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Results: 1-24 |
Results: 24
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
Authors: Fry, PW Mowbray, DJ Itskevich, IE Skolnick, MS Barker, JA O'Reilly, EP Hopkinson, M Al-Khafaji, M David, JPR Cullis, AG Hill, G
Citation: Pw. Fry et al., Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, PHYS ST S-B, 224(2), 2001, pp. 497-502
Treatment of soft threshold in impact ionization
Authors: Tan, CH David, JPR Rees, GJ Tozer, RC Herbert, DC
Citation: Ch. Tan et al., Treatment of soft threshold in impact ionization, J APPL PHYS, 90(5), 2001, pp. 2538-2543
Fokker-Planck model for nonlocal impact ionization in semiconductors
Authors: Jacob, B Robson, PN David, JPR Rees, GJ
Citation: B. Jacob et al., Fokker-Planck model for nonlocal impact ionization in semiconductors, J APPL PHYS, 90(3), 2001, pp. 1314-1317
Impact ionization probabilities as functions of two-dimensional space and time
Authors: Plimmer, SA David, JPR Jacob, B Rees, GJ
Citation: Sa. Plimmer et al., Impact ionization probabilities as functions of two-dimensional space and time, J APPL PHYS, 89(5), 2001, pp. 2742-2751
Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes
Authors: Tan, CH David, JPR Plimmer, SA Rees, GJ Tozer, RC Grey, R
Citation: Ch. Tan et al., Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes, IEEE DEVICE, 48(7), 2001, pp. 1310-1317
Avalanche multiplication characteristics of Al0.8Ga0.2As diodes
Authors: Ng, BK David, JPR Plimmer, SA Rees, GJ Tozer, RC Hopkinson, M Hill, G
Citation: Bk. Ng et al., Avalanche multiplication characteristics of Al0.8Ga0.2As diodes, IEEE DEVICE, 48(10), 2001, pp. 2198-2204
Ionization coefficients in AlxGa1-xAs (x=0-0.60)
Authors: Plimmer, SA David, JPR Rees, GJ Robson, PN
Citation: Sa. Plimmer et al., Ionization coefficients in AlxGa1-xAs (x=0-0.60), SEMIC SCI T, 15(7), 2000, pp. 692-699
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
Authors: Fry, PW Itskevich, IE Mowbray, DJ Skolnick, MS Finley, JJ Barker, JA O'Reilly, EP Wilson, LR Larkin, IA Maksym, PA Hopkinson, M Al-Khafaji, M David, JPR Cullis, AG Hill, G Clark, JC
Citation: Pw. Fry et al., Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots, PHYS REV L, 84(4), 2000, pp. 733-736
Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures
Authors: Chia, CK David, JPR Plimmer, SA Rees, GJ Grey, R Robson, PN
Citation: Ck. Chia et al., Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures, J APPL PHYS, 88(5), 2000, pp. 2601-2608
Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes
Authors: Ong, DS Li, KF Plimmer, SA Rees, GJ David, JPR Robson, PN
Citation: Ds. Ong et al., Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes, J APPL PHYS, 87(11), 2000, pp. 7885-7891
Avalanche noise characteristics of thin GaAs structures with distributed carrier generation
Authors: Li, KF Ong, DS David, JPR Tozer, RC Rees, GJ Plimmer, SA Chang, KY Roberts, JS
Citation: Kf. Li et al., Avalanche noise characteristics of thin GaAs structures with distributed carrier generation, IEEE DEVICE, 47(5), 2000, pp. 910-914
The merits and limitations of local impact ionization theory
Authors: Plimmer, SA David, JPR Ong, DS
Citation: Sa. Plimmer et al., The merits and limitations of local impact ionization theory, IEEE DEVICE, 47(5), 2000, pp. 1080-1088
Avalanche multiplication in AlxGa1-xAs (x=0to0.60)
Authors: Plimmer, SA David, JPR Grey, R Rees, GJ
Citation: Sa. Plimmer et al., Avalanche multiplication in AlxGa1-xAs (x=0to0.60), IEEE DEVICE, 47(5), 2000, pp. 1089-1097
Impact ionization coefficients of Al0.8Ga0.2As
Authors: Ng, BK David, JPR Plimmer, SA Hopkinson, M Tozer, RC Rees, GJ
Citation: Bk. Ng et al., Impact ionization coefficients of Al0.8Ga0.2As, APPL PHYS L, 77(26), 2000, pp. 4374-4376
Avalanche noise measurement in thin Si p(+)-i-n(+) diodes
Authors: Tan, CH Clark, JC David, JPR Rees, GJ Plimmer, SA Tozer, RC Herbert, DC Robbins, DJ Leong, WY Newey, J
Citation: Ch. Tan et al., Avalanche noise measurement in thin Si p(+)-i-n(+) diodes, APPL PHYS L, 76(26), 2000, pp. 3926-3928
Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors
Authors: Li, KF Ong, DS David, JPR Tozer, RC Rees, GJ Robson, PN Grey, R
Citation: Kf. Li et al., Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors, IEE P-OPTO, 146(1), 1999, pp. 21-24
Piezoelectric InGaAs AlGaAs laser with intracavity absorber
Authors: Khoo, EA Pabla, AS Woodhead, J David, JPR Grey, R Rees, GJ
Citation: Ea. Khoo et al., Piezoelectric InGaAs AlGaAs laser with intracavity absorber, IEE P-OPTO, 146(1), 1999, pp. 62-66
Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication
Authors: Li, KF Plimmer, SA David, JPR Tozer, RC Rees, GJ Robson, PN Button, CC Clark, JC
Citation: Kf. Li et al., Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication, IEEE PHOTON, 11(3), 1999, pp. 364-366
Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes
Authors: Dunn, GM Ghin, R Rees, GJ David, JPR Plimmer, S Herbert, DC
Citation: Gm. Dunn et al., Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes, SEMIC SCI T, 14(11), 1999, pp. 994-1000
A simple model for avalanche multiplication including deadspace effects
Authors: Plimmer, SA David, JPR Ong, DS Li, KF
Citation: Sa. Plimmer et al., A simple model for avalanche multiplication including deadspace effects, IEEE DEVICE, 46(4), 1999, pp. 769-775
Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber
Authors: Khoo, EA Woodhead, J David, JPR Grey, R Rees, GJ
Citation: Ea. Khoo et al., Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber, ELECTR LETT, 35(2), 1999, pp. 150-152
The effect of an electric-field gradient on avalanche noise
Authors: Plimmer, SA Tan, CH David, JPR Grey, R Li, KF Rees, GJ
Citation: Sa. Plimmer et al., The effect of an electric-field gradient on avalanche noise, APPL PHYS L, 75(19), 1999, pp. 2963-2965
Photoluminescence linewidths of piezoelectric quantum wells
Authors: Khoo, EA David, JPR Woodhead, J Grey, R Rees, GJ
Citation: Ea. Khoo et al., Photoluminescence linewidths of piezoelectric quantum wells, APPL PHYS L, 75(13), 1999, pp. 1929-1931
The influence of trimethylindium impurities on the performance of InAlGaAssingle quantum well lasers
Authors: Roberts, JS David, JPR Smith, L Tihanyi, PL
Citation: Js. Roberts et al., The influence of trimethylindium impurities on the performance of InAlGaAssingle quantum well lasers, J CRYST GR, 195(1-4), 1998, pp. 668-675
Risultati: 1-24 |