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Results: 1-25 | 26-26
Results: 1-25/26
Electronic properties of Ga(In)NAs alloys
Authors: Buyanova, IA Chen, WM Monemar, B
Citation: Ia. Buyanova et al., Electronic properties of Ga(In)NAs alloys, MRS I J N S, 6(2), 2001, pp. 1-19
Optical properties of GaNAs/GaAs structures
Authors: Buyanova, IA Chen, WM Pozina, G Hai, PN Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Optical properties of GaNAs/GaAs structures, MAT SCI E B, 82(1-3), 2001, pp. 143-147
Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance
Authors: Hai, PN Chen, WM Buyanova, IA Monemar, B Xin, HP Tu, CW
Citation: Pn. Hai et al., Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance, MAT SCI E B, 82(1-3), 2001, pp. 218-220
Signature of an intrinsic point defect in GaNxAs1-x - art. no. 033203
Authors: Thinh, NQ Buyanova, IA Hai, PN Chen, WM Xin, HP Tu, CW
Citation: Nq. Thinh et al., Signature of an intrinsic point defect in GaNxAs1-x - art. no. 033203, PHYS REV B, 6303(3), 2001, pp. 3203
Type I band alignment in the GaNxAs1-x/GaAs quantum wells - art. no. 033303
Authors: Buyanova, IA Pozina, G Hai, PN Chen, WM Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Type I band alignment in the GaNxAs1-x/GaAs quantum wells - art. no. 033303, PHYS REV B, 6303(3), 2001, pp. 3303
Formation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonance
Authors: Thinh, NQ Buyanova, IA Chen, WM Xin, HP Tu, CW
Citation: Nq. Thinh et al., Formation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonance, APPL PHYS L, 79(19), 2001, pp. 3089-3091
Structural properties of a GaNxP1-x alloy: Raman studies
Authors: Buyanova, IA Chen, WM Goldys, EM Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Structural properties of a GaNxP1-x alloy: Raman studies, APPL PHYS L, 78(25), 2001, pp. 3959-3961
Applications of defect engineering in InP-based structures
Authors: Chen, WM Buyanova, IA Tu, CW
Citation: Wm. Chen et al., Applications of defect engineering in InP-based structures, MAT SCI E B, 75(2-3), 2000, pp. 103-109
Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Chen, WM Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 166-169
Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures
Authors: Buyanova, IA Monemar, B Lindstrom, JL Hallberg, T Murin, LI Markevich, VP
Citation: Ia. Buyanova et al., Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures, MAT SCI E B, 72(2-3), 2000, pp. 146-149
Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN
Authors: Wagner, M Buyanova, IA Thinh, NQ Chen, WM Monemar, B Lindstrom, JL Amano, H Akasaki, I
Citation: M. Wagner et al., Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN, PHYS REV B, 62(24), 2000, pp. 16572-16577
Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study
Authors: Hai, PN Chen, WM Buyanova, IA Monemar, B Amano, H Akasaki, I
Citation: Pn. Hai et al., Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study, PHYS REV B, 62(16), 2000, pp. R10607-R10609
Optical characterization of wide bandgap semiconductors
Authors: Edwards, NV Bremser, MD Batchelor, AD Buyanova, IA Madsen, LD Yoo, SD Welhkamp, T Wilmers, K Cobet, C Esser, N Davis, RF Aspnes, DE Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Pozina, G Hai, PN Thinh, NQ Bergman, JP Chen, WM Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy, APPL PHYS L, 77(15), 2000, pp. 2325-2327
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
Authors: Hai, PN Chen, WM Buyanova, IA Xin, HP Tu, CW
Citation: Pn. Hai et al., Direct determination of electron effective mass in GaNAs/GaAs quantum wells, APPL PHYS L, 77(12), 2000, pp. 1843-1845
Effect of high-temperature electron irradiation on the formation of radiative defects in silicon
Authors: Buyanova, IA Hallberg, T Murin, LI Markevich, VP Monemar, B Lindstrom, JL
Citation: Ia. Buyanova et al., Effect of high-temperature electron irradiation on the formation of radiative defects in silicon, PHYSICA B, 274, 1999, pp. 528-531
Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Chen, WM Pozina, G Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Magnetooptical investigations on electron irradiated GaN
Authors: Wagner, M Buyanova, IA Chen, WM Monemar, B Lindstrom, JL Amano, H Akasaki, I
Citation: M. Wagner et al., Magnetooptical investigations on electron irradiated GaN, PHYS SCR, T79, 1999, pp. 53-55
Effect of electron irradiation on optical properties of gallium nitride
Authors: Buyanova, IA Wagner, M Chen, WM Monemar, B Lindstrom, JL Amano, H Aksaki, I
Citation: Ia. Buyanova et al., Effect of electron irradiation on optical properties of gallium nitride, PHYS SCR, T79, 1999, pp. 72-75
Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures
Authors: Chen, WM Buyanov, AV Buyanova, IA Lundstrom, T Bi, WG Zeng, YP Tu, CW
Citation: Wm. Chen et al., Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures, PHYS SCR, T79, 1999, pp. 103-105
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
Authors: Buyanova, IA Wagner, M Chen, WM Edwards, NV Monemar, B Lindstrom, JL Bremser, MD Davis, RF Amano, H Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Intrinsic modulation doping in InP-based structures: properties relevant to device applications
Authors: Buyanova, IA Chen, WM Bi, WG Zeng, YP Tu, CW
Citation: Ia. Buyanova et al., Intrinsic modulation doping in InP-based structures: properties relevant to device applications, J CRYST GR, 202, 1999, pp. 786-789
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
Authors: Buyanova, IA Chen, WM Pozina, G Bergman, JP Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy, APPL PHYS L, 75(4), 1999, pp. 501-503
Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
Authors: Buyanova, IA Chen, WM Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures, APPL PHYS L, 75(24), 1999, pp. 3781-3783
Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures
Authors: Buyanova, IA Chen, WM Bi, WG Zeng, YP Tu, CW
Citation: Ia. Buyanova et al., Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures, APPL PHYS L, 75(12), 1999, pp. 1733-1735
Risultati: 1-25 | 26-26