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Results: 1-25 | 26-27
Results: 1-25/27
PULSED-LASER VALIDATION OF RECOVERY MECHANISMS OF CRITICAL SEES IN ANARTIFICIAL NEURAL-NETWORK SYSTEM
Authors: BUCHNER S OLMOS M CHEYNET P VELAZCO R MCMORROW D MELINGER J ECOFFET R MULLER JD
Citation: S. Buchner et al., PULSED-LASER VALIDATION OF RECOVERY MECHANISMS OF CRITICAL SEES IN ANARTIFICIAL NEURAL-NETWORK SYSTEM, IEEE transactions on nuclear science, 45(3), 1998, pp. 1501-1507
SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY
Authors: DETCHEVERRY C ECOFFET R DUZELLIER S LORFEVRE E BRUGUIER G BARAK J LIFSHITZ Y PALAU JM GASIOT J
Citation: C. Detcheverry et al., SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY, IEEE transactions on nuclear science, 45(3), 1998, pp. 1612-1616
SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION
Authors: LORFEVRE E SUDRE C DACHS C DETCHEVERRY C PALAU JM GASIOT J CALVET MC GARNIER J ECOFFET R
Citation: E. Lorfevre et al., SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1624-1627
EXPERIMENTAL-DETERMINATION OF THE FREQUENCY FACTOR OF THERMAL ANNEALING PROCESSES IN METAL-OXIDE-SEMICONDUCTOR GATE-OXIDE STRUCTURES
Authors: SAIGNE F DUSSEAU L ALBERT L FESQUET J GASIOT J DAVID JP ECOFFET R SCHRIMPF RD GALLOWAY KF
Citation: F. Saigne et al., EXPERIMENTAL-DETERMINATION OF THE FREQUENCY FACTOR OF THERMAL ANNEALING PROCESSES IN METAL-OXIDE-SEMICONDUCTOR GATE-OXIDE STRUCTURES, Journal of applied physics, 82(8), 1997, pp. 4102-4107
PREDICTION OF LOW DOSE-RATE EFFECTS IN POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON ISOCHRONAL ANNEALING MEASUREMENTS
Authors: DUSSEAU L RANDOLPH TL SCHRIMPF RD GALLOWAY KF SAIGNE F FESQUET J GASIOT J ECOFFET R
Citation: L. Dusseau et al., PREDICTION OF LOW DOSE-RATE EFFECTS IN POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON ISOCHRONAL ANNEALING MEASUREMENTS, Journal of applied physics, 81(5), 1997, pp. 2437-2441
LOW LET CROSS-SECTION MEASUREMENTS USING HIGH-ENERGY CARBON BEAM
Authors: ECOFFET R DUZELLIER S FALGUERE D GUIBERT L INGUIMBERT C
Citation: R. Ecoffet et al., LOW LET CROSS-SECTION MEASUREMENTS USING HIGH-ENERGY CARBON BEAM, IEEE transactions on nuclear science, 44(6), 1997, pp. 2230-2236
PROTON UPSET RATE SIMULATION BY A MONTE-CARLO METHOD - IMPORTANCE OF THE ELASTIC-SCATTERING MECHANISM
Authors: INGUIMBERT C DUZELLIER S ECOFFET R BOURRIEAU J
Citation: C. Inguimbert et al., PROTON UPSET RATE SIMULATION BY A MONTE-CARLO METHOD - IMPORTANCE OF THE ELASTIC-SCATTERING MECHANISM, IEEE transactions on nuclear science, 44(6), 1997, pp. 2243-2249
SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY
Authors: DETCHEVERRY C DACHS C LORFEVRE E SUDRE C BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation: C. Detcheverry et al., SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY, IEEE transactions on nuclear science, 44(6), 1997, pp. 2266-2273
LOW-ENERGY PROTON-INDUCED SEE IN MEMORIES
Authors: DUZELLIER S ECOFFET R FALGUERE D NUNS T GUIBERT L HAJDAS W CALVET MC
Citation: S. Duzellier et al., LOW-ENERGY PROTON-INDUCED SEE IN MEMORIES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2306-2310
SPACE SEE RISK ASSESSMENT FOR A COMMERCIAL DIGITAL TV RECEIVER
Authors: ECOFFET R SARTHOU M LABRUNEE M GASC L DUBREUIL A
Citation: R. Ecoffet et al., SPACE SEE RISK ASSESSMENT FOR A COMMERCIAL DIGITAL TV RECEIVER, IEEE transactions on nuclear science, 44(6), 1997, pp. 2333-2336
ARTIFICIAL NEURAL-NETWORK ROBUSTNESS FOR ON-BOARD SATELLITE IMAGE-PROCESSING - RESULTS OF UPSET SIMULATIONS AND GROUND TESTS
Authors: VELAZCO R CHEYNET P MULLER JD ECOFFET R BUCHNER S
Citation: R. Velazco et al., ARTIFICIAL NEURAL-NETWORK ROBUSTNESS FOR ON-BOARD SATELLITE IMAGE-PROCESSING - RESULTS OF UPSET SIMULATIONS AND GROUND TESTS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2337-2344
HEAVY-ION-INDUCED FAILURES IN A POWER IGBT
Authors: LORFEVRE E DACHS C DETCHEVERRY C PALAU JM GASIOT J ROUBAUD F CALVET MC ECOFFET R
Citation: E. Lorfevre et al., HEAVY-ION-INDUCED FAILURES IN A POWER IGBT, IEEE transactions on nuclear science, 44(6), 1997, pp. 2353-2357
ESTIMATION OF LATCH-UP SENSITIVE THICKNESS AND CRITICAL ENERGY USING LARGE INCLINATION HEAVY-ION BEAMS
Authors: ECOFFET R DUZELLIER S
Citation: R. Ecoffet et S. Duzellier, ESTIMATION OF LATCH-UP SENSITIVE THICKNESS AND CRITICAL ENERGY USING LARGE INCLINATION HEAVY-ION BEAMS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2378-2385
CONSTELLATIONS FOR MOBILE SATELLITE SERVICES, AN OVERVIEW
Authors: HERNANDEZ D CUSSAC T ECOFFET R FOLIARD J THOBY M
Citation: D. Hernandez et al., CONSTELLATIONS FOR MOBILE SATELLITE SERVICES, AN OVERVIEW, Space communications, 14(2), 1996, pp. 101-110
AN EMPIRICAL-MODEL FOR PREDICTING PROTON-INDUCED UPSET
Authors: CALVEL P BARILLOT C LAMOTHE P ECOFFET R DUZELLIER S FALGUERE D
Citation: P. Calvel et al., AN EMPIRICAL-MODEL FOR PREDICTING PROTON-INDUCED UPSET, IEEE transactions on nuclear science, 43(6), 1996, pp. 2827-2832
SEU EXPERIMENTS ON AN ARTIFICIAL NEURAL-NETWORK IMPLEMENTED BY MEANS OF DIGITAL PROCESSORS
Authors: VELAZCO R ASSOUM A CHEYNET P OLMOS M ECOFFET R
Citation: R. Velazco et al., SEU EXPERIMENTS ON AN ARTIFICIAL NEURAL-NETWORK IMPLEMENTED BY MEANS OF DIGITAL PROCESSORS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2889-2896
ROBUSTNESS AGAINST SEU OF AN ARTIFICIAL NEURAL-NETWORK SPACE APPLICATION
Authors: ASSOUM A RADI NE VELAZCO R ELIE F ECOFFET R
Citation: A. Assoum et al., ROBUSTNESS AGAINST SEU OF AN ARTIFICIAL NEURAL-NETWORK SPACE APPLICATION, IEEE transactions on nuclear science, 43(3), 1996, pp. 973-978
RECENT TRENDS IN SINGLE-EVENT EFFECT GROUND TESTING
Authors: DUZELLIER S ECOFFET R
Citation: S. Duzellier et R. Ecoffet, RECENT TRENDS IN SINGLE-EVENT EFFECT GROUND TESTING, IEEE transactions on nuclear science, 43(2), 1996, pp. 671-677
SEE RESULTS USING HIGH-ENERGY IONS
Authors: DUZELLIER S FALGUERE D MOULIERE L ECOFFET R BUISSON J
Citation: S. Duzellier et al., SEE RESULTS USING HIGH-ENERGY IONS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1797-1802
SEU FAULT-TOLERANCE IN ARTIFICIAL NEURAL NETWORKS
Authors: VELAZCO R ASSOUM A RADI NE ECOFFET R BOTEY X
Citation: R. Velazco et al., SEU FAULT-TOLERANCE IN ARTIFICIAL NEURAL NETWORKS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1856-1862
INFLUENCE OF SOLAR-CYCLE ON SPOT-1,-2,-3 UPSET RATES
Authors: ECOFFET R PRIEUR M DELCASTILLO MF DUZELLIER S FALGUERE D
Citation: R. Ecoffet et al., INFLUENCE OF SOLAR-CYCLE ON SPOT-1,-2,-3 UPSET RATES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1983-1987
THE CESR MULTIMISSION RADIATION MONITOR
Authors: BOER M NAYA J CHABAUD JP EHANNO M ROUAIX G BAIGET A ECOFFET R LABRUNEE M CALVEL P REVERET P
Citation: M. Boer et al., THE CESR MULTIMISSION RADIATION MONITOR, IEEE transactions on nuclear science, 42(6), 1995, pp. 2010-2016
THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS BY EXPERIMENTAL AND SIMULATION APPROACHES
Authors: DELAROCHETTE H BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation: H. Delarochette et al., THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS BY EXPERIMENTAL AND SIMULATION APPROACHES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2222-2228
2 CMOS MEMORY CELLS SUITABLE FOR THE DESIGN OF SEU-TOLERANT VLSI CIRCUITS
Authors: VELAZCO R BESSOT D DUZELLIER S ECOFFET R KOGA R
Citation: R. Velazco et al., 2 CMOS MEMORY CELLS SUITABLE FOR THE DESIGN OF SEU-TOLERANT VLSI CIRCUITS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2229-2234
SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY APPLICATIONS
Authors: CALVEL P LAMOTHE P BARILLOT C ECOFFET R DUZELLIER S STASSINOPOULOS EG
Citation: P. Calvel et al., SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY APPLICATIONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2267-2271
Risultati: 1-25 | 26-27