA
Citation: A. Romanowski et al., FREQUENCY-RESOLVED MICROWAVE REFLECTION PHOTOCONDUCTANCE, Journal of applied physics, 83(12), 1998, pp. 7730-7735
Authors:
SCUDAMORE CH
BUCZKOWSKI A
CHUNG SW
POOSTIZADEH A
Citation: Ch. Scudamore et al., STAPLER TECHNIQUE FOR EXTRAHEPATIC VASCULAR CONTROL DURING HEPATIC RESECTION, Journal of investigative surgery, 10(1-2), 1997, pp. 59-61
Authors:
KIRSCHT FG
FURUKAWA Y
SEIFERT W
SCHMALZ K
BUCZKOWSKI A
KIM SB
ABE H
KOYA H
BAILEY J
Citation: Fg. Kirscht et al., ELECTRICAL CHARACTERISTICS OF OXYGEN PRECIPITATION RELATED DEFECTS INCZOCHRALSKI SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 230-236
Authors:
BATHE O
SCUDAMORE CH
BUCZKOWSKI A
POOSTIZADEH A
CARON I
Citation: O. Bathe et al., SURGICAL RESECTION OF HCC - SHORT VERSUS LONG INFLOW OCCLUSION, Hepatology, 24(4), 1996, pp. 1420-1420
Authors:
SCUDAMORE CH
BUCZKOWSKI A
BATHE O
WEISS A
CARON N
Citation: Ch. Scudamore et al., SURGICAL RESECTION FOR RUPTURED HCC, Hepatology, 24(4), 1996, pp. 1796-1796
Authors:
SCUDAMORE CH
CARON N
BATHE O
BUCZKOWSKI A
Citation: Ch. Scudamore et al., HEPATOCELLULAR-CARCINOMA - AGE IS NOT A CONTRAINDICATION FOR RESECTION, Hepatology, 24(4), 1996, pp. 1797-1797
Authors:
DAIO H
BUCZKOWSKI A
SHIMURA F
Citation: H. Daio et al., INFLUENCE OF CRYSTAL THERMAL HISTORY ON SURFACE RECOMBINATION LIFETIME AT ELEVATED-TEMPERATURES IN MAGNETIC-FIELD-APPLIED CZOCHRALSKI SILICON, JPN J A P 1, 33(4A), 1994, pp. 1970-1971
Authors:
KIRK HR
RADZIMSKI Z
BUCZKOWSKI A
ROZGONYI GA
Citation: Hr. Kirk et al., LOW-TEMPERATURE IDENTIFICATION OF INTERFACIAL AND BULK DEFECTS IN AL SIO2/SI CAPACITOR STRUCTURES BY ELECTRON-BEAM-INDUCED CURRENT/, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 959-963
Authors:
DAIO H
BUCZKOWSKI A
SHIMURA F
Citation: H. Daio et al., LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1590-1593
Authors:
BRAGA N
BUCZKOWSKI A
KIRK HR
ROZGONYI GA
Citation: N. Braga et al., FORMATION OF CYLINDRICAL N-P JUNCTION DIODES BY ARSENIC ENHANCED DIFFUSION ALONG INTERFACIAL MISFIT DISLOCATIONS IN P-TYPE EPITAXIAL SI SI(GE)/, Applied physics letters, 64(11), 1994, pp. 1410-1412
Authors:
RADZIMSKI ZJ
BUCZKOWSKI A
ZHOU TQ
DUBE C
ROZGONYI GA
Citation: Zj. Radzimski et al., ELECTRON-BEAM-INDUCED CURRENT STUDIES OF DEFECT-INDUCED CONDUCTIVITY INVERSION, Scanning microscopy, 7(2), 1993, pp. 513-521
Authors:
ZHOU TQ
BUCZKOWSKI A
RADZIMSKI ZJ
ROZGONYI GA
Citation: Tq. Zhou et al., ENHANCED SURFACE-INTERFACE RECOMBINATION AND SURFACE INVERSION OF NI DECORATED SI SI(GE)/SI HETEROSTRUCTURES/, Journal of applied physics, 73(12), 1993, pp. 8412-8418
Authors:
CHEN ZH
BLEISS R
MANDELIS A
BUCZKOWSKI A
SHIMURA F
Citation: Zh. Chen et al., PHOTOTHERMAL RATE-WINDOW SPECTROMETRY FOR NONCONTACT BULK LIFETIME MEASUREMENTS IN SEMICONDUCTORS, Journal of applied physics, 73(10), 1993, pp. 5043-5048
Authors:
BUCZKOWSKI A
ROZGONYI G
SHIMURA F
MISHRA K
Citation: A. Buczkowski et al., PHOTOCONDUCTANCE MINORITY-CARRIER LIFETIME VS SURFACE PHOTOVOLTAGE DIFFUSION LENGTH IN SILICON, Journal of the Electrochemical Society, 140(11), 1993, pp. 3240-3245
Authors:
IKEDA N
BUCZKOWSKI A
SHIMURA F
Citation: N. Ikeda et al., NONCONTACT CHARACTERIZATION FOR GROWN-IN DEFECTS IN CZOCHRALSKI SILICON-WAFERS WITH A LASER MICROWAVE PHOTOCONDUCTANCE METHOD, Applied physics letters, 63(21), 1993, pp. 2914-2916
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