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Results: 1-19 |
Results: 19
InGaAs nanodomains formed in situ on the surface of (Al,Ga)As
Authors: Krestnikov, IL Cherkashin, NA Sizov, DS Bedarev, DA Kochnev, IV Lantratov, VM Ledentsov, NN
Citation: Il. Krestnikov et al., InGaAs nanodomains formed in situ on the surface of (Al,Ga)As, TECH PHYS L, 27(3), 2001, pp. 233-235
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range
Authors: Maleev, NA Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Bedarev, DA Volovik, BV Krestnikov, IL Kayander, IN Odnoblyudov, VA Suvorova, AA Tsatsul'nikov, AF Shernyakov, YM Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Na. Maleev et al., Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 mu m wavelength range, SEMICONDUCT, 34(5), 2000, pp. 594-597
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
Authors: Tsatsul'nikov, AF Volovik, BV Bedarev, DA Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Af. Tsatsul'Nikov et al., Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots, SEMICONDUCT, 34(3), 2000, pp. 323-326
Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands
Authors: Sobolev, MM Kochnev, IV Lantratov, VM Bert, NA Cherkashin, NA Ledentsov, NN Bedarev, DA
Citation: Mm. Sobolev et al., Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands, SEMICONDUCT, 34(2), 2000, pp. 195-204
0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Soshnikov, IP Livshits, DA Tarasov, IS Bedarev, DA Volovik, BV Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., 0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, SEMIC SCI T, 15(11), 2000, pp. 1061-1064
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Shernyakov, YM Kaiander, IN Kondrat'eva, EY Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Musikhin, YG Kop'ev, PS Alferov, ZI Heitz, R Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m, MICROEL ENG, 51-2, 2000, pp. 61-72
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Kop'ev, PS Alferov, ZI Vorob'ev, LE Firsov, DA Suvorova, AA Soshnikov, IP Werner, P Ledentsov, NN Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates, MICROELEC J, 31(1), 2000, pp. 1-7
Photoinduced self-organization of gallium nanowires on a GaN surface
Authors: Bedarev, DA Kognovitskii, SO Lundin, VV
Citation: Da. Bedarev et al., Photoinduced self-organization of gallium nanowires on a GaN surface, TECH PHYS L, 25(5), 1999, pp. 385-387
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
Authors: Tsatsul'nikov, AF Bedarev, DA Volovik, BV Ivanov, SV Maksimov, MV Musikhin, YG Ledentsov, NN Mel'tser, BY Solov'ev, VA Kop'ev, PS Chernyshov, AY Belousov, MV
Citation: Af. Tsatsul'Nikov et al., Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface, SEMICONDUCT, 33(8), 1999, pp. 886-888
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Authors: Volovik, BV Tsatsul'nikov, AF Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Suvorova, AA Ustinov, VM Kop'ev, PS Alferov, ZI Bimberg, D Werner, P
Citation: Bv. Volovik et al., Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands, SEMICONDUCT, 33(8), 1999, pp. 901-905
Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures
Authors: Kovsh, AR Zhukov, AE Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maksimov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kondrat'eva, EY Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., Lasing at a wavelength close to 1.3 mu m in InAs quantum-dot structures, SEMICONDUCT, 33(8), 1999, pp. 929-932
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
Authors: Zhen, Z Bedarev, DA Volovik, BV Ledentsov, NN Lunev, AV Maksimov, MV Tsatsul'nikov, AF Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Kop'ev, PS
Citation: Z. Zhen et al., Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix, SEMICONDUCT, 33(1), 1999, pp. 80-84
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Shernyakov, YM Mikhrin, SS Maleev, NA Kondrat'eva, EY Livshits, DA Maximov, MV Volovik, BV Bedarev, DA Musikhin, YG Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate, IEEE PHOTON, 11(11), 1999, pp. 1345-1347
Single transverse mode operation of long wavelength (similar to 1.3 mu m) InAsGaAs quantum dot laser
Authors: Maximov, MV Shernyakov, YM Kaiander, IN Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZJ Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Single transverse mode operation of long wavelength (similar to 1.3 mu m) InAsGaAs quantum dot laser, ELECTR LETT, 35(23), 1999, pp. 2038-2039
3.9W CW power from sub-monolayer quantum dot diode laser
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Ustinov, VM Livshits, DA Tarasov, IS Bedarev, DA Maximov, MV Tsatsul'nikov, AF Soshnikov, IP Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., 3.9W CW power from sub-monolayer quantum dot diode laser, ELECTR LETT, 35(21), 1999, pp. 1845-1847
1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Authors: Shernyakov, YM Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Maximov, MV Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ym. Shernyakov et al., 1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition, ELECTR LETT, 35(11), 1999, pp. 898-900
Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Bert, NA Ustinov, VM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D Soshnikov, IP Werner, P
Citation: Mv. Maximov et al., Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m, APPL PHYS L, 75(16), 1999, pp. 2347-2349
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
Authors: Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Shernyakov, YM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates, APPL PHYS L, 75(13), 1999, pp. 1926-1928
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
Authors: Egorov, AY Zhukov, AE Kovsh, AR Ustinov, VM Mamutin, VV Ivanov, SV Zhmerik, VN Tsatsul'nikov, AF Bedarev, DA Kop'ev, PS
Citation: Ay. Egorov et al., GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy, TECH PHYS L, 24(12), 1998, pp. 942-944
Risultati: 1-19 |