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Results: 1-24 |
Results: 24
CHARACTERIZATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY LOW-FREQUENCY NOISE MEASUREMENTS
Authors: DIMITRIADIS CA BRINI J KAMARINOS G GHIBAUDO G
Citation: Ca. Dimitriadis et al., CHARACTERIZATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY LOW-FREQUENCY NOISE MEASUREMENTS, JPN J A P 1, 37(1), 1998, pp. 72-77
LOW-FREQUENCY NOISE IN INTRINSIC LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYSILICON RESISTORS
Authors: DIMITRIADIS CA BRINI J KAMARINOS G
Citation: Ca. Dimitriadis et al., LOW-FREQUENCY NOISE IN INTRINSIC LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYSILICON RESISTORS, EPJ. Applied physics ( EPJ. Applied physics (Print)), 3(3), 1998, pp. 283-285
LOW-FREQUENCY NOISE IN SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
Authors: FARMAKIS FV BRINI J MATHIEU N KAMARINOS G DIMITRIADIS CA LOGOTHETIDIS S
Citation: Fv. Farmakis et al., LOW-FREQUENCY NOISE IN SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON, Semiconductor science and technology (Print), 13(11), 1998, pp. 1284-1289
THE MEYER-NELDEL RULE IN THE CONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTING FESI2 FILMS
Authors: TASSIS DH DIMITRIADIS CA VALASSIADES O
Citation: Dh. Tassis et al., THE MEYER-NELDEL RULE IN THE CONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTING FESI2 FILMS, Journal of applied physics, 84(5), 1998, pp. 2960-2962
CONDUCTION AND LOW-FREQUENCY NOISE IN HIGH-TEMPERATURE PROCESSED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA BRINI J KAMARINOS G GUEORGUIEV VK IVANOV TE
Citation: Ca. Dimitriadis et al., CONDUCTION AND LOW-FREQUENCY NOISE IN HIGH-TEMPERATURE PROCESSED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 83(3), 1998, pp. 1469-1475
SIMPLE PARAMETER EXTRACTION METHOD FOR NONIDEAL SCHOTTKY-BARRIER DIODES
Authors: LEE JI BRINI J DIMITRIADIS CA
Citation: Ji. Lee et al., SIMPLE PARAMETER EXTRACTION METHOD FOR NONIDEAL SCHOTTKY-BARRIER DIODES, Electronics Letters, 34(12), 1998, pp. 1268-1269
LOW-FREQUENCY NOISE IN BETA-FESI2 N-SI HETEROJUNCTIONS/
Authors: TASSIS DH DIMITRIADIS CA BRINI J KAMARINOS G ANGELAKERIS M FLEVARIS N
Citation: Dh. Tassis et al., LOW-FREQUENCY NOISE IN BETA-FESI2 N-SI HETEROJUNCTIONS/, Applied physics letters, 72(6), 1998, pp. 713-715
INFLUENCE OF CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING ON THE QUALITY OF POLYCRYSTALLINE BETA-FESI2 THIN-FILMS GROWN FROM VAPOR-DEPOSITED FE SI MULTILAYERS/
Authors: TASSIS DH DIMITRIADIS CA BOULTADAKIS S ARVANITIDIS J VES S KOKKOU S LOGOTHETIDIS S VALASSIADES O POULOPOULOS P FLEVARIS NK
Citation: Dh. Tassis et al., INFLUENCE OF CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING ON THE QUALITY OF POLYCRYSTALLINE BETA-FESI2 THIN-FILMS GROWN FROM VAPOR-DEPOSITED FE SI MULTILAYERS/, Thin solid films, 310(1-2), 1997, pp. 115-122
STUDY OF LEAKAGE CURRENT IN N-CHANNEL AND P-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY CONDUCTION AND LOW-FREQUENCY NOISE MEASUREMENTS
Authors: ANGELIS CT DIMITRIADIS CA SAMARAS I BRINI J KAMARINOS G GUEORGUIEV VK IVANOV TE
Citation: Ct. Angelis et al., STUDY OF LEAKAGE CURRENT IN N-CHANNEL AND P-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY CONDUCTION AND LOW-FREQUENCY NOISE MEASUREMENTS, Journal of applied physics, 82(8), 1997, pp. 4095-4101
GRAIN-BOUNDARY POTENTIAL BARRIER INHOMOGENEITIES IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA
Citation: Ca. Dimitriadis, GRAIN-BOUNDARY POTENTIAL BARRIER INHOMOGENEITIES IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1563-1565
LOW-FREQUENCY NOISE OF THE LEAKAGE CURRENT IN UNDOPED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA BRINI J KAMARINOS G
Citation: Ca. Dimitriadis et al., LOW-FREQUENCY NOISE OF THE LEAKAGE CURRENT IN UNDOPED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 70(7), 1997, pp. 880-882
OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-QUALITY BETA-FESI2 THIN-FILMS GROWN BY SOLID-PHASE EPITAXY
Authors: TASSIS DH MITSAS CL ZORBA TT ANGELAKERIS M DIMITRIADIS CA VALASSIADES O SIAPKAS DI KIRIAKIDIS G
Citation: Dh. Tassis et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-QUALITY BETA-FESI2 THIN-FILMS GROWN BY SOLID-PHASE EPITAXY, Applied surface science, 102, 1996, pp. 178-183
INFRARED SPECTROSCOPIC AND ELECTRONIC TRANSPORT-PROPERTIES OF POLYCRYSTALLINE SEMICONDUCTING FESI2 THIN-FILMS
Authors: TASSIS DH MITSAS CL ZORBA TT DIMITRIADIS CA VALASSIADES O SIAPKAS DI ANGELAKERIS M POULOPOULOS P FLEVARIS NK KIRIAKIDIS G
Citation: Dh. Tassis et al., INFRARED SPECTROSCOPIC AND ELECTRONIC TRANSPORT-PROPERTIES OF POLYCRYSTALLINE SEMICONDUCTING FESI2 THIN-FILMS, Journal of applied physics, 80(2), 1996, pp. 962-968
ON THE THRESHOLD VOLTAGE AND CHANNEL CONDUCTANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA TASSIS DH
Citation: Ca. Dimitriadis et Dh. Tassis, ON THE THRESHOLD VOLTAGE AND CHANNEL CONDUCTANCE OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 79(8), 1996, pp. 4431-4437
OUTPUT CHARACTERISTICS OF SHORT-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA TASSIS DH
Citation: Ca. Dimitriadis et Dh. Tassis, OUTPUT CHARACTERISTICS OF SHORT-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 77(5), 1995, pp. 2177-2183
LEAKAGE CURRENT OF UNDOPED LPCVD POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA COXON PA ECONOMOU NA
Citation: Ca. Dimitriadis et al., LEAKAGE CURRENT OF UNDOPED LPCVD POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 950-956
SUBTHRESHOLD SLOPE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AND EFFECT OF THE GATE OXIDE ON THE SUBTHRESHOLD CHARACTERISTICS
Authors: DIMITRIADIS CA
Citation: Ca. Dimitriadis, SUBTHRESHOLD SLOPE IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AND EFFECT OF THE GATE OXIDE ON THE SUBTHRESHOLD CHARACTERISTICS, Applied physics letters, 67(25), 1995, pp. 3738-3740
SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
Authors: DIMITRIADIS CA LOGOTHETIDIS S ALEXANDROU I
Citation: Ca. Dimitriadis et al., SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON, Applied physics letters, 66(4), 1995, pp. 502-504
INFLUENCE OF DEPOSITION PRESSURE ON THE BULK AND INTERFACE STATES IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA TASSIS DH ECONOMOU NA GIAKOUMAKIS G
Citation: Ca. Dimitriadis et al., INFLUENCE OF DEPOSITION PRESSURE ON THE BULK AND INTERFACE STATES IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 64(20), 1994, pp. 2709-2711
DEEP LEVELS IN BETA-FESI2 N-SI HETEROJUNCTIONS/
Authors: EVANGELOU EK GIAKOUMAKIS GE DIMITRIADIS CA
Citation: Ek. Evangelou et al., DEEP LEVELS IN BETA-FESI2 N-SI HETEROJUNCTIONS/, Solid state communications, 86(5), 1993, pp. 309-312
DETERMINATION OF BULK STATES AND INTERFACE STATES DISTRIBUTIONS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA TASSIS DH ECONOMOU NA LOWE AJ
Citation: Ca. Dimitriadis et al., DETERMINATION OF BULK STATES AND INTERFACE STATES DISTRIBUTIONS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Journal of applied physics, 74(4), 1993, pp. 2919-2919
GRAIN-BOUNDARY TRAP DISTRIBUTION IN POLYCRYSTALLINE SILICON THIN-FILMTRANSISTORS
Authors: DIMITRIADIS CA
Citation: Ca. Dimitriadis, GRAIN-BOUNDARY TRAP DISTRIBUTION IN POLYCRYSTALLINE SILICON THIN-FILMTRANSISTORS, Journal of applied physics, 73(8), 1993, pp. 4086-4088
EFFECT OF PRESSURE ON THE GROWTH OF CRYSTALLITES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS AND THE EFFECTIVE ELECTRON-MOBILITY UNDER HIGH NORMAL FIELD IN THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA STOEMENOS J COXON PA FRILIGKOS S ANTONOPOULOS J ECONOMOU NA
Citation: Ca. Dimitriadis et al., EFFECT OF PRESSURE ON THE GROWTH OF CRYSTALLITES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS AND THE EFFECTIVE ELECTRON-MOBILITY UNDER HIGH NORMAL FIELD IN THIN-FILM TRANSISTORS, Journal of applied physics, 73(12), 1993, pp. 8402-8411
INFLUENCE OF DEPOSITION PRESSURE ON THE OUTPUT CHARACTERISTICS OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: DIMITRIADIS CA COXON PA ECONOMOU NA
Citation: Ca. Dimitriadis et al., INFLUENCE OF DEPOSITION PRESSURE ON THE OUTPUT CHARACTERISTICS OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 63(7), 1993, pp. 943-945
Risultati: 1-24 |