Authors:
Hai, PN
Chen, WM
Buyanova, IA
Monemar, B
Xin, HP
Tu, CW
Citation: Pn. Hai et al., Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance, MAT SCI E B, 82(1-3), 2001, pp. 218-220
Authors:
Thinh, NQ
Buyanova, IA
Chen, WM
Xin, HP
Tu, CW
Citation: Nq. Thinh et al., Formation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonance, APPL PHYS L, 79(19), 2001, pp. 3089-3091
Authors:
Buyanova, IA
Chen, WM
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 166-169
Authors:
Buyanova, IA
Monemar, B
Lindstrom, JL
Hallberg, T
Murin, LI
Markevich, VP
Citation: Ia. Buyanova et al., Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures, MAT SCI E B, 72(2-3), 2000, pp. 146-149
Authors:
Wagner, M
Buyanova, IA
Thinh, NQ
Chen, WM
Monemar, B
Lindstrom, JL
Amano, H
Akasaki, I
Citation: M. Wagner et al., Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN, PHYS REV B, 62(24), 2000, pp. 16572-16577
Authors:
Hai, PN
Chen, WM
Buyanova, IA
Monemar, B
Amano, H
Akasaki, I
Citation: Pn. Hai et al., Ga-related defect in as-grown Zn-doped GaN: An optically detected magneticresonance study, PHYS REV B, 62(16), 2000, pp. R10607-R10609
Authors:
Edwards, NV
Bremser, MD
Batchelor, AD
Buyanova, IA
Madsen, LD
Yoo, SD
Welhkamp, T
Wilmers, K
Cobet, C
Esser, N
Davis, RF
Aspnes, DE
Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
Authors:
Buyanova, IA
Hallberg, T
Murin, LI
Markevich, VP
Monemar, B
Lindstrom, JL
Citation: Ia. Buyanova et al., Effect of high-temperature electron irradiation on the formation of radiative defects in silicon, PHYSICA B, 274, 1999, pp. 528-531
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Authors:
Chen, WM
Buyanov, AV
Buyanova, IA
Lundstrom, T
Bi, WG
Zeng, YP
Tu, CW
Citation: Wm. Chen et al., Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures, PHYS SCR, T79, 1999, pp. 103-105
Authors:
Buyanova, IA
Wagner, M
Chen, WM
Edwards, NV
Monemar, B
Lindstrom, JL
Bremser, MD
Davis, RF
Amano, H
Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Bergman, JP
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy, APPL PHYS L, 75(4), 1999, pp. 501-503
Authors:
Buyanova, IA
Chen, WM
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures, APPL PHYS L, 75(24), 1999, pp. 3781-3783
Authors:
Buyanova, IA
Chen, WM
Bi, WG
Zeng, YP
Tu, CW
Citation: Ia. Buyanova et al., Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures, APPL PHYS L, 75(12), 1999, pp. 1733-1735