ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-24 |

Results: 24

Ion beam studies of silicon oxidation and oxynitridation

Authors: Schulte, WH Gustafsson, T Garfunkel, E Baumvol, IJR Gusev, EP

Citation: Wh. Schulte et al., Ion beam studies of silicon oxidation and oxynitridation, SPR S MAT S, 46, 2001, pp. 161-191

Low energy nitrogen implantation into Si and SiO2/Si

Authors: Krug, C Salgado, TDM Stedile, FC Baumvol, IJR

Citation: C. Krug et al., Low energy nitrogen implantation into Si and SiO2/Si, NUCL INST B, 175, 2001, pp. 694-698

Isotope-beam modification of materials at eV energies

Authors: Krug, C Radtke, C Stedile, FC Baumvol, IJR

Citation: C. Krug et al., Isotope-beam modification of materials at eV energies, NUCL INST B, 175, 2001, pp. 705-710

Ion beams as analytical tools in the thermal growth of ultrathin silicon oxide films

Authors: da Rosa, EBO Goncalves, S de Almeida, RMC Baumvol, IJR Stedile, FC

Citation: Ebo. Da Rosa et al., Ion beams as analytical tools in the thermal growth of ultrathin silicon oxide films, NUCL INST B, 175, 2001, pp. 762-766

Comment on "Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si" - Reply

Authors: Krug, C da Rosa, EBO de Almeida, RMC Morais, J Baumvol, IJR Salgado, TDM Stedile, FC

Citation: C. Krug et al., Comment on "Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si" - Reply, PHYS REV L, 86(20), 2001, pp. 4714-4714

Annealing of ZrAlxOy ultrathin films on Si in a vacuum or in O-2

Authors: da Rosa, EBO Morais, J Pezzi, RP Miotti, L Baumvol, IJR

Citation: Ebo. Da Rosa et al., Annealing of ZrAlxOy ultrathin films on Si in a vacuum or in O-2, J ELCHEM SO, 148(12), 2001, pp. G695-G703

Thermal stability and diffusion in gadolinium silicate gate dielectric films

Authors: Landheer, D Wu, X Morais, J Baumvol, IJR Pezzi, RP Miotti, L Lennard, WN Kim, JK

Citation: D. Landheer et al., Thermal stability and diffusion in gadolinium silicate gate dielectric films, APPL PHYS L, 79(16), 2001, pp. 2618-2620

Composition, atomic transport, and chemical stability of ZrAlxOy ultrathinfilms deposited on Si(001)

Authors: Morais, J da Rosa, EBO Pezzi, RP Miotti, L Baumvol, IJR

Citation: J. Morais et al., Composition, atomic transport, and chemical stability of ZrAlxOy ultrathinfilms deposited on Si(001), APPL PHYS L, 79(13), 2001, pp. 1998-2000

Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies

Authors: Radtke, C Baumvol, IJR Morais, J Stedile, FC

Citation: C. Radtke et al., Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies, APPL PHYS L, 78(23), 2001, pp. 3601-3603

Stability of zirconium silicate films on Si under vacuum and O-2 annealing

Authors: Morais, J da Rosa, EBO Miotti, L Pezzi, RP Baumvol, IJR Rotondaro, ALP Bevan, MJ Colombo, L

Citation: J. Morais et al., Stability of zirconium silicate films on Si under vacuum and O-2 annealing, APPL PHYS L, 78(17), 2001, pp. 2446-2448

Reaction-diffusion model for thermal growth of silicon nitride films on Si

Authors: de Almeida, RMC Baumvol, IJR

Citation: Rmc. De Almeida et Ijr. Baumvol, Reaction-diffusion model for thermal growth of silicon nitride films on Si, PHYS REV B, 62(24), 2000, pp. R16255-R16258

Dynamics of thermal growth of silicon oxide films on Si

Authors: de Almeida, RMC Goncalves, S Baumvol, IJR Stedile, FC

Citation: Rmc. De Almeida et al., Dynamics of thermal growth of silicon oxide films on Si, PHYS REV B, 61(19), 2000, pp. 12992-12999

Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si

Authors: Krug, C da Rosa, EBO de Almeida, RMC Morais, J Baumvol, IJR Salgado, TDM Stedile, FC

Citation: C. Krug et al., Atomic transport and chemical stability during annealing of ultrathin Al2O3 films on Si, PHYS REV L, 85(19), 2000, pp. 4120-4123

Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

Authors: McDonald, K Huang, MB Weller, RA Feldman, LC Williams, JR Stedile, FC Baumvol, IJR Radtke, C

Citation: K. Mcdonald et al., Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures, APPL PHYS L, 76(5), 2000, pp. 568-570

High-resolution depth profiling in ultrathin Al2O3 films on Si

Authors: Gusev, EP Copel, M Cartier, E Baumvol, IJR Krug, C Gribelyuk, MA

Citation: Ep. Gusev et al., High-resolution depth profiling in ultrathin Al2O3 films on Si, APPL PHYS L, 76(2), 2000, pp. 176-178

Interconnected UHV facilities for materials preparation and analysis

Authors: Kubsky, S Borucki, L Gorris, F Becker, HW Rolfs, C Schulte, WH Baumvol, IJR Stedile, FC

Citation: S. Kubsky et al., Interconnected UHV facilities for materials preparation and analysis, NUCL INST A, 435(3), 1999, pp. 514-522

Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation

Authors: Salgado, TDM Stedile, FC Krug, C Baumvol, IJR Radtke, C

Citation: Tdm. Salgado et al., Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation, NUCL INST B, 148(1-4), 1999, pp. 252-256

Atomic transport during growth of ultrathin dielectrics on silicon

Authors: Baumvol, IJR

Citation: Ijr. Baumvol, Atomic transport during growth of ultrathin dielectrics on silicon, SURF SCI R, 36(1-8), 1999, pp. 5-166

Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) in O-2

Authors: Baumvol, IJR Krug, C Stedile, FC Gorris, F Schulte, WH

Citation: Ijr. Baumvol et al., Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) in O-2, PHYS REV B, 60(3), 1999, pp. 1492-1495

Production of thin epitaxial films using ion beam deposition

Authors: Gorris, F Krug, C Kubsky, S Baumvol, IJR Schulte, WH Rolfs, C

Citation: F. Gorris et al., Production of thin epitaxial films using ion beam deposition, PHYS ST S-A, 173(1), 1999, pp. 167-173

Effects of the final oxidation step on N and O distributions in silicon oxide/nitride/oxide ultrathin films

Authors: Salgado, TDM Radtke, C Krug, C de Andrade, J Baumvol, IJR

Citation: Tdm. Salgado et al., Effects of the final oxidation step on N and O distributions in silicon oxide/nitride/oxide ultrathin films, J ELCHEM SO, 146(10), 1999, pp. 3788-3793

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

Authors: Klein, TM Niu, D Epling, WS Li, W Maher, DM Hobbs, CC Hegde, RI Baumvol, IJR Parsons, GN

Citation: Tm. Klein et al., Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100), APPL PHYS L, 75(25), 1999, pp. 4001-4003

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

Authors: Baumvol, IJR Krug, C Stedile, FC Green, ML Jacobson, DC Eaglesham, D Bernstein, JD Shao, J Denholm, AS Kellerman, PL

Citation: Ijr. Baumvol et al., Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation, APPL PHYS L, 74(6), 1999, pp. 806-808

Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon

Authors: Baumvol, IJR Salgado, TDM Stedile, FC Radtke, C Krug, C

Citation: Ijr. Baumvol et al., Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon, APPL PHYS L, 74(13), 1999, pp. 1872-1874

Risultati: 1-24 |