AAAAAA
Results:
1-16
|
Results: 16
Authors:
ZURAUSKIENE N
DARGYS A
Citation: N. Zurauskiene et A. Dargys, DISSIPATIVE ELECTRON-TUNNELING FROM SHALLOW DONORS IN GE, Physica scripta. T, 57(3), 1998, pp. 472-475
Authors:
DARGYS A
KUNDROTAS J
Citation: A. Dargys et J. Kundrotas, IMPACT IONIZATION OF EXCITONS BY HOT CARRIERS IN QUANTUM-WELLS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1258-1261
Authors:
CESNA A
KUNDROTAS J
DARGYS A
Citation: A. Cesna et al., PHOTOLUMINESCENCE TRANSIENTS DUE TO DONOR AND EXCITON AVALANCHE BREAKDOWN, Journal of luminescence, 78(2), 1998, pp. 157-166
Authors:
DARGYS A
ZRAUSKIENE N
BERTULIS K
Citation: A. Dargys et al., HOLE TUNNELING FROM BERYLLIUM ACCEPTORS IN GAAS, Journal of physics. Condensed matter, 9(39), 1997, pp. 557-559
Authors:
DARGYS A
KUNDROTAS J
Citation: A. Dargys et J. Kundrotas, PIEZOELECTRIC-INTERACTION-LIMITED CAPTURE PROCESS IN A(3)B(5) COMPOUNDS, Physica status solidi. b, Basic research, 200(2), 1997, pp. 509-518
Authors:
DARGYS A
KUNDROTAS J
Citation: A. Dargys et J. Kundrotas, DONOR AVALANCHE BREAKDOWN FIELD IN N-GAAS - EFFECT OF CONCENTRATION AND LATTICE TEMPERATURE, Solid-state electronics, 41(8), 1997, pp. 1185-1188
Authors:
DARGYS A
KUNDROTAS J
CESNA A
Citation: A. Dargys et al., IMPACT NEUTRALIZATION OF D- IONS IN GAAS AND INP, Journal of applied physics, 82(3), 1997, pp. 1479-1481
Authors:
ZURAUSKIENE N
DARGYS A
Citation: N. Zurauskiene et A. Dargys, ACOUSTIC-PHONON ACTIVATED AND ASSISTED TUNNELING IN GE-SB,P, Acta Physica Polonica. A, 90(5), 1996, pp. 993-996
Authors:
KUNDROTAS J
DARGYS A
CESNA A
Citation: J. Kundrotas et al., THE HOT-ELECTRON DISTRIBUTION FUNCTION UNDER IMPURITY BREAKDOWN CONDITIONS, Physica status solidi. b, Basic research, 194(2), 1996, pp. 649-660
Authors:
KUNDROTAS J
DARGYS A
CESNA A
Citation: J. Kundrotas et al., SHALLOW DONOR IMPACT IONIZATION IN N-INP AND N-GAAS - INFLUENCE OF DOPING AND COMPENSATION, Semiconductor science and technology, 11(5), 1996, pp. 692-696
Authors:
DARGYS A
KUDZMAUSKAS S
ZURAUSKAS S
Citation: A. Dargys et al., DISSIPATIVE ACCEPTOR-VALENCE-BAND TUNNELING IN GAAS-C-AS, Journal of physics. Condensed matter, 7(47), 1995, pp. 8967-8977
Authors:
DARGYS A
ZURAUSKAS S
Citation: A. Dargys et S. Zurauskas, TUNNEL IONIZATION OF SHALLOW ACCEPTERS AND DONORS IN GAAS, Journal of physics. Condensed matter, 7(10), 1995, pp. 2133-2146
Authors:
DARGYS A
ZURAUSKIENE N
Citation: A. Dargys et N. Zurauskiene, DISSIPATIVE ELECTRON-TUNNELING FROM THE PHOSPHORUS GROUND-LEVEL TO THE CONDUCTION-BAND OF SILICON, Journal of applied physics, 78(7), 1995, pp. 4802-4804
Authors:
DARGYS A
ZURAUSKAS S
BERTULIS K
Citation: A. Dargys et al., TUNNEL IONIZATION OF ACCEPTORS IN P-GAAS, Physica status solidi. b, Basic research, 183(2), 1994, pp. 110000055-110000057
Authors:
DARGYS A
ZURAUSKAS S
ZURAUSKIENE N
Citation: A. Dargys et al., FIELD-IONIZATION OF SHALLOW ACCEPTORS, Acta Physica Polonica. A, 84(4), 1993, pp. 629-632
Authors:
DARGYS A
ZURAUSKAS S
Citation: A. Dargys et S. Zurauskas, A NEW METHOD FOR THE STUDY OF EXCITONS IN SEMICONDUCTORS, Semiconductor science and technology, 8(4), 1993, pp. 518-524
Risultati:
1-16
|