Authors:
BASSER RL
TO LB
BEGLEY CG
MAHER D
JUTTNER C
CEBON J
MANSFIELD R
OLVER I
DUGGAN G
SZER J
COLLINS J
SCHWARTZ B
MARTY J
MENCHACA D
SHERIDAN WP
FOX RM
GREEN MD
Citation: Rl. Basser et al., RAPID HEMATOPOIETIC RECOVERY AFTER MULTICYCLE HIGH-DOSE CHEMOTHERAPY - ENHANCEMENT OF FILGRASTIM-INDUCED PROGENITOR-CELL MOBILIZATION BY RECOMBINANT HUMAN STEM-CELL FACTOR, Journal of clinical oncology, 16(5), 1998, pp. 1899-1908
Citation: Sp. Najda et al., ELECTRICAL-PROPERTIES OF SILICON AND BERYLLIUM DOPED (ALYGA1-Y)(0.52)IN0.48P, Journal of applied physics, 82(9), 1997, pp. 4408-4411
Authors:
KINDER D
WONG SL
PRIEST AN
NICHOLAS RJ
DUGGAN G
DAWSON MD
NAJDA SP
KEAN AH
Citation: D. Kinder et al., MAGNETOOPTICAL STUDIES OF COMPRESSIVELY STRAINED GAINP ALGAINP MULTIPLE-QUANTUM WELLS/, Solid-state electronics, 40(1-8), 1996, pp. 597-600
Authors:
TERAGUCHI N
MOURI H
TOMOMURA Y
SUZUKI A
RORISON J
DUGGAN G
Citation: N. Teraguchi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF NEW CARRIER BARRIER LAYER STRUCTURE OF II-VI COMPOUNDS, Journal of crystal growth, 159(1-4), 1996, pp. 493-497
Citation: Sp. Najda et al., BIAS AND TEMPERATURE-DEPENDENT PHOTOCURRENT SPECTROSCOPY OF A COMPRESSIVELY STRAINED GAINP ALGAINP SINGLE-QUANTUM-WELL/, Semiconductor science and technology, 10(4), 1995, pp. 433-436
Authors:
VERSCHUREN CA
BESTWICK TD
DAWSON MD
KEAN AH
DUGGAN G
Citation: Ca. Verschuren et al., OBSERVATION OF BOTH HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN (25-60)-NM DIAMETER GAAS-(AL,GA)AS QUANTUM DOTS, Physical review. B, Condensed matter, 52(12), 1995, pp. 8640-8642
Authors:
HOOPER SE
FOXON CT
CHENG TS
JENKINS LC
LACKLISON DE
ORTON JW
BESTWICK T
KEAN A
DAWSON M
DUGGAN G
Citation: Se. Hooper et al., SOME ASPECTS OF GAN GROWTH ON GAAS(100) SUBSTRATES USING MOLECULAR-BEAM EPITAXY WITH AN RF ACTIVATED NITROGEN-PLASMA SOURCE, Journal of crystal growth, 155(3-4), 1995, pp. 157-163
Citation: Sp. Najda et al., OPTICAL MEASUREMENTS OF ELECTRONIC BAND-STRUCTURE IN ALGAINP ALLOYS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(7), 1995, pp. 3412-3415
Authors:
TERAGUCHI N
MOURI H
TOMOMURA Y
TANIGUCHI H
RORISON J
DUGGAN G
Citation: N. Teraguchi et al., GROWTH OF ZNSE MGS STRAINED-LAYER SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(20), 1995, pp. 2945-2947
Authors:
BASSER RL
SOBOL MM
DUGGAN G
CEBON J
ROSENTHAL MA
MIHALY G
GREEN MD
Citation: Rl. Basser et al., COMPARATIVE-STUDY OF THE PHARMACOKINETICS AND TOXICITY OF HIGH-DOSE EPIRUBICIN WITH OR WITHOUT DEXRAZOXANE IN PATIENTS WITH ADVANCED MALIGNANCY, Journal of clinical oncology, 12(8), 1994, pp. 1659-1666
Authors:
DAWSON MD
NAJDA SP
KEAN AH
DUGGAN G
MOWBRAY DJ
KOWALSKI OP
SKOLNICK MS
HOPKINSON M
Citation: Md. Dawson et al., MEASUREMENT OF THE DIRECT ENERGY-GAP OF AL0.5IN0.5P - IMPLICATIONS FOR THE BAND DISCONTINUITY AT GA1-XINXP ALYIN1-YP HETEROJUNCTIONS/, Physical review. B, Condensed matter, 50(15), 1994, pp. 11190-11191
Authors:
DAWSON MD
NAJDA SP
KEAN AH
DUGGAN G
MOWBRAY DJ
KOWALSKI OP
SKOLNICK MS
HOPKINSON M
Citation: Md. Dawson et al., MEASUREMENT OF THE DIRECT ENERGY-GAP OF AL0.5IN0.5P - IMPLICATIONS FOR THE BAND DISCONTINUITY AT GA1-XINXP ALYIN1-YP HETEROJUNCTIONS/, Physical review. B, Condensed matter, 50(15), 1994, pp. 11190-11191
Citation: Md. Dawson et G. Duggan, BAND-OFFSET DETERMINATION FOR GAINP-ALGAINP STRUCTURES WITH COMPRESSIVELY STRAINED-QUANTUM-WELL ACTIVE LAYERS, Applied physics letters, 64(7), 1994, pp. 892-894
Citation: Md. Dawson et G. Duggan, EXCITON LOCALIZATION EFFECTS AND HETEROJUNCTION BAND OFFSET IN (GA,IN)P-(AL,GA,IN)P MULTIPLE-QUANTUM WELLS, Physical review. B, Condensed matter, 47(19), 1993, pp. 12598-12604
Authors:
BASSER R
TO B
GREEN M
SZER J
BAYLY J
DUGGAN G
BEGLEY G
DYSON P
FOX R
COLLINS J
RUSSELL I
MAHER D
CEBON J
MARTY J
JUTTNER C
DZIEM G
HOFFMAN E
SHERIDAN W
Citation: R. Basser et al., RAPID HEMATOPOIETIC RECONSTITUTION FOLLOWING 3 CYCLES OF HIGH-DOSE CHEMOTHERAPY WITH FILGRASTIM (G-CSF)-MOBILIZED PERIPHERAL-BLOOD PROGENITOR CELLS (PBPC) AND FILGRASTIM IN PATIENTS WITH HIGH-RISK BREAST-CANCER, Blood, 82(10), 1993, pp. 10000233-10000233