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Results: 1-25 |
Results: 25
CHARACTERIZATION OF MID-GAP STATES IN HVPE AND MOVPE-GROWN N-TYPE GAN
Authors: HACKE P OKUSHI H KURODA T DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: P. Hacke et al., CHARACTERIZATION OF MID-GAP STATES IN HVPE AND MOVPE-GROWN N-TYPE GAN, Journal of crystal growth, 190, 1998, pp. 541-545
THE EXCITONIC BANDGAP OF GAN - DEPENDENCE ON SUBSTRATE
Authors: MONEMAR B BERGMAN JP BUYANOVA IA AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: B. Monemar et al., THE EXCITONIC BANDGAP OF GAN - DEPENDENCE ON SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 239-241
DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN
Authors: HOFFMANN A ECKEY L MAXIM P HOLST JC HEITZ R HOFMANN DM KOVALEV D STEVDE G VOLM D MEYER BK DETCHPROHM T HIRAMATSU K AMANO H AKASAKI I
Citation: A. Hoffmann et al., DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN, Solid-state electronics, 41(2), 1997, pp. 275-278
A STUDY ON BARRIER HEIGHT OF AU-ALXGA1-XN SCHOTTKY DIODES IN THE RANGE LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.20
Authors: KHAN MRH NAKAYAMA H DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: Mrh. Khan et al., A STUDY ON BARRIER HEIGHT OF AU-ALXGA1-XN SCHOTTKY DIODES IN THE RANGE LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.20, Solid-state electronics, 41(2), 1997, pp. 287-294
PHOTOLUMINESCENCE AND OPTICAL GAIN IN HIGHLY EXCITED GAN
Authors: ECKEY L HOLST J HOFFMANN A BROSER I AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K
Citation: L. Eckey et al., PHOTOLUMINESCENCE AND OPTICAL GAIN IN HIGHLY EXCITED GAN, Journal of luminescence, 72-4, 1997, pp. 59-61
NEW DOPANT PRECURSORS FOR N-TYPE AND P-TYPE GAN
Authors: OHUCHI Y TADATOMO K NAKAYAMA H KANEDA N DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: Y. Ohuchi et al., NEW DOPANT PRECURSORS FOR N-TYPE AND P-TYPE GAN, Journal of crystal growth, 170(1-4), 1997, pp. 325-328
SI-DOPING IN GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING TETRAETHYLSILANE
Authors: KANEDA N DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: N. Kaneda et al., SI-DOPING IN GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING TETRAETHYLSILANE, JPN J A P 2, 35(4B), 1996, pp. 468-470
ELECTRICAL-TRANSPORT PROPERTIES OF P-GAN
Authors: NAKAYAMA H HACKE P KHAN MRH DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: H. Nakayama et al., ELECTRICAL-TRANSPORT PROPERTIES OF P-GAN, JPN J A P 2, 35(3A), 1996, pp. 282-284
EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS
Authors: VOLM D OETTINGER K STREIBL T KOVALEV D BENCHORIN M DIENER J MEYER BK MAJEWSKI J ECKEY L HOFFMANN A AMANO H AKASAKI I HIRAMATSU K DETCHPROHM T
Citation: D. Volm et al., EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16543-16550
SHALLOW DONORS IN GAN - A MAGNETIC DOUBLE-RESONANCE INVESTIGATION
Authors: DENNINGER G BEERHALTER R REISER D MAIER K SCHNEIDER J DETCHPROHM T HIRAMATSU K
Citation: G. Denninger et al., SHALLOW DONORS IN GAN - A MAGNETIC DOUBLE-RESONANCE INVESTIGATION, Solid state communications, 99(5), 1996, pp. 347-351
SPATIALLY-RESOLVED PHOTOLUMINESCENCE AND RAMAN-SCATTERING EXPERIMENTSON THE GAN SUBSTRATE INTERFACE
Authors: SIEGLE H THURIAN P ECKEY L HOFFMANN A THOMSEN C MEYER BK AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K
Citation: H. Siegle et al., SPATIALLY-RESOLVED PHOTOLUMINESCENCE AND RAMAN-SCATTERING EXPERIMENTSON THE GAN SUBSTRATE INTERFACE, Applied physics letters, 68(9), 1996, pp. 1265-1266
DEEP LEVELS IN THE UPPER BAND-GAP REGION OF LIGHTLY MG-DOPED GAN
Authors: HACKE P NAKAYAMA H DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: P. Hacke et al., DEEP LEVELS IN THE UPPER BAND-GAP REGION OF LIGHTLY MG-DOPED GAN, Applied physics letters, 68(10), 1996, pp. 1362-1364
SCHOTTKY-BARRIER ON N-TYPE AL0.14GA0.86N GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: KHAN MRH NAKAYAMA H DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: Mrh. Khan et al., SCHOTTKY-BARRIER ON N-TYPE AL0.14GA0.86N GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, JPN J A P 1, 34(12A), 1995, pp. 6375-6376
DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN
Authors: DRECHSLER M HOFMANN DM MEYER BK DETCHPROHM T AMANO H AKASAKI I
Citation: M. Drechsler et al., DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN, JPN J A P 2, 34(9B), 1995, pp. 1178-1179
MAGNETOOPTICAL, INVESTIGATION OF THE NEUTRAL DONOR BOUND EXCITON IN GAN
Authors: VOLM D STREIBL T MEYER BK DETCHPROHM T AMANO H AKASAKI I
Citation: D. Volm et al., MAGNETOOPTICAL, INVESTIGATION OF THE NEUTRAL DONOR BOUND EXCITON IN GAN, Solid state communications, 96(2), 1995, pp. 53-56
SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS
Authors: MEYER BK VOLM D GRABER A ALT HC DETCHPROHM T AMANO A AKASAKI I
Citation: Bk. Meyer et al., SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS, Solid state communications, 95(9), 1995, pp. 597-600
THE BARRIER HEIGHT AND INTERFACE EFFECT OF A AU-N-GAN SCHOTTKY DIODE
Authors: KHAN MRH DETCHPROHM T HACKE P HIRAMATSU K SAWAKI N
Citation: Mrh. Khan et al., THE BARRIER HEIGHT AND INTERFACE EFFECT OF A AU-N-GAN SCHOTTKY DIODE, Journal of physics. D, Applied physics, 28(6), 1995, pp. 1169-1174
PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN
Authors: BAUR J KAUFMANN U KUNZER M SCHNIEDER J AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K
Citation: J. Baur et al., PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN, Applied physics letters, 67(8), 1995, pp. 1140-1142
METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND CHARACTERISTICS OF MG-DOPED GAN USING GAN SUBSTRATES
Authors: DETCHPROHM T HIRAMATSU K SAWAKI N AKASAKI I
Citation: T. Detchprohm et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND CHARACTERISTICS OF MG-DOPED GAN USING GAN SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 192-196
THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES
Authors: DETCHPROHM T HIRAMATSU K SAWAKI N AKASAKI I
Citation: T. Detchprohm et al., THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES, Journal of crystal growth, 137(1-2), 1994, pp. 170-174
ANALYSIS OF DEEP LEVELS IN N-TYPE GAN BY TRANSIENT CAPACITANCE METHODS
Authors: HACKE P DETCHPROHM T HIRAMATSU K SAWAKI N TADATOMO K MIYAKE K
Citation: P. Hacke et al., ANALYSIS OF DEEP LEVELS IN N-TYPE GAN BY TRANSIENT CAPACITANCE METHODS, Journal of applied physics, 76(1), 1994, pp. 304-309
INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS
Authors: BAUR J MAIER K KUNZER M KAUFMANN U SCHNEIDER J AMANO H AKASAKI I DETCHPROHM T HIRAMATSU K
Citation: J. Baur et al., INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS, Applied physics letters, 64(7), 1994, pp. 857-859
RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY (VOL 32, PG 1528, 1993)
Authors: HIRAMATSU K DETCHPROHM T AKASAKI I
Citation: K. Hiramatsu et al., RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY (VOL 32, PG 1528, 1993), JPN J A P 1, 32(9A), 1993, pp. 4042-4042
RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY
Authors: HIRAMATSU K DETCHPROHM T AKASAKI I
Citation: K. Hiramatsu et al., RELAXATION MECHANISM OF THERMAL-STRESSES IN THE HETEROSTRUCTURE OF GAN GROWN ON SAPPHIRE BY VAPOR-PHASE EPITAXY, JPN J A P 1, 32(4), 1993, pp. 1528-1533
SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY
Authors: HACKE P DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: P. Hacke et al., SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY, Applied physics letters, 63(19), 1993, pp. 2676-2678
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