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Results: 1-12 |
Results: 12
DETERMINATION OF EXCESS CURRENT DUE TO IMPACT IONIZATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: POLICICCHIO I PECORA A CARLUCCIO R MARIUCCI L FORTUNATO G PLAIS F PRIBAT D
Citation: I. Policicchio et al., DETERMINATION OF EXCESS CURRENT DUE TO IMPACT IONIZATION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Solid-state electronics, 42(4), 1998, pp. 613-618
COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS
Authors: PECORA A MARIUCCI L CARLUCCIO R FORTUNATO G LEGAGNEUX P PLAIS F REITA C PRIBAT D STOEMENOS J
Citation: A. Pecora et al., COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 707-714
DETERMINATION OF HOT-CARRIER-INDUCED INTERFACE STATE DENSITY IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: MARIUCCI L FORTUNATO G CARLUCCIO R PECORA A GIOVANNINI S MASSUSSI F COLALONGO L VALDINOCI M
Citation: L. Mariucci et al., DETERMINATION OF HOT-CARRIER-INDUCED INTERFACE STATE DENSITY IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 84(4), 1998, pp. 2341-2348
STRUCTURE OF POLY-SI FILMS OBTAINED BY LASER ANNEALING
Authors: CARLUCCIO R CINA S FORTUNATO G FRILIGKOS S STOEMENOS J
Citation: R. Carluccio et al., STRUCTURE OF POLY-SI FILMS OBTAINED BY LASER ANNEALING, Thin solid films, 296(1-2), 1997, pp. 57-60
STRUCTURAL CHARACTERIZATION OF ALPHA-SI FILMS CRYSTALLIZED BY COMBINED FURNACE AND LASER ANNEALING
Authors: FRILIGKOS S PAPAIOANNOU V STOEMENOS J CARLUCCIO R CINA S FORTUNATO G
Citation: S. Friligkos et al., STRUCTURAL CHARACTERIZATION OF ALPHA-SI FILMS CRYSTALLIZED BY COMBINED FURNACE AND LASER ANNEALING, Journal of crystal growth, 182(3-4), 1997, pp. 341-351
HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: GIOVANNINI S CARLUCCIO R MARIUCCI L PECORA A FORTUNATO G REITA C PLAIS F PRIBAT D
Citation: S. Giovannini et al., HOT-CARRIER-INDUCED MODIFICATIONS TO THE NOISE PERFORMANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 71(9), 1997, pp. 1216-1218
NOISE PERFORMANCES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION
Authors: CARLUCCIO R CORRADETTI A FORTUNATO G REITA C LEGAGNEUX P PLAIS F PRIBAT D
Citation: R. Carluccio et al., NOISE PERFORMANCES IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER CRYSTALLIZATION, Applied physics letters, 71(5), 1997, pp. 578-580
EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/
Authors: CORRADETTI A LEONI R CARLUCCIO R FORTUNATO G REITA C PLAIS F PRIBAT D
Citation: A. Corradetti et al., EVIDENCE OF CARRIER NUMBER FLUCTUATION AS ORIGIN OF 1 F NOISE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS/, Applied physics letters, 67(12), 1995, pp. 1730-1732
MICROSTRUCTURE OF POLYCRYSTALLINE SILICON FILMS OBTAINED BY COMBINED FURNACE AND LASER ANNEALING
Authors: CARLUCCIO R STOEMENOS J FORTUNATO G MEAKIN DB BIANCONI M
Citation: R. Carluccio et al., MICROSTRUCTURE OF POLYCRYSTALLINE SILICON FILMS OBTAINED BY COMBINED FURNACE AND LASER ANNEALING, Applied physics letters, 66(11), 1995, pp. 1394-1396
APPLICATION OF THE PHOTO INDUCED DISCHARGE TECHNIQUE FOR THE INVESTIGATION OF A-SI-H THIN-FILM-TRANSISTOR INSTABILITY
Authors: FORTUNATO G CARLUCCIO R MARIUCCI L
Citation: G. Fortunato et al., APPLICATION OF THE PHOTO INDUCED DISCHARGE TECHNIQUE FOR THE INVESTIGATION OF A-SI-H THIN-FILM-TRANSISTOR INSTABILITY, Journal of non-crystalline solids, 166, 1993, pp. 735-738
ACTIVATED HYDROGEN EFFECTS ON THE ELECTRICAL STABILITY OF A-SI-H THIN-FILM TRANSISTORS
Authors: CARLUCCIO R FORTUNATO G MILNE WI
Citation: R. Carluccio et al., ACTIVATED HYDROGEN EFFECTS ON THE ELECTRICAL STABILITY OF A-SI-H THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 166, 1993, pp. 751-754
HYDROGENATED AMORPHOUS-SILICON BASED LIGHT-ADDRESSABLE POTENTIOMETRICSENSOR (LAPS) FOR HYDROGEN DETECTION
Authors: PECORA A FORTUNATO G CARLUCCIO R SACCO S
Citation: A. Pecora et al., HYDROGENATED AMORPHOUS-SILICON BASED LIGHT-ADDRESSABLE POTENTIOMETRICSENSOR (LAPS) FOR HYDROGEN DETECTION, Journal of non-crystalline solids, 166, 1993, pp. 793-796
Risultati: 1-12 |