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Results: 1-10 |
Results: 10
ASSESSMENT OF OXIDE RELIABILITY AND HOT-CARRIER DEGRADATION IN CMOS TECHNOLOGY
Authors: MAES HE GROESENEKEN G DEGRAEVE R DEBLAUWE J VANDENBOSCH G
Citation: He. Maes et al., ASSESSMENT OF OXIDE RELIABILITY AND HOT-CARRIER DEGRADATION IN CMOS TECHNOLOGY, Microelectronic engineering, 40(3-4), 1998, pp. 147-166
NEW INSIGHTS IN THE RELATION BETWEEN ELECTRON TRAP GENERATION AND THESTATISTICAL PROPERTIES OF OXIDE BREAKDOWN
Authors: DEGRAEVE R GROESENEKEN G BELLENS R OGIER JL DEPAS M ROUSSEL PJ MAES HE
Citation: R. Degraeve et al., NEW INSIGHTS IN THE RELATION BETWEEN ELECTRON TRAP GENERATION AND THESTATISTICAL PROPERTIES OF OXIDE BREAKDOWN, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 904-911
A NEW MODEL FOR THE FIELD-DEPENDENCE OF INTRINSIC AND EXTRINSIC TIME-DEPENDENT DIELECTRIC-BREAKDOWN
Authors: DEGRAEVE R OGIER JL BELLENS R ROUSSEL PJ GROESENEKEN G MAES HE
Citation: R. Degraeve et al., A NEW MODEL FOR THE FIELD-DEPENDENCE OF INTRINSIC AND EXTRINSIC TIME-DEPENDENT DIELECTRIC-BREAKDOWN, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 472-481
ON THE PROPERTIES OF THE GATE AND SUBSTRATE CURRENT AFTER SOFT BREAKDOWN IN ULTRATHIN OXIDE LAYERS
Authors: CRUPI F DEGRAEVE R GROESENEKEN G NIGAM T MAES HE
Citation: F. Crupi et al., ON THE PROPERTIES OF THE GATE AND SUBSTRATE CURRENT AFTER SOFT BREAKDOWN IN ULTRATHIN OXIDE LAYERS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2329-2334
RELIABILITY OF ULTRA-THIN GATE OXIDE BELOW 3 NM IN THE DIRECT TUNNELING REGIME
Authors: DEPAS M DEGRAEVE R NIGAM T GROESENEKEN G HEYNS M
Citation: M. Depas et al., RELIABILITY OF ULTRA-THIN GATE OXIDE BELOW 3 NM IN THE DIRECT TUNNELING REGIME, JPN J A P 1, 36(3B), 1997, pp. 1602-1608
IMPACT OF TUNNEL-OXIDE NITRIDATION ON ENDURANCE AND READ-DISTURB CHARACTERISTICS OF FLASH E(2)PROM DEVICES
Authors: DEBLAUWE J WELLEKENS D VANHOUDT J DEGRAEVE R HASPESLAGH L GROESENEKEN G MAES HE
Citation: J. Deblauwe et al., IMPACT OF TUNNEL-OXIDE NITRIDATION ON ENDURANCE AND READ-DISTURB CHARACTERISTICS OF FLASH E(2)PROM DEVICES, Microelectronic engineering, 36(1-4), 1997, pp. 301-304
THE EFFECT OF EXTERNALLY IMPOSED MECHANICAL-STRESS ON THE HOT-CARRIER-INDUCED DEGRADATION OF DEEP-SUB MICRON NMOSFETS
Authors: DEGRAEVE R GROESENEKEN G DEWOLF I MAES HE
Citation: R. Degraeve et al., THE EFFECT OF EXTERNALLY IMPOSED MECHANICAL-STRESS ON THE HOT-CARRIER-INDUCED DEGRADATION OF DEEP-SUB MICRON NMOSFETS, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 943-950
A NEW ANALYTIC MODEL FOR THE DESCRIPTION OF THE INTRINSIC OXIDE BREAKDOWN STATISTICS OF ULTRA-THIN OXIDES
Authors: DEGRAEVE R ROUSSEL PH GROESENEKEN G MAES HE
Citation: R. Degraeve et al., A NEW ANALYTIC MODEL FOR THE DESCRIPTION OF THE INTRINSIC OXIDE BREAKDOWN STATISTICS OF ULTRA-THIN OXIDES, Microelectronics and reliability, 36(11-12), 1996, pp. 1639-1642
A NEW STATISTICAL-MODEL FOR FITTING BIMODAL OXIDE BREAKDOWN DISTRIBUTIONS AT DIFFERENT FIELD CONDITIONS
Authors: DEGRAEVE R ROUSSEL P OGIER JL GROESENEKEN G MAES HE
Citation: R. Degraeve et al., A NEW STATISTICAL-MODEL FOR FITTING BIMODAL OXIDE BREAKDOWN DISTRIBUTIONS AT DIFFERENT FIELD CONDITIONS, Microelectronics and reliability, 36(11-12), 1996, pp. 1651-1654
OXIDE AND INTERFACE DEGRADATION AND BREAKDOWN UNDER MEDIUM AND HIGH-FIELD INJECTION CONDITIONS - A CORRELATION STUDY
Authors: DEGRAEVE R GROESENEKEN G DEWOLF I MAES HE
Citation: R. Degraeve et al., OXIDE AND INTERFACE DEGRADATION AND BREAKDOWN UNDER MEDIUM AND HIGH-FIELD INJECTION CONDITIONS - A CORRELATION STUDY, Microelectronic engineering, 28(1-4), 1995, pp. 313-316
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