Citation: M. Sanden et al., Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors, IEEE ELEC D, 22(5), 2001, pp. 242-244
Citation: Yg. Xiao et Mj. Deen, Frequency response and modeling of resonant-cavity separate absorption, charge, and multiplication avalanche photodiodes, J LIGHTW T, 19(7), 2001, pp. 1010-1022
Citation: Ch. Chen et Mj. Deen, A general noise and S-parameter deembedding procedure for on-wafer high-frequency noise measurements of MOSFETs, IEEE MICR T, 49(5), 2001, pp. 1004-1005
Citation: Yg. Xiao et Mj. Deen, Temperature dependent studies of InP/InGaAs avalanche photodiodes based ontime domain modeling, IEEE DEVICE, 48(4), 2001, pp. 661-670
Citation: Mj. Deen et Fj. De La Hidalga-w, Circuits and applications, DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS, 2001, pp. 189-262
Citation: Ygg. Xiao et Mj. Deen, Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach, J VAC SCI A, 18(2), 2000, pp. 610-614
Citation: Ch. Chen et Mj. Deen, Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters, J VAC SCI A, 18(2), 2000, pp. 757-760
Citation: Ws. Kwan et al., Hot-carrier effects on radio frequency noise characteristics of LDD n-typemetal-oxide-semiconductor field effect transistors, J VAC SCI A, 18(2), 2000, pp. 765-769
Citation: Mj. Deen et S. Rumyantsev, Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors, MICROEL REL, 40(11), 2000, pp. 1855-1861
Citation: Xy. Chen et al., Low-frequency electrical noise of high-speed, high-performance 1.3 mu m strained multiquantum well gain-coupled distributed feedback lasers, J APPL PHYS, 88(11), 2000, pp. 6746-6751
Authors:
Kolev, P
Deen, MJ
Liu, HC
Li, JM
Buchanan, M
Wasilewski, ZR
Citation: P. Kolev et al., Asymmetry in the dark current low frequency noise characteristics of B-B and B-C quantum well infrared photodetectors from 10 to 80 K, J APPL PHYS, 87(5), 2000, pp. 2400-2407
Citation: Fj. De La Hidalga et al., Theoretical and experimental characterization of self-heating in silicon integrated devices operating at low temperatures, IEEE DEVICE, 47(5), 2000, pp. 1098-1106
Citation: S. An et Mj. Deen, Low-frequency noise in single growth planar separate absorption, grading, charge, and multiplication avalanche photodiodes, IEEE DEVICE, 47(3), 2000, pp. 537-543
Citation: Nr. Das et al., A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 mu m, IEEE DEVICE, 47(11), 2000, pp. 2101-2109
Citation: Ma. Margarit et al., A low-noise, low-power VCO with automatic amplitude control for wireless applications, IEEE J SOLI, 34(6), 1999, pp. 761-771
Authors:
An, S
Deen, MJ
Vetter, AS
Clark, WR
Noel, JP
Shepherd, FR
Citation: S. An et al., Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes, IEEE J Q EL, 35(8), 1999, pp. 1196-1202