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Results: 1-25/27
Authors:
MUSA I
ECCLESTON W
Citation: I. Musa et W. Eccleston, PROPERTIES OF REGIOREGULAR POLY(3-ALKYLTHIOPHENE) SCHOTTKY DIODES, JPN J A P 1, 37(8), 1998, pp. 4288-4293
Authors:
MUSA I
ECCLESTON W
Citation: I. Musa et W. Eccleston, DETERMINATION OF THE OPTICAL-CONSTANTS OF THIN-FILMS OF REGIOREGULAR POLY(3-ALKYLTHIOPHENE) ON TRANSPARENT SUBSTRATES, Synthetic metals, 97(1), 1998, pp. 69-72
Authors:
MUSA I
MUNINDRASDASA DAI
AMARATUNGA GAJ
ECCLESTON W
Citation: I. Musa et al., ULTRA-LOW-THRESHOLD FIELD-EMISSION FROM CONJUGATED POLYMERS, Nature, 395(6700), 1998, pp. 362-365
Authors:
ECCLESTON W
Citation: W. Eccleston, QUASIDRIFT LIMITED FIELD-EFFECT CURRENT IN POLYCRYSTALLINE SILICON - WIDE GRAIN-BOUNDARY APPROXIMATION, Journal of applied physics, 84(3), 1998, pp. 1697-1702
Authors:
MUSA I
ECCLESTON W
HIGGINS SJ
Citation: I. Musa et al., FURTHER ANALYSIS OF SPACE-CHARGE-LIMITED CURRENTS IN POLYBENZO[C]THIOPHENE FILMS, Journal of applied physics, 83(10), 1998, pp. 5558-5560
Authors:
ZHANG JF
ECCLESTON W
Citation: Jf. Zhang et W. Eccleston, POSITIVE BIAS TEMPERATURE INSTABILITY IN MOSFETS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 116-124
Authors:
GRIFFIN N
PAUL DJ
PEPPER M
TAYLOR S
SMITH JP
ECCLESTON W
FERNANDEZ JM
JOYCE BA
Citation: N. Griffin et al., GATING HIGH-MOBILITY SILICON-GERMANIUM HETEROSTRUCTURES, Microelectronic engineering, 35(1-4), 1997, pp. 309-312
Authors:
MUSA I
HIGGINS SJ
ECCLESTON W
Citation: I. Musa et al., SPACE-CHARGE LIMITED CONDUCTION PROCESSES IN POLYBENZO[C]THIOPHENE FILMS, Journal of applied physics, 81(5), 1997, pp. 2288-2290
Authors:
CHAPPEL DC
SMITH JP
TAYLOR S
ECCLESTON W
DAS MK
COOPER JA
MELLOCH MR
Citation: Dc. Chappel et al., HIGH-FREQUENCY CV-CHARACTERISTICS OF PLASMA OXIDIZED SILICON-CARBIDE, Electronics Letters, 33(1), 1997, pp. 97-98
Authors:
CLOUGH FJ
NARAYANAN EMS
CHEN Y
ECCLESTON W
MILNE WI
Citation: Fj. Clough et al., POLYCRYSTALLINE SILICON THIN-FILM-TRANSISTOR INCORPORATING A SEMIINSULATING FIELD PLATE FOR HIGH-VOLTAGE CIRCUITRY ON GLASS, Applied physics letters, 71(14), 1997, pp. 2002-2004
Authors:
JOHNSON DE
MARSLAND JS
ECCLESTON W
Citation: De. Johnson et al., NEURAL-NETWORK IMPLEMENTATION USING A SINGLE MOST PER SYNAPSE, IEEE transactions on neural networks, 6(4), 1995, pp. 1008-1011
Authors:
GOH IS
ZHANG JF
HALL S
ECCLESTON W
WERNER K
Citation: Is. Goh et al., ELECTRICAL-PROPERTIES OF PLASMA-GROWN OXIDE ON MBE-GROWN SIGE, Semiconductor science and technology, 10(6), 1995, pp. 818-828
Authors:
KENNEDY GP
TAYLOR S
ECCLESTON W
ARNOLDBIK WM
HABRAKEN FHPM
Citation: Gp. Kennedy et al., PHYSICAL AND ELECTRICAL CHARACTERIZATION OF OXYNITRIDE FILMS PRODUCEDBY PLASMA OXIDATION OF DEPOSITED SILICON-NITRIDE LAYERS, Microelectronic engineering, 28(1-4), 1995, pp. 141-144
Authors:
GOH IS
ZHANG JF
HALL S
ECCLESTON W
WERNER K
Citation: Is. Goh et al., PLASMA OXIDATION OF SI AND SIGE, Microelectronic engineering, 28(1-4), 1995, pp. 221-224
Authors:
ZHANG JF
ECCLESTON W
Citation: Jf. Zhang et W. Eccleston, EFFECTS OF HIGH-FIELD INJECTION ON THE HOT-CARRIER-INDUCED DEGRADATION OF SUBMICROMETER PMOSFETS, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1269-1276
Authors:
YUAN XJ
MARSLAND JS
ECCLESTON W
BOUVET D
MI J
DUTOIT M
Citation: Xj. Yuan et al., CHARGE TRAPPING AND INTERFACE STATE GENERATION IN RAPID THERMAL PROCESSED OXIDE AND NITRIDED-OXIDE MOS CAPACITORS BY ELECTRON PHOTOINJECTION FROM AL GATE AND SI SUBSTRATE, Journal of the Electrochemical Society, 142(3), 1995, pp. 1021-1024
Authors:
KENNEDY GP
TAYLOR S
ECCLESTON W
UREN MJ
Citation: Gp. Kennedy et al., PLASMA-GROWN OXIDES ON SILICON WITH EXTREMELY LOW INTERFACE STATE DENSITIES, Microelectronics, 25(7), 1994, pp. 485-489
Authors:
GOH IS
HALL S
ECCLESTON W
ZHANG JF
WERNER K
Citation: Is. Goh et al., INTERFACE QUALITY OF SIGE OXIDE PREPARED BY RF PLASMA ANODIZATION, Electronics Letters, 30(23), 1994, pp. 1988-1989
Authors:
YUAN XJ
MARSLAND JS
ECCLESTON W
BOUVET D
MI J
DUTOIT M
Citation: Xj. Yuan et al., CHARGE TRAPPING AND POLARITY DEPENDENCE OF INTERFACE STATE GENERATIONIN NITRIDED-OXIDE GATE DIELECTRIC BY ELECTRON PHOTOINJECTION, Electronics Letters, 30(14), 1994, pp. 1180-1181
Authors:
TAYLOR S
ZHANG JF
ECCLESTON W
Citation: S. Taylor et al., A REVIEW OF THE PLASMA OXIDATION OF SILICON AND ITS APPLICATIONS, Semiconductor science and technology, 8(7), 1993, pp. 1426-1433
Authors:
YUAN XJ
MARSLAND JS
ECCLESTON W
Citation: Xj. Yuan et al., SUBSTRATE HOT-ELECTRON INJECTION MODELING BASED ON LUCKY DRIFT THEORY, Microelectronic engineering, 22(1-4), 1993, pp. 261-264
Authors:
ZHAO SP
TAYLOR S
ECCLESTON W
BARLOW KJ
Citation: Sp. Zhao et al., OXIDE DEGRADATION STUDY DURING SUBSTRATE HOT-ELECTRON INJECTION, Microelectronic engineering, 22(1-4), 1993, pp. 269-272
Authors:
ECCLESTON W
HALL S
Citation: W. Eccleston et S. Hall, TYPICAL EFFECTS IN SOI MOSFETS AND RELATED ELECTRICAL AND THERMAL CHARACTERIZATION, Microelectronic engineering, 22(1-4), 1993, pp. 331-338
Authors:
WU ZY
HALL S
ECCLESTON W
KEEN JM
Citation: Zy. Wu et al., ELECTRICAL CHARACTERIZATION OF OXIDIZED POROUS SILICON, Microelectronic engineering, 22(1-4), 1993, pp. 359-362
A STUDY OF HIGH-FIELD CONDUCTION AND ELECTRON TRAPPING IN BURIED OXIDES PRODUCED BY SIMOX TECHNOLOGY
Authors:
WAINWRIGHT SP
NGWA C
HALL S
ECCLESTON W
Citation: Sp. Wainwright et al., A STUDY OF HIGH-FIELD CONDUCTION AND ELECTRON TRAPPING IN BURIED OXIDES PRODUCED BY SIMOX TECHNOLOGY, Microelectronic engineering, 22(1-4), 1993, pp. 399-402