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Results: 1-21 |
Results: 21
Mode of reproduction and amplified fragment length polymorphism variation in purple needlegrass (Nassella pulchra): utilization of natural germplasm sources
Authors: Larson, SR Cartier, E McCracken, CL Dyer, D
Citation: Sr. Larson et al., Mode of reproduction and amplified fragment length polymorphism variation in purple needlegrass (Nassella pulchra): utilization of natural germplasm sources, MOL ECOL, 10(5), 2001, pp. 1165-1177
Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
Authors: Ragnarsson, LA Guha, S Bojarczuk, NA Cartier, E Fischetti, MV Rim, K Karasinski, J
Citation: La. Ragnarsson et al., Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates, IEEE ELEC D, 22(10), 2001, pp. 490-492
Imaging of oxide and interface charges in SiO2-Si
Authors: Ludeke, R Cartier, E
Citation: R. Ludeke et E. Cartier, Imaging of oxide and interface charges in SiO2-Si, MICROEL ENG, 59(1-4), 2001, pp. 259-263
Ultrathin high-K metal oxides on silicon: processing, characterization andintegration issues
Authors: Gusev, EP Cartier, E Buchanan, DA Gribelyuk, M Copel, M Okorn-Schmidt, H D'Emic, C
Citation: Ep. Gusev et al., Ultrathin high-K metal oxides on silicon: processing, characterization andintegration issues, MICROEL ENG, 59(1-4), 2001, pp. 341-349
Materials characterization of ZrO2-SiO2 and HfO2-SiO2 binary oxides deposited by chemical solution deposition
Authors: Neumayer, DA Cartier, E
Citation: Da. Neumayer et E. Cartier, Materials characterization of ZrO2-SiO2 and HfO2-SiO2 binary oxides deposited by chemical solution deposition, J APPL PHYS, 90(4), 2001, pp. 1801-1808
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
Authors: Callegari, A Cartier, E Gribelyuk, M Okorn-Schmidt, HF Zabel, T
Citation: A. Callegari et al., Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films, J APPL PHYS, 90(12), 2001, pp. 6466-6475
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactiveatomic-beam deposition
Authors: Guha, S Cartier, E Bojarczuk, NA Bruley, J Gignac, L Karasinski, J
Citation: S. Guha et al., High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactiveatomic-beam deposition, J APPL PHYS, 90(1), 2001, pp. 512-514
Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility
Authors: Ragnarsson, LA Guha, S Copel, M Cartier, E Bojarczuk, NA Karasinski, J
Citation: La. Ragnarsson et al., Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility, APPL PHYS L, 78(26), 2001, pp. 4169-4171
Robustness of ultrathin aluminum oxide dielectrics on Si(001) (vol 78, pg 2670, 2001)
Authors: Copel, M Cartier, E Gusev, EP Guha, S Bojarczuk, N Poppeller, M
Citation: M. Copel et al., Robustness of ultrathin aluminum oxide dielectrics on Si(001) (vol 78, pg 2670, 2001), APPL PHYS L, 78(26), 2001, pp. 4199-4199
Imaging of trapped charge in SiO2 and at the SiO2-Si interface
Authors: Ludeke, R Cartier, E
Citation: R. Ludeke et E. Cartier, Imaging of trapped charge in SiO2 and at the SiO2-Si interface, APPL PHYS L, 78(25), 2001, pp. 3998-4000
Interface studies of tungsten gate metal-oxide-silicon capacitors
Authors: Shang, HL White, MH Guarini, KW Solomon, P Cartier, E McFeely, FR Yurkas, JJ Lee, WC
Citation: Hl. Shang et al., Interface studies of tungsten gate metal-oxide-silicon capacitors, APPL PHYS L, 78(20), 2001, pp. 3139-3141
Robustness of ultrathin aluminum oxide dielectrics on Si(001)
Authors: Copel, M Cartier, E Gusev, EP Guha, S Bojarczuk, N Poppeller, M
Citation: M. Copel et al., Robustness of ultrathin aluminum oxide dielectrics on Si(001), APPL PHYS L, 78(18), 2001, pp. 2670-2672
Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)
Authors: Copel, M Cartier, E Ross, FM
Citation: M. Copel et al., Formation of a stratified lanthanum silicate dielectric by reaction with Si(001), APPL PHYS L, 78(11), 2001, pp. 1607-1609
Hot carrier transport effects in Al2O3-based metal-oxide-semiconductor structures
Authors: Ludeke, R Cuberes, MT Cartier, E
Citation: R. Ludeke et al., Hot carrier transport effects in Al2O3-based metal-oxide-semiconductor structures, J VAC SCI B, 18(4), 2000, pp. 2153-2159
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
Authors: Guha, S Cartier, E Gribelyuk, MA Bojarczuk, NA Copel, MC
Citation: S. Guha et al., Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics, APPL PHYS L, 77(17), 2000, pp. 2710-2712
Local transport and trapping issues in Al2O3 gate oxide structures
Authors: Ludeke, R Cuberes, MT Cartier, E
Citation: R. Ludeke et al., Local transport and trapping issues in Al2O3 gate oxide structures, APPL PHYS L, 76(20), 2000, pp. 2886-2888
High-resolution depth profiling in ultrathin Al2O3 films on Si
Authors: Gusev, EP Copel, M Cartier, E Baumvol, IJR Krug, C Gribelyuk, MA
Citation: Ep. Gusev et al., High-resolution depth profiling in ultrathin Al2O3 films on Si, APPL PHYS L, 76(2), 2000, pp. 176-178
CMOS and Memories: From 100 nm to 10 nm!
Authors: Tiwari, S Solomon, PM Welser, JJ Jones, EC McFeely, FR Cartier, E
Citation: S. Tiwari et al., CMOS and Memories: From 100 nm to 10 nm!, MICROEL ENG, 46(1-4), 1999, pp. 3-6
Hot Electron Emission Lithography: a method for efficient large area e-beam projection
Authors: Poppeller, M Cartier, E Tromp, RM
Citation: M. Poppeller et al., Hot Electron Emission Lithography: a method for efficient large area e-beam projection, MICROEL ENG, 46(1-4), 1999, pp. 183-186
Defects in thermal oxide studied by photoluminescence spectroscopy
Authors: Nishikawa, H Stathis, JH Cartier, E
Citation: H. Nishikawa et al., Defects in thermal oxide studied by photoluminescence spectroscopy, APPL PHYS L, 75(9), 1999, pp. 1219-1221
Determination of the energy-dependent conduction band mass in SiO2
Authors: Ludeke, R Cartier, E Schenk, A
Citation: R. Ludeke et al., Determination of the energy-dependent conduction band mass in SiO2, APPL PHYS L, 75(10), 1999, pp. 1407-1409
Risultati: 1-21 |