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Results:
1-19
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Results: 19
Authors:
DEGENDT S
KNOTTER DM
KENIS K
DEPAS M
MEURIS M
MERTENS PW
HEYNS MM
Citation: S. Degendt et al., IMPACT OF ORGANIC CONTAMINATION ON THIN GATE OXIDE QUALITY, JPN J A P 1, 37(9A), 1998, pp. 4649-4655
Authors:
REPETTO L
GRANETTO C
VENTURINO A
DEPAS M
GIACONE G
Citation: L. Repetto et al., LUNG-CANCER, Critical reviews in oncology/hematology, 27(2), 1998, pp. 133-134
Authors:
BONI C
BISAGNI G
SAVOLDI L
MORETTI G
VIGNOLI R
FRANCIOSI V
PEZZOLA A
DEPAS M
ZADRO A
Citation: C. Boni et al., TREATMENT OF STAGE IIIB-IV NONSMALL CELL LUNG-CANCER (NSCLC) WITH GEMCITABINE, IFOSFAMIDE, CISPLATIN (GIP) - A PHASE-II STUDY, Annals of oncology, 9, 1998, pp. 439-439
Authors:
DEGRAEVE R
GROESENEKEN G
BELLENS R
OGIER JL
DEPAS M
ROUSSEL PJ
MAES HE
Citation: R. Degraeve et al., NEW INSIGHTS IN THE RELATION BETWEEN ELECTRON TRAP GENERATION AND THESTATISTICAL PROPERTIES OF OXIDE BREAKDOWN, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 904-911
Authors:
DEPAS M
DEGRAEVE R
NIGAM T
GROESENEKEN G
HEYNS M
Citation: M. Depas et al., RELIABILITY OF ULTRA-THIN GATE OXIDE BELOW 3 NM IN THE DIRECT TUNNELING REGIME, JPN J A P 1, 36(3B), 1997, pp. 1602-1608
Authors:
NOLE F
DEBRAUD F
AAPRO M
MINCHELLA I
DEPAS M
ZAMPINO MG
MONTI S
ANDREONI G
GOLDHIRSCH A
Citation: F. Nole et al., PHASE I-II STUDY OF VINORELBINE IN COMBINATION WITH 5-FLUOROURACIL AND FOLINIC ACID AS FIRST-LINE CHEMOTHERAPY IN METASTATIC BREAST-CANCER - A REGIMEN WITH A LOW SUBJECTIVE TOXIC BURDEN, Annals of oncology, 8(9), 1997, pp. 865-870
Authors:
DEPAS M
HEYNS MM
Citation: M. Depas et Mm. Heyns, RELATION BETWEEN TRAP CREATION AND BREAKDOWN DURING TUNNELING CURRENTSTRESSING OF SUB 3 NM GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 21-24
Authors:
DEPAS M
NIGAM T
HEYNS MM
Citation: M. Depas et al., DEFINITION OF DIELECTRIC-BREAKDOWN FOR ULTRA-THIN (LESS-THAN-2 NM) GATE OXIDES, Solid-state electronics, 41(5), 1997, pp. 725-728
Authors:
TONOVA D
DEPAS M
VANHELLEMONT J
Citation: D. Tonova et al., INTERPRETATION OF SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS OF ULTRATHIN DIELECTRIC LAYERS ON SILICON - IMPACT OF ACCURACY OF THE SILICON OPTICAL-CONSTANTS, Thin solid films, 288(1-2), 1996, pp. 64-68
Authors:
DEPAS M
VERMEIRE B
HEYNS MM
Citation: M. Depas et al., BREAKDOWN AND DEFECT GENERATION IN ULTRATHIN GATE OXIDE, Journal of applied physics, 80(1), 1996, pp. 382-387
Authors:
DEPAS M
NIGAM T
HEYNS MM
Citation: M. Depas et al., SOFT BREAKDOWN OF ULTRA-THIN GATE OXIDE LAYERS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1499-1504
Authors:
DEPAS M
VERMEIRE B
MARTENS PW
MEURIS M
HEYNS MM
Citation: M. Depas et al., WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING, Semiconductor science and technology, 10(6), 1995, pp. 753-758
Authors:
MOUREAU F
WOUTERS J
DEPAS M
VERCAUTEREN DP
DURANT F
DUCREY F
KOENIG JJ
JARREAU FX
Citation: F. Moureau et al., A REVERSIBLE MONOAMINE-OXIDASE INHIBITOR TOLOXATONE - COMPARISON OF ITS PHYSICOCHEMICAL PROPERTIES WITH THOSE OF OTHER INHIBITORS INCLUDINGBROFAROMINE, HARMINE, R40519 AND MOCLOBEMIDE, European journal of medicinal chemistry, 30(11), 1995, pp. 823-838
Authors:
DEPAS M
VERMEIRE B
MERTENS PW
HEYNS MM
Citation: M. Depas et al., GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE, Microelectronic engineering, 28(1-4), 1995, pp. 125-128
Authors:
MEURIS M
MERTENS PW
OPDEBEECK A
SCHMIDT HF
DEPAS M
VEREECKE G
HEYNS MM
PHILIPOSSIAN A
Citation: M. Meuris et al., THE IMEC CLEAN - A NEW CONCEPT FOR PARTICLE AND METAL REMOVAL ON SI SURFACES, Solid state technology, 38(7), 1995, pp. 109
Authors:
DEPAS M
VERMEIRE B
MERTENS PW
VANMEIRHAEGHE RL
HEYNS MM
Citation: M. Depas et al., DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI SIO2/SI STRUCTURES/, Solid-state electronics, 38(8), 1995, pp. 1465-1471
Authors:
DEPAS M
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: M. Depas et al., ELECTRICAL CHARACTERISTICS OF AL SIO2/N-SI TUNNEL-DIODES WITH AN OXIDE LAYER GROWN BY RAPID THERMAL-OXIDATION/, Solid-state electronics, 37(3), 1994, pp. 433-441
Authors:
DEPAS M
VANMEIRHAEGHE RL
LAFLERE WH
CARDON F
Citation: M. Depas et al., TUNNEL OXIDES GROWN BY RAPID THERMAL-OXIDATION, Microelectronic engineering, 22(1-4), 1993, pp. 61-64
SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI SIO2 STRUCTURES BY IMPLANTED FLUORINE/
Authors:
AFANASEV VV
DEPAS M
DENIJS JMM
BALK P
Citation: Vv. Afanasev et al., SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI SIO2 STRUCTURES BY IMPLANTED FLUORINE/, Microelectronic engineering, 22(1-4), 1993, pp. 93-96
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