AAAAAA

   
Results: 1-20 |
Results: 20
Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs
Authors: Chaldyshev, VV Bert, NA Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P Gosele, U
Citation: Vv. Chaldyshev et al., Enhanced As-Sb intermixing of GaSb monolayer superlattices in low-temperature grown GaAs, APPL PHYS L, 79(9), 2001, pp. 1294-1296
Sputtering of A(3)B(5) materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N-2(+) ions
Authors: Soshnikov, IP Bert, NA
Citation: Ip. Soshnikov et Na. Bert, Sputtering of A(3)B(5) materials (GaP, GaAs, GaSb, InP, and InSb) by 2-to 14-keV N-2(+) ions, TECH PHYS, 45(9), 2000, pp. 1201-1206
Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters
Authors: Brunkov, PN Chaldyshev, VV Chernigovskii, AV Suvorova, AA Bert, NA Konnikov, SG Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Pn. Brunkov et al., Accumulation of majority charge carriers in GaAs layers containing arsenicnanoclusters, SEMICONDUCT, 34(9), 2000, pp. 1068-1072
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
Authors: Cherkashin, NA Bert, NA Musikhin, YG Novikov, SV Cheng, TS Foxon, CT
Citation: Na. Cherkashin et al., TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate, SEMICONDUCT, 34(8), 2000, pp. 867-871
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
Authors: Tsatsul'nikov, AF Volovik, BV Bedarev, DA Zhukov, AE Kovsh, AR Ledentsov, NN Maksimov, MV Maleev, NA Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Af. Tsatsul'Nikov et al., Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots, SEMICONDUCT, 34(3), 2000, pp. 323-326
Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands
Authors: Sobolev, MM Kochnev, IV Lantratov, VM Bert, NA Cherkashin, NA Ledentsov, NN Bedarev, DA
Citation: Mm. Sobolev et al., Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands, SEMICONDUCT, 34(2), 2000, pp. 195-204
Sputtering of vanadium, molybdenum, and tantalum silicides by low energy Ar+ ions
Authors: Soshnikov, IP Murashov, S Shakhmin, AL Khodorkovsky, MA Bert, NA
Citation: Ip. Soshnikov et al., Sputtering of vanadium, molybdenum, and tantalum silicides by low energy Ar+ ions, IAN FIZ, 64(4), 2000, pp. 741-742
Writing your first play
Authors: Bert, NA
Citation: Na. Bert, Writing your first play, THEAT J, 52(3), 2000, pp. 440-441
Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 mu m
Authors: Tsatsul'nikov, AF Kovsh, AR Zhukov, AE Shernyakov, YM Musikhin, YG Ustinov, VM Bert, NA Kop'ev, PS Alferov, ZI Mintairov, AM Merz, JL Ledentsov, NN Bimberg, D
Citation: Af. Tsatsul'Nikov et al., Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 mu m, J APPL PHYS, 88(11), 2000, pp. 6272-6275
Spontaneously assembling periodic composition-modulated InGaAsP structures
Authors: Vavilova, LS Kapitonov, VA Murashova, AV Pikhtin, NA Tarasov, IS Ipatova, IP Shchukin, VA Bert, NA Sitnikova, AA
Citation: Ls. Vavilova et al., Spontaneously assembling periodic composition-modulated InGaAsP structures, SEMICONDUCT, 33(9), 1999, pp. 1010-1012
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
Authors: Vilisova, MD Ivonin, IV Lavrentieva, LG Subach, SV Yakubenya, MP Preobrazhenskii, VV Putyato, MA Semyagin, BR Bert, NA Musikhin, YG Chaldyshev, VV
Citation: Md. Vilisova et al., Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy, SEMICONDUCT, 33(8), 1999, pp. 824-829
Spontaneously forming periodic composition-modulated InGaAsP structures
Authors: Bert, NA Vavilova, LS Ipatova, IP Kapitonov, VA Murashova, AV Pikhtin, NA Sitnikova, AA Tarasov, IS Shchukin, VA
Citation: Na. Bert et al., Spontaneously forming periodic composition-modulated InGaAsP structures, SEMICONDUCT, 33(5), 1999, pp. 510-513
Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates
Authors: Zhukov, AE Kovsh, AR Egorov, AY Maleev, NA Ustinov, VM Volovik, BV Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Shernyakov, YM Lunev, AV Musikhin, YG Bert, NA Kop'ev, PS Alferov, ZI
Citation: Ae. Zhukov et al., Photo- and electroluminescence in the 1.3-mu m wavelength range from quantum-dot structures grown on GaAs substrates, SEMICONDUCT, 33(2), 1999, pp. 153-156
Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status
Authors: Zhukov, AE Ustinov, VM Kovsh, AR Egorov, AY Maleev, NA Ledentsov, NN Tsatsul'nikov, AF Maximov, MV Musikhin, YG Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ae. Zhukov et al., Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status, SEMIC SCI T, 14(6), 1999, pp. 575-581
Near-threshold sputtering of MoSi2
Authors: Soshnikov, IP Stepanova, MG Matin, EN Shakhmin, AL Khodorkovsky, MA Bert, NA
Citation: Ip. Soshnikov et al., Near-threshold sputtering of MoSi2, NUCL INST B, 155(3), 1999, pp. 272-279
Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE
Authors: Chaldyshev, VV Faleev, NN Bert, NA Musikhin, YG Kunitsyn, AE Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Vv. Chaldyshev et al., Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE, J CRYST GR, 202, 1999, pp. 260-262
Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Egorov, AY Zhukov, AE Kovsh, AR Bert, NA Ustinov, VM Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D Soshnikov, IP Werner, P
Citation: Mv. Maximov et al., Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mu m, APPL PHYS L, 75(16), 1999, pp. 2347-2349
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 mu m
Authors: Ustinov, VM Maleev, NA Zhukov, AE Kovsh, AR Egorov, AY Lunev, AV Volovik, BV Krestnikov, IL Musikhin, YG Bert, NA Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Vm. Ustinov et al., InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 mu m, APPL PHYS L, 74(19), 1999, pp. 2815-2817
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
Authors: Bert, NA Chaldyshev, VV Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Na. Bert et al., Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs, APPL PHYS L, 74(11), 1999, pp. 1588-1590
In-Ga intermixing in low-temperature grown GaAs delta doped with In
Authors: Bert, NA Chaldyshev, VV Musikhin, YG Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR Werner, P
Citation: Na. Bert et al., In-Ga intermixing in low-temperature grown GaAs delta doped with In, APPL PHYS L, 74(10), 1999, pp. 1442-1444
Risultati: 1-20 |