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Results: 1-25 | 26-34
Results: 1-25/34
Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability
Authors: Nosho, BZ Bennett, BR Whitman, LJ Goldenberg, M
Citation: Bz. Nosho et al., Effects of As-2 versus As-4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability, J VAC SCI B, 19(4), 2001, pp. 1626-1630
Electrical spin injection in GaAs/AlGaAs quantum-well LEDs
Authors: Cheong, HD Jeong, YH Kioseoglou, G Petrou, A Park, YD Bennett, BR Jonker, BT
Citation: Hd. Cheong et al., Electrical spin injection in GaAs/AlGaAs quantum-well LEDs, J KOR PHYS, 39(3), 2001, pp. 568-571
Initial stages of Sb-2 deposition on InAs(001)
Authors: Nosho, BZ Shanabrook, BV Bennett, BR Barvosa-Carter, W Weinberg, WH Whitman, LJ
Citation: Bz. Nosho et al., Initial stages of Sb-2 deposition on InAs(001), SURF SCI, 478(1-2), 2001, pp. 1-8
Barrier roughness effects in resonant interband tunnel diodes
Authors: Magno, R Bracker, AS Bennett, BR Nosho, BZ Whitman, LJ
Citation: R. Magno et al., Barrier roughness effects in resonant interband tunnel diodes, J APPL PHYS, 90(12), 2001, pp. 6177-6181
Resonant interband tunnel diodes with AlGaSb barriers
Authors: Magno, R Bracker, AS Bennett, BR
Citation: R. Magno et al., Resonant interband tunnel diodes with AlGaSb barriers, J APPL PHYS, 89(10), 2001, pp. 5791-5793
Stoichiometry-induced roughness on antimonide growth surfaces
Authors: Bracker, AS Nosho, BZ Barvosa-Carter, W Whitman, LJ Bennett, BR Shanabrook, BV Culbertson, JC
Citation: As. Bracker et al., Stoichiometry-induced roughness on antimonide growth surfaces, APPL PHYS L, 78(17), 2001, pp. 2440-2442
Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes
Authors: Magno, R Weaver, BD Bracker, AS Bennett, BR
Citation: R. Magno et al., Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes, APPL PHYS L, 78(17), 2001, pp. 2581-2583
Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system
Authors: Bennett, BR Bracker, AS Magno, R Boos, JB Bass, R Park, D
Citation: Br. Bennett et al., Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system, J VAC SCI B, 18(3), 2000, pp. 1650-1652
Robust electrical spin injection into a semiconductor heterostructure
Authors: Jonker, BT Park, YD Bennett, BR Cheong, HD Kioseoglou, G Petrou, A
Citation: Bt. Jonker et al., Robust electrical spin injection into a semiconductor heterostructure, PHYS REV B, 62(12), 2000, pp. 8180-8183
Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures
Authors: Nosho, BZ Barvosa-Carter, W Yang, MJ Bennett, BR Whitman, LJ
Citation: Bz. Nosho et al., Interpreting interfacial structure in cross-sectional STM images of III-V semiconductor heterostructures, SURF SCI, 465(3), 2000, pp. 361-371
Magnetoelectronic latching Boolean gate
Authors: Johnson, M Bennett, BR Hammar, PR Miller, MM
Citation: M. Johnson et al., Magnetoelectronic latching Boolean gate, SOL ST ELEC, 44(6), 2000, pp. 1099-1104
Comment on "Observation of spin injection at a ferromagnet-semiconductor interface" - Hammar et al. reply
Authors: Hammar, PR Bennett, BR Yang, MJ Johnson, M
Citation: Pr. Hammar et al., Comment on "Observation of spin injection at a ferromagnet-semiconductor interface" - Hammar et al. reply, PHYS REV L, 84(21), 2000, pp. 5024-5025
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb
Authors: Bracker, AS Yang, MJ Bennett, BR Culbertson, JC Moore, WJ
Citation: As. Bracker et al., Surface reconstruction phase diagrams for InAs, AlSb, and GaSb, J CRYST GR, 220(4), 2000, pp. 384-392
Deep level transient capacitance measurements of GaSb self-assembled quantum dots
Authors: Magno, R Bennett, BR Glaser, ER
Citation: R. Magno et al., Deep level transient capacitance measurements of GaSb self-assembled quantum dots, J APPL PHYS, 88(10), 2000, pp. 5843-5849
Observation of spin polarized transport across a ferromagnet-two-dimensional electron gas interface (invited)
Authors: Hammar, PR Bennett, BR Yang, MJ Johnson, M
Citation: Pr. Hammar et al., Observation of spin polarized transport across a ferromagnet-two-dimensional electron gas interface (invited), J APPL PHYS, 87(9), 2000, pp. 4665-4669
Transport properties of Be- and Si-doped AlSb
Authors: Bennett, BR Moore, WJ Yang, MJ Shanabrook, BV
Citation: Br. Bennett et al., Transport properties of Be- and Si-doped AlSb, J APPL PHYS, 87(11), 2000, pp. 7876-7879
Photoluminescence of InAs1-xSbx/AlSb single quantum wells: Transition fromtype-II to type-I band alignment
Authors: Yang, MJ Bennett, BR Fatemi, M Lin-Chung, PJ Moore, WJ Yang, CH
Citation: Mj. Yang et al., Photoluminescence of InAs1-xSbx/AlSb single quantum wells: Transition fromtype-II to type-I band alignment, J APPL PHYS, 87(11), 2000, pp. 8192-8194
Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)
Authors: McMorrow, D Boos, JB Knudson, AR Buchner, S Yang, MJ Bennett, BR Melinger, JS
Citation: D. Mcmorrow et al., Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs), IEEE NUCL S, 47(6), 2000, pp. 2662-2668
Low-frequency noise in AlSb/InAs HEMTs
Authors: Kruppa, W Boos, JB Bennett, BR Yang, MJ
Citation: W. Kruppa et al., Low-frequency noise in AlSb/InAs HEMTs, ELECTR LETT, 36(22), 2000, pp. 1888-1889
Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces
Authors: Park, YD Jonker, BT Bennett, BR Itskos, G Furis, M Kioseoglou, G Petrou, A
Citation: Yd. Park et al., Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces, APPL PHYS L, 77(24), 2000, pp. 3989-3991
Characterization of AlSb/InAs surfaces and resonant tunneling devices
Authors: Nosho, BZ Weinberg, WH Barvosa-Carter, W Bracker, AS Magno, R Bennett, BR Culbertson, JC Shanabrook, BV Whitman, LJ
Citation: Bz. Nosho et al., Characterization of AlSb/InAs surfaces and resonant tunneling devices, J VAC SCI B, 17(4), 1999, pp. 1786-1790
Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation
Authors: Boos, JB Bennett, BR Kruppa, W Park, D Mittereder, J Bass, R Twigg, ME
Citation: Jb. Boos et al., Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation, J VAC SCI B, 17(3), 1999, pp. 1022-1027
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes
Authors: Glaser, ER Kennedy, TA Bennett, BR Shanabrook, BV Hemstreet, LA Bayerl, MW Brandt, MS
Citation: Er. Glaser et al., Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes, PHYSICA B, 274, 1999, pp. 811-814
Magnetocapacitance and far-infrared photoconductivity in GaSb/InAs composite quantum wells
Authors: Yang, MJ Yang, CH Bennett, BR
Citation: Mj. Yang et al., Magnetocapacitance and far-infrared photoconductivity in GaSb/InAs composite quantum wells, PHYS REV B, 60(20), 1999, pp. R13958-R13961
Strong emission from As monolayers in AlSb
Authors: Glaser, ER Kennedy, TA Bennett, BR Shanabrook, BV
Citation: Er. Glaser et al., Strong emission from As monolayers in AlSb, PHYS REV B, 59(3), 1999, pp. 2240-2244
Risultati: 1-25 | 26-34