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Results: 1-25 | 26-30
Results: 1-25/30
Sub-60-nm quasi-planar FinFETs fabricated using a simplified process
Authors: Lindert, N Chang, LL Choi, YK Anderson, EH Lee, WC King, TJ Bokor, J Hu, CM
Citation: N. Lindert et al., Sub-60-nm quasi-planar FinFETs fabricated using a simplified process, IEEE ELEC D, 22(10), 2001, pp. 487-489
Sub-50 nm p-channel FinFET
Authors: Huang, XJ Lee, WC Kuo, C Hisamoto, D Chang, LL Kedzierski, J Anderson, E Takeuchi, H Choi, YK Asano, K Subramanian, V King, TJ Bokor, J Hu, CM
Citation: Xj. Huang et al., Sub-50 nm p-channel FinFET, IEEE DEVICE, 48(5), 2001, pp. 880-886
Fourier-transform method of phase-shift determination
Authors: Goldberg, KA Bokor, J
Citation: Ka. Goldberg et J. Bokor, Fourier-transform method of phase-shift determination, APPL OPTICS, 40(17), 2001, pp. 2886-2894
Extreme-ultraviolet lensless Fourier-transform holography
Authors: Lee, SH Naulleau, P Goldberg, KA Cho, CH Jeong, S Bokor, J
Citation: Sh. Lee et al., Extreme-ultraviolet lensless Fourier-transform holography, APPL OPTICS, 40(16), 2001, pp. 2655-2661
Hamiltonian view on process systems
Authors: Hangos, KM Bokor, J Szederkenyi, G
Citation: Km. Hangos et al., Hamiltonian view on process systems, AICHE J, 47(8), 2001, pp. 1819-1831
Extreme ultraviolet alignment and testing of a four-mirror ring field extreme ultraviolet optical system
Authors: Goldberg, KA Naulleau, P Batson, P Denham, P Anderson, EH Chapman, H Bokor, J
Citation: Ka. Goldberg et al., Extreme ultraviolet alignment and testing of a four-mirror ring field extreme ultraviolet optical system, J VAC SCI B, 18(6), 2000, pp. 2911-2915
Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns
Authors: Yi, M Jeong, S Rekawa, S Bokor, J
Citation: M. Yi et al., Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns, J VAC SCI B, 18(6), 2000, pp. 2930-2934
Extreme ultraviolet holographic microscopy and its application to extreme ultraviolet mask-blank defect characterization
Authors: Lee, SH Bokor, J Naulleau, P Jeong, ST Goldberg, KA
Citation: Sh. Lee et al., Extreme ultraviolet holographic microscopy and its application to extreme ultraviolet mask-blank defect characterization, J VAC SCI B, 18(6), 2000, pp. 2935-2938
Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system
Authors: Naulieau, PP Goldberg, KA Bokor, J
Citation: Pp. Naulieau et al., Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system, J VAC SCI B, 18(6), 2000, pp. 2939-2943
Calixarene G-line double resist process with 15 nm resolution aid large area exposure capability
Authors: Kedzierski, J Anderson, E Bokor, J
Citation: J. Kedzierski et al., Calixarene G-line double resist process with 15 nm resolution aid large area exposure capability, J VAC SCI B, 18(6), 2000, pp. 3428-3430
Transmission phase gratings for EUV interferometry
Authors: Naulleau, PP Cho, CH Gullikson, EM Bokor, J
Citation: Pp. Naulleau et al., Transmission phase gratings for EUV interferometry, J SYNCHROTR, 7, 2000, pp. 405-410
A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain
Authors: Kedzierski, J Xuan, PQ Subramanian, V Bokor, J King, TJ Hu, CM Anderson, E
Citation: J. Kedzierski et al., A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain, SUPERLATT M, 28(5-6), 2000, pp. 445-452
Ultrathin-body SOI MOSFET for deep-sub-tenth micron era
Authors: Choi, YK Asano, K Lindert, N Subramanian, V King, TJ Bokor, J Hu, CM
Citation: Yk. Choi et al., Ultrathin-body SOI MOSFET for deep-sub-tenth micron era, IEEE ELEC D, 21(5), 2000, pp. 254-255
Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel
Authors: Yeo, YC Subramanian, V Kedzierski, J King, TJ Bokor, J Hu, CM Xuan, PQ
Citation: Yc. Yeo et al., Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel, IEEE ELEC D, 21(4), 2000, pp. 161-163
FinFET - A self-aligned double-gate MOSFET scalable to 20 nm
Authors: Hisamoto, D Lee, WC Kedzierski, J Takeuchi, H Asano, K Kuo, C Anderson, E King, TJ Bokor, J Hu, CM
Citation: D. Hisamoto et al., FinFET - A self-aligned double-gate MOSFET scalable to 20 nm, IEEE DEVICE, 47(12), 2000, pp. 2320-2325
Extended Ho-Kalman algorithm for systems represented in generalized orthonormal bases
Authors: Szabo, Z Heuberger, PSC Bokor, J Van den Hof, PMJ
Citation: Z. Szabo et al., Extended Ho-Kalman algorithm for systems represented in generalized orthonormal bases, AUTOMATICA, 36(12), 2000, pp. 1809-1818
At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems
Authors: Naulleau, P Goldberg, KA Gullikson, EM Bokor, J
Citation: P. Naulleau et al., At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems, APPL OPTICS, 39(17), 2000, pp. 2941-2947
Extreme ultraviolet interferometric measurements of diffraction-limited optics
Authors: Goldberg, KA Naulleau, P Bokor, J
Citation: Ka. Goldberg et al., Extreme ultraviolet interferometric measurements of diffraction-limited optics, J VAC SCI B, 17(6), 1999, pp. 2982-2986
Interferometric at-wavelength flare characterization of extreme ultraviolet optical systems
Authors: Naulleau, P Goldberg, KA Gullikson, EM Bokor, J
Citation: P. Naulleau et al., Interferometric at-wavelength flare characterization of extreme ultraviolet optical systems, J VAC SCI B, 17(6), 1999, pp. 2987-2991
Actinic detection of sub-100 nm defects on extreme ultraviolet lithographymask blanks
Authors: Jeong, ST Johnson, L Rekawa, S Walton, CC Prisbrey, ST Tejnil, E Underwood, JH Bokor, J
Citation: St. Jeong et al., Actinic detection of sub-100 nm defects on extreme ultraviolet lithographymask blanks, J VAC SCI B, 17(6), 1999, pp. 3009-3013
Nondestructive picosecond-ultrasonic characterization of Mo/Si extreme ultraviolet multilayer reflection coatings
Authors: Pu, NW Bokor, J Jeong, ST Zhao, RA
Citation: Nw. Pu et al., Nondestructive picosecond-ultrasonic characterization of Mo/Si extreme ultraviolet multilayer reflection coatings, J VAC SCI B, 17(6), 1999, pp. 3014-3018
Novel method for silicon quantum wire transistor fabrication
Authors: Kedzierski, J Bokor, J Anderson, E
Citation: J. Kedzierski et al., Novel method for silicon quantum wire transistor fabrication, J VAC SCI B, 17(6), 1999, pp. 3244-3247
Ultrafast carrier dynamics near the Si(100)2x1 surface
Authors: Jeong, S Bokor, J
Citation: S. Jeong et J. Bokor, Ultrafast carrier dynamics near the Si(100)2x1 surface, PHYS REV B, 59(7), 1999, pp. 4943-4951
Vision system for avoidance of lane-departure
Authors: Palkovics, L Kovacs, G Gianone, L Bokor, J Szell, P Semsey, A
Citation: L. Palkovics et al., Vision system for avoidance of lane-departure, VEH SYST D, 33, 1999, pp. 282-292
Identification of rational approximate models in H-infinity using generalized orthonormal basis
Authors: Szabo, Z Bokor, J Schipp, F
Citation: Z. Szabo et al., Identification of rational approximate models in H-infinity using generalized orthonormal basis, IEEE AUTO C, 44(1), 1999, pp. 153-158
Risultati: 1-25 | 26-30