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Results:
1-18
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Results: 18
Authors:
GLASER ER
KENNEDY TA
CARLOS WE
FREITAS JA
WICKENDEN AE
KOLESKE DD
Citation: Er. Glaser et al., OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF EPITAXIAL GAN, Physical review. B, Condensed matter, 57(15), 1998, pp. 8957-8965
Authors:
CARLOS WE
NAKAMURA S
Citation: We. Carlos et S. Nakamura, MAGNETIC-RESONANCE STUDIES OF GAN-BASED LEDS, Journal of crystal growth, 190, 1998, pp. 794-797
Authors:
GLASER ER
KENNEDY TA
CARLOS WE
RUDEN PP
NAKAMURA S
Citation: Er. Glaser et al., RECOMBINATION PROCESSES IN INXGA1-XN LIGHT-EMITTING-DIODES STUDIED THROUGH OPTICALLY DETECTED MAGNETIC-RESONANCE, Applied physics letters, 73(21), 1998, pp. 3123-3125
Authors:
FREITAS JA
KENNEDY TA
GLASER ER
CARLOS WE
Citation: Ja. Freitas et al., OPTICAL AND MAGNETIC-RESONANCE CHARACTERIZATION OF UNDOPED AND DOPED WURTZITE GAN FILMS DEPOSITED ON SAPPHIRE SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 185-188
Authors:
CARLOS WE
NAKAMURA S
Citation: We. Carlos et S. Nakamura, PARAMAGNETIC-RESONANCE IN GAN-BASED SINGLE QUANTUM-WELLS, Applied physics letters, 70(15), 1997, pp. 2019-2021
Authors:
CARLOS WE
GLASER ER
KENNEDY TA
NAKAMURA S
Citation: We. Carlos et al., MAGNETIC-RESONANCE STUDIES OF GAN BASED LIGHT-EMITTING-DIODES, Journal of electronic materials, 25(5), 1996, pp. 851-854
Authors:
CARLOS WE
PROKES SM
Citation: We. Carlos et Sm. Prokes, OXYGEN-ASSOCIATED DEFECTS NEAR SI-SIO2 INTERFACES IN POROUS SI AND THEIR ROLE IN PHOTOLUMINESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1653-1656
Authors:
KENNEDY TA
GLASER ER
FREITAS JA
CARLOS WE
KHAN MA
WICKENDEN DK
Citation: Ta. Kennedy et al., NATIVE DEFECTS AND DOPANTS IN GAN STUDIED THROUGH PHOTOLUMINESCENCE AND OPTICALLY DETECTED MAGNETIC-RESONANCE, Journal of electronic materials, 24(4), 1995, pp. 219-223
Authors:
PROKES SM
CARLOS WE
Citation: Sm. Prokes et We. Carlos, OXYGEN DEFECT CENTER RED ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM FRESHLY ETCHED AND OXIDIZED POROUS SILICON, Journal of applied physics, 78(4), 1995, pp. 2671-2674
Authors:
CARLOS WE
PROKES SM
Citation: We. Carlos et Sm. Prokes, THE EX DEFECT CENTER IN POROUS SILICON, Journal of applied physics, 78(3), 1995, pp. 2129-2131
Authors:
CARLOS WE
GLASER ER
KENNEDY TA
NAKAMURA S
Citation: We. Carlos et al., PARAMAGNETIC-RESONANCE IN GAN-BASED LIGHT-EMITTING-DIODES, Applied physics letters, 67(16), 1995, pp. 2376-2378
Authors:
PROKES SM
CARLOS WE
GLEMBOCKI OJ
Citation: Sm. Prokes et al., DEFECT-BASED MODEL FOR ROOM-TEMPERATURE VISIBLE PHOTOLUMINESCENCE IN POROUS SILICON, Physical review. B, Condensed matter, 50(23), 1994, pp. 17093-17096
Authors:
ZVANUT ME
CARLOS WE
FREITAS JA
JAMISON KD
HELLMER RP
Citation: Me. Zvanut et al., IDENTIFICATION OF PHOSPHORUS IN DIAMOND THIN-FILMS USING ELECTRON-PARAMAGNETIC-RESONANCE SPECTROSCOPY, Applied physics letters, 65(18), 1994, pp. 2287-2289
Authors:
CARLOS WE
PROKES SM
Citation: We. Carlos et Sm. Prokes, LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN POROUS SILICON, Applied physics letters, 65(10), 1994, pp. 1245-1247
Authors:
CARLOS WE
FREITAS JA
KHAN MA
OLSON DT
KUZNIA JN
Citation: We. Carlos et al., ELECTRON-SPIN-RESONANCE STUDIES OF DONORS IN WURTZITE GAN, Physical review. B, Condensed matter, 48(24), 1993, pp. 17878-17884
Authors:
RUBINSTEIN M
LUBITZ P
CARLOS WE
BROUSSARD PR
CHRISEY DB
HORWITZ J
KREBS JJ
Citation: M. Rubinstein et al., PROPERTIES OF SUPERCONDUCTOR-FERROMAGNET BILAYERS - YBA2CUO3-FE AND YBA2CUO3-PERMALLOY, Physical review. B, Condensed matter, 47(22), 1993, pp. 15350-15353
Authors:
KHAN MA
OLSON DT
KUZNIA JN
CARLOS WE
FREITAS JA
Citation: Ma. Khan et al., THE NATURE OF DONOR CONDUCTION IN N-GAN, Journal of applied physics, 74(9), 1993, pp. 5901-5903
Authors:
ZVANUT ME
CARLOS WE
PAINE DC
CARAGIANIS C
Citation: Me. Zvanut et al., ATOMIC-STRUCTURE OF GE-RELATED POINT-DEFECTS IN GE-INCORPORATED OXIDE-FILMS, Applied physics letters, 63(22), 1993, pp. 3049-3051
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