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Results: 1-25 | 26-41
Results: 1-25/41
GaN electronics for high power, high temperature applications
Authors: Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation: Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
Dysfunction of microvascular endothelial cells induced by tumor necrosis factor (TNF alpha): cellular and molecular mechanism
Authors: Jin, HM Liu, QH Cao, XA Wu, ZH Zhang, GP Zhang, M Sha, ZY
Citation: Hm. Jin et al., Dysfunction of microvascular endothelial cells induced by tumor necrosis factor (TNF alpha): cellular and molecular mechanism, CL HEMORH M, 23(2-4), 2000, pp. 109-112
Common-base operation of GaN bipolar junction transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Abernathy, CR Pearton, SJ Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Chu, SNG
Citation: Xa. Cao et al., Common-base operation of GaN bipolar junction transistors, EL SOLID ST, 3(7), 2000, pp. 333-334
High current, common-base GaN/AlGaN heterojunction bipolar transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Surface conversion effects in plasma-damaged p-GaN
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Surface conversion effects in plasma-damaged p-GaN, MRS I J N S, 5, 2000, pp. NIL_481-NIL_490
High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges, MRS I J N S, 5, 2000, pp. NIL_715-NIL_720
Processing and device performance of GaN power rectifiers
Authors: Zhang, AP Dang, GT Cao, XA Cho, H Ren, F Han, J Chyi, JI Lee, CM Nee, TE Chuo, CC Chi, GC Chu, SNG Wilson, RG Pearton, SJ
Citation: Ap. Zhang et al., Processing and device performance of GaN power rectifiers, MRS I J N S, 5, 2000, pp. NIL_721-NIL_726
Comparison of implant isolation species for GaN field-effect transistor structures
Authors: Dang, G Cao, XA Ren, F Pearton, SJ Han, J Baca, AG Shul, RJ Wilson, RG
Citation: G. Dang et al., Comparison of implant isolation species for GaN field-effect transistor structures, MRS I J N S, 5, 2000, pp. NIL_727-NIL_732
Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Dang, G Zhang, AP Ren, F Cao, XA Pearton, SJ Wilson, RG
Citation: Ay. Polyakov et al., Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers, J VAC SCI B, 18(3), 2000, pp. 1237-1243
Advanced processing of GaN for electronic devices
Authors: Cao, XA Pearton, SJ Ren, F
Citation: Xa. Cao et al., Advanced processing of GaN for electronic devices, CR R SOLID, 25(4), 2000, pp. 279-390
High breakdown voltage Au/Pt/GaN Schottky diodes
Authors: Dang, GT Zhang, AP Mshewa, MM Ren, F Chyi, JI Lee, CM Chuo, CC Chi, GC Han, J Chu, SNG Wilson, RG Cao, XA Pearton, SJ
Citation: Gt. Dang et al., High breakdown voltage Au/Pt/GaN Schottky diodes, J VAC SCI A, 18(4), 2000, pp. 1135-1138
Schottky diode measurements of dry etch damage in n- and p-type GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Shul, RJ Zhang, L
Citation: Xa. Cao et al., Schottky diode measurements of dry etch damage in n- and p-type GaN, J VAC SCI A, 18(4), 2000, pp. 1144-1148
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
Authors: Zhang, AP Dang, GT Ren, F Van Hove, JM Klaassen, JJ Chow, PP Cao, XA Pearton, SJ
Citation: Ap. Zhang et al., Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma, J VAC SCI A, 18(4), 2000, pp. 1149-1152
Plasma damage in p-GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Van Hove, JM Hickman, RA Shul, RJ Zhang, L
Citation: Xa. Cao et al., Plasma damage in p-GaN, J ELEC MAT, 29(3), 2000, pp. 256-261
Effect of thermal stability of GaN epi-layer on the Schottky diodes
Authors: Lee, KN Cao, XA Abernathy, CR Pearton, SJ Zhang, AP Ren, F Hickman, R Van Hove, JM
Citation: Kn. Lee et al., Effect of thermal stability of GaN epi-layer on the Schottky diodes, SOL ST ELEC, 44(7), 2000, pp. 1203-1208
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part I - npn structures, SOL ST ELEC, 44(7), 2000, pp. 1255-1259
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Zhang, AP Dang, G Monier, C Pearton, SJ Ren, F
Citation: Xa. Cao et al., Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures, SOL ST ELEC, 44(7), 2000, pp. 1261-1265
Temperature dependence of GaN high breakdown voltage diode rectifiers
Authors: Chyi, JI Lee, CM Chuo, CC Cao, XA Dang, GT Zhang, AP Ren, F Pearton, SJ Chu, SNG Wilson, RG
Citation: Ji. Chyi et al., Temperature dependence of GaN high breakdown voltage diode rectifiers, SOL ST ELEC, 44(4), 2000, pp. 613-617
Surface and bulk leakage currents in high breakdown GaN rectifiers
Authors: Ren, F Zhang, AP Dang, GT Cao, XA Cho, H Pearton, SJ Chyi, JI Lee, CM Chuo, CC
Citation: F. Ren et al., Surface and bulk leakage currents in high breakdown GaN rectifiers, SOL ST ELEC, 44(4), 2000, pp. 619-622
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors
Authors: Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Ren, F Dang, G Zhang, AP Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors, SOL ST ELEC, 44(4), 2000, pp. 649-654
GaN/AlGaN HBT fabrication
Authors: Ren, F Han, J Hickman, R Van Hove, JM Chow, PP Klaassen, JJ LaRoche, JR Jung, KB Cho, H Cao, XA Donovan, SM Kopf, RF Wilson, RG Baca, AG Shul, RJ Zhang, L Willison, CG Abernathy, CR Pearton, SJ
Citation: F. Ren et al., GaN/AlGaN HBT fabrication, SOL ST ELEC, 44(2), 2000, pp. 239-244
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Authors: Dang, G Luo, B Zhang, AP Cao, XA Ren, F Pearton, SJ Cho, H Hobson, WS Lopata, J van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ
Citation: G. Dang et al., npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions, SOL ST ELEC, 44(12), 2000, pp. 2097-2100
p-Ohmic contact resistance for GaAs(C)/GaN(Mg)
Authors: Dang, GT Zhang, AP Ren, F Donovan, SM Abernathy, CR Hobson, WS Lopata, J Chu, SNG Cao, XA Wilson, RG
Citation: Gt. Dang et al., p-Ohmic contact resistance for GaAs(C)/GaN(Mg), SOL ST ELEC, 44(1), 2000, pp. 105-109
Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Wilson, RG Van Hove, JM
Citation: Xa. Cao et al., Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr, J APPL PHYS, 87(3), 2000, pp. 1091-1095
GaNN- and P-type Schottky diodes: Effect of dry etch damage
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Van Hove, JM
Citation: Xa. Cao et al., GaNN- and P-type Schottky diodes: Effect of dry etch damage, IEEE DEVICE, 47(7), 2000, pp. 1320-1324
Risultati: 1-25 | 26-41