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Results: 1-18 |
Results: 18
Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications
Authors: Starikov, D Boney, C Berishev, I Hernandez, IC Bensaoula, A
Citation: D. Starikov et al., Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications, J VAC SCI B, 19(4), 2001, pp. 1404-1408
Visible emission from AlN doped with Eu and Tb ions
Authors: Jadwisienczak, WM Lozykowski, HJ Berishev, I Bensaoula, A Brown, IG
Citation: Wm. Jadwisienczak et al., Visible emission from AlN doped with Eu and Tb ions, J APPL PHYS, 89(8), 2001, pp. 4384-4390
Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum
Authors: Starikov, D Berishev, I Um, JW Badi, N Medelci, N Tempez, A Bensaoula, A
Citation: D. Starikov et al., Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum, J VAC SCI B, 18(6), 2000, pp. 2620-2623
Selective area growth of GaN on Si(111) by chemical beam epitaxy
Authors: Kim, E Tempez, A Medelci, N Berishev, I Bensaoula, A
Citation: E. Kim et al., Selective area growth of GaN on Si(111) by chemical beam epitaxy, J VAC SCI A, 18(4), 2000, pp. 1130-1134
Etch characteristics of GaN and BN materials in chlorine-based plasmas
Authors: Medelci, N Tempez, A Starikov, D Badi, N Berishev, I Bensaoula, A
Citation: N. Medelci et al., Etch characteristics of GaN and BN materials in chlorine-based plasmas, J ELEC MAT, 29(9), 2000, pp. 1079-1083
Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1
Authors: Bensaoula, AH Rusakova, I Bensaoula, A
Citation: Ah. Bensaoula et al., Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1, MICROELEC J, 31(5), 2000, pp. 311-322
Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2
Authors: Rusakova, IA Bensaoula, AH Fartassi, A Bensaoula, A
Citation: Ia. Rusakova et al., Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2, MICROELEC J, 31(5), 2000, pp. 323-331
X-ray induced modification of electronic properties of boron nitride thin films
Authors: Ageev, V Ugarov, M Frolov, V Karabutov, A Loubnin, E Badi, N Bensaoula, A
Citation: V. Ageev et al., X-ray induced modification of electronic properties of boron nitride thin films, J APPL PHYS, 88(12), 2000, pp. 7197-7200
Laser-induced modification of carbon nitride thin films
Authors: Badi, N Bensaoula, A Ageev, V Karabutov, A Ugarov, M Loubnin, E
Citation: N. Badi et al., Laser-induced modification of carbon nitride thin films, J APPL PHYS, 88(12), 2000, pp. 7351-7353
In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions
Authors: Kim, E Berishev, I Bensaoula, A Schultz, JA
Citation: E. Kim et al., In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions, J VAC SCI B, 17(3), 1999, pp. 1209-1213
Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin Films
Authors: Berishev, I Kim, E Fartassi, A Sayhi, M Bensaoula, A
Citation: I. Berishev et al., Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin Films, J VAC SCI A, 17(4), 1999, pp. 2166-2169
Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas
Authors: Tempez, A Medelci, N Badi, N Berishev, I Starikov, D Bensaoula, A
Citation: A. Tempez et al., Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas, J VAC SCI A, 17(4), 1999, pp. 2209-2213
Field emission from as-grown and surface modified BN and CN thin films
Authors: Badi, N Tempez, A Starikov, D Bensaoula, A Ageev, VP Karabutov, A Ugarov, MV Frolov, V Loubnin, E Waters, K Shultz, A
Citation: N. Badi et al., Field emission from as-grown and surface modified BN and CN thin films, J VAC SCI A, 17(4), 1999, pp. 1191-1195
Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications
Authors: Starikov, D Badi, N Berishev, I Medelci, N Kameli, O Sayhi, M Zomorrodian, V Bensaoula, A
Citation: D. Starikov et al., Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications, J VAC SCI A, 17(4), 1999, pp. 1235-1238
UV laser induced interfacial synthesis of CN-BCN layers on diamond films in borazine and ammonia
Authors: Ugarov, MV Ageev, VP Karabutov, AV Loubnin, EN Pimenov, SM Konov, VI Bensaoula, A
Citation: Mv. Ugarov et al., UV laser induced interfacial synthesis of CN-BCN layers on diamond films in borazine and ammonia, APPL SURF S, 139, 1999, pp. 359-363
Enhanced free carrier generation in boron nitride films by pulsed laser radiation
Authors: Ageev, V Klimentov, S Ugarov, M Loubnin, E Bensaoula, A Badi, N Tempez, A Starikov, D
Citation: V. Ageev et al., Enhanced free carrier generation in boron nitride films by pulsed laser radiation, APPL SURF S, 139, 1999, pp. 364-369
Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN
Authors: Kim, E Berishev, I Bensaoula, A Rusakova, I Waters, K Schultz, JA
Citation: E. Kim et al., Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN, J APPL PHYS, 85(2), 1999, pp. 1178-1185
Laser-induced modification of electron field emission from nanocrystallinediamond films
Authors: Ugarov, MV Ageev, VP Karabutov, AV Loubnin, EN Pimenov, SM Konov, VI Bensaoula, A
Citation: Mv. Ugarov et al., Laser-induced modification of electron field emission from nanocrystallinediamond films, J APPL PHYS, 85(12), 1999, pp. 8436-8440
Risultati: 1-18 |