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Results: 1-25 | 26-44
Results: 1-25/44
Tensor polarization t(20) of the deuteron and the rho pi gamma process
Authors: Ye, T Chen, YB Cheng, TS
Citation: T. Ye et al., Tensor polarization t(20) of the deuteron and the rho pi gamma process, COMM TH PHY, 35(4), 2001, pp. 455-458
A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy
Authors: Marlafeka, S Bock, N Cheng, TS Novikov, SV Winser, AJ Harrison, I Foxon, CT Brown, PD
Citation: S. Marlafeka et al., A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy, J CRYST GR, 230(3-4), 2001, pp. 415-420
Blue emission from arsenic doped gallium nitride
Authors: Winser, AJ Harrison, I Novikov, SV Davis, CS Campion, R Cheng, TS Foxon, CT
Citation: Aj. Winser et al., Blue emission from arsenic doped gallium nitride, J CRYST GR, 230(3-4), 2001, pp. 527-532
Growth of GaNAs films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Davis, CS Cheng, TS Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Growth of GaNAs films by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 486-490
Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire
Authors: Davis, CS Novikov, SV Cheng, TS Campion, RP Foxon, CT
Citation: Cs. Davis et al., Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire, J CRYST GR, 226(2-3), 2001, pp. 203-208
Energy relaxation by hot electrons in n-GaN epilayers
Authors: Stanton, NM Kent, AJ Akimov, AV Hawker, P Cheng, TS Foxon, CT
Citation: Nm. Stanton et al., Energy relaxation by hot electrons in n-GaN epilayers, J APPL PHYS, 89(2), 2001, pp. 973-979
Effects of partial premixing on pollutant emissions in swirling methane jet flames
Authors: Cheng, TS Chao, YC Wu, DC Hsu, HW Yuan, T
Citation: Ts. Cheng et al., Effects of partial premixing on pollutant emissions in swirling methane jet flames, COMB FLAME, 125(1-2), 2001, pp. 865-878
Boundary sequences of the NADPH oxidase p67(phox) C-terminal SH3 domain play on its specificity
Authors: Hwang, SL Cheng, TS Chen, CH Sun, YJ Hsiao, CD Hong, YR
Citation: Sl. Hwang et al., Boundary sequences of the NADPH oxidase p67(phox) C-terminal SH3 domain play on its specificity, BIOC BIOP R, 289(1), 2001, pp. 97-102
Absorption of nonequilibrium acoustic phonons by low-mobility electrons inGaN
Authors: Stanton, NM Akimov, AV Kent, AJ Cheng, TS Foxon, CT
Citation: Nm. Stanton et al., Absorption of nonequilibrium acoustic phonons by low-mobility electrons inGaN, APPL PHYS L, 78(8), 2001, pp. 1089-1091
Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality
Authors: Bulbul, MM Smith, SRP Obradovic, B Cheng, TS Foxon, CT
Citation: Mm. Bulbul et al., Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality, EUR PHY J B, 14(3), 2000, pp. 423-429
X-ray studies of group III-nitride quantum wells with high quality interfaces
Authors: Fewster, PF Andrew, NL Hughes, OH Staddon, C Foxon, CT Bell, A Cheng, TS Wang, T Sakai, S Jacobs, K Moerman, I
Citation: Pf. Fewster et al., X-ray studies of group III-nitride quantum wells with high quality interfaces, J VAC SCI B, 18(4), 2000, pp. 2300-2303
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
Authors: Cherkashin, NA Bert, NA Musikhin, YG Novikov, SV Cheng, TS Foxon, CT
Citation: Na. Cherkashin et al., TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate, SEMICONDUCT, 34(8), 2000, pp. 867-871
Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN
Authors: Blant, AV Hughes, OH Cheng, TS Novikov, SV Foxon, CT
Citation: Av. Blant et al., Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN, PLASMA SOUR, 9(1), 2000, pp. 12-17
An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy
Authors: Bell, A Harrison, I Cheng, TS Korakakis, D Foxon, CT Novikov, S Ber, BY Kudriavtsev, YA
Citation: A. Bell et al., An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy, SEMIC SCI T, 15(8), 2000, pp. 789-793
The implications of spontaneous polarization effects for carrier transportmeasurements in GaN
Authors: Harris, JJ Lee, KJ Webb, JB Tang, H Harrison, I Flannery, LB Cheng, TS Foxon, CT
Citation: Jj. Harris et al., The implications of spontaneous polarization effects for carrier transportmeasurements in GaN, SEMIC SCI T, 15(4), 2000, pp. 413-417
Quantitative imaging of OH concentrations in a swirling methane jet flame via single-pulse laser-induced predissociative fluorescence
Authors: Chao, YC Wu, DC Cheng, TS
Citation: Yc. Chao et al., Quantitative imaging of OH concentrations in a swirling methane jet flame via single-pulse laser-induced predissociative fluorescence, OPT ENG, 39(6), 2000, pp. 1441-1449
Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies
Authors: Goldhahn, R Shokhovets, S Scheiner, J Gobsch, G Cheng, TS Foxon, CT Kaiser, U Kipshidze, GD Richter, W
Citation: R. Goldhahn et al., Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies, PHYS ST S-A, 177(1), 2000, pp. 107-115
Arsenic-doped GaN grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Cheng, TS Davis, CS Campion, RP Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Arsenic-doped GaN grown by molecular beam epitaxy, J CRYST GR, 219(4), 2000, pp. 327-334
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
Authors: Xu, HZ Wang, ZG Harrison, I Bell, A Ansell, BJ Winser, AJ Cheng, TS Foxon, CT Kawabe, M
Citation: Hz. Xu et al., Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy, J CRYST GR, 217(3), 2000, pp. 228-232
Direct evidence for defect conduction at interface between gallium nitrideand sapphire
Authors: Ansell, BJ Harrison, L Foxon, CT Harris, JJ Cheng, TS
Citation: Bj. Ansell et al., Direct evidence for defect conduction at interface between gallium nitrideand sapphire, ELECTR LETT, 36(14), 2000, pp. 1237-1239
Imaging phonon drag in gallium nitride
Authors: Stanton, NM Akimov, AV Kent, AJ Cavill, SA Cheng, TS Foxon, CT
Citation: Nm. Stanton et al., Imaging phonon drag in gallium nitride, APPL PHYS L, 77(21), 2000, pp. 3403-3405
Strong blue emission from As doped GaN grown by molecular beam epitaxy
Authors: Winser, AJ Novikov, SV Davis, CS Cheng, TS Foxon, CT Harrison, I
Citation: Aj. Winser et al., Strong blue emission from As doped GaN grown by molecular beam epitaxy, APPL PHYS L, 77(16), 2000, pp. 2506-2508
Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells
Authors: Krivolapchuk, VV Moskalenko, ES Zhmodikov, AL Cheng, TS Foxon, CT
Citation: Vv. Krivolapchuk et al., Manifestation of collective properties of spatially indirect excitons in GaAs/AlGaAs asymmetric double quantum wells, PHYS SOL ST, 41(2), 1999, pp. 291-295
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)
Authors: Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation: Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 33(2), 1999, pp. 222-222
Photoenhanced wet chemical etching of MBE grown gallium nitride
Authors: Stanton, NM Kent, AJ Hawker, P Cheng, TS Foxon, CT Korakakis, D Campion, RP Staddon, CR Middleton, JR
Citation: Nm. Stanton et al., Photoenhanced wet chemical etching of MBE grown gallium nitride, MAT SCI E B, 68(1), 1999, pp. 52-55
Risultati: 1-25 | 26-44