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Results: 1-10 |
Results: 10

Authors: FLUERARU C COBIANU C DASCALU D FLUERARU M
Citation: C. Flueraru et al., MICROSCALE FRICTION INVESTIGATION OF POLYSILICON SURFACE USING SCANNING FORCE MICROSCOPY, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 29-33

Authors: COBIANU C SAVANIU C BUIU O DASCALU D ZAHARESCU M PARLOG C VANDENBERG A PECZ B
Citation: C. Cobianu et al., TIN DIOXIDE SOL-GEL DERIVED THAN FILMS DEPOSITED ON POROUS SILICON, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 114-120

Authors: FLUERARU C COBIANU C COSMIN P DASCALU D
Citation: C. Flueraru et al., SURFACE STUDIES OF CHEMICALLY VAPOR-DEPOSITED SILICON FILMS USING FRICTION FORCE MICROSCOPY, Thin solid films, 303(1-2), 1997, pp. 117-121

Authors: FLUERARU C GARTNER M DASCALU D ROTARU C
Citation: C. Flueraru et al., SPECTROELLIPSOMETRIC INVESTIGATION OF LPCVD POLYSILICON - AS DEPOSITED AND AFTER HYDROGENATION, Journal de physique. III, 6(2), 1996, pp. 225-235

Authors: PLUGARU R VASILE E COBIANU C DASCALU D
Citation: R. Plugaru et al., INVESTIGATION OF THE SURFACE OF P-IMPLANTED LPCVD SILICON FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 240-242

Authors: FLUERARU C GARTNER M ROTARU C DASCALU D ANDRIESCU G COSMIN P
Citation: C. Flueraru et al., SPECTRO-ELLIPSOMETRIC INVESTIGATIONS OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS, Microelectronic engineering, 31(1-4), 1996, pp. 309-316

Authors: CALDARARU M CRACIUNOIU F PARASCHIV A CRISTEA D CALDARARU F DASCALU D KLIER C MIREA G VASILE A NICOLAE M
Citation: M. Caldararu et al., SILICON PHOTODIODE-WAVE-GUIDE COUPLING - 2-DIMENSIONAL MODELING, SOFTWARE SIMULATION AND EXPERIMENTS, Solid-state electronics, 39(11), 1996, pp. 1649-1657

Authors: COBIANU C POPA O DASCALU D
Citation: C. Cobianu et al., ELECTRICAL-PROPERTIES OF INTERLEVEL DEPOSITED OXIDES RELATED TO POLYSILICON PREPARATION, Journal de physique. IV, 3(C3), 1993, pp. 467-473

Authors: COBIANU C POPA O DASCALU D
Citation: C. Cobianu et al., ON THE ELECTRICAL-CONDUCTION IN THE INTERPOLYSILICON DIELECTRIC LAYERS, IEEE electron device letters, 14(5), 1993, pp. 213-215

Authors: GAISEANU F COBIANU C DASCALU D
Citation: F. Gaiseanu et al., DEPENDENCE OF THE CHEMICAL ETCH RATE AND ETCH TIME OF SILICON ON THE POST-IMPLANTED DIFFUSION DEPTH - APPLICATION FOR MEMBRANE ACHIEVEMENT, Journal of materials science letters, 12(20), 1993, pp. 1652-1653
Risultati: 1-10 |