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Results: 1-25/66
Authors:
DOLL T
FUCHS A
EISELE I
FAGLIA G
GROPPELLI S
SBERVEGLIERI G
Citation: T. Doll et al., CONDUCTIVITY AND WORK FUNCTION OZONE SENSORS BASED ON INDIUM OXIDE, Sensors and actuators. B, Chemical, 49(1-2), 1998, pp. 63-67
Authors:
FUCHS A
BOGNER M
DOLL T
EISELE I
Citation: A. Fuchs et al., ROOM-TEMPERATURE OZONE SENSING WITH KI LAYERS INTEGRATED IN HSGFET GAS SENSORS, Sensors and actuators. B, Chemical, 48(1-3), 1998, pp. 296-299
Authors:
BOGNER M
FUCHS A
SCHARNAGL K
WINTER R
DOLL T
EISELE I
Citation: M. Bogner et al., THIN (NIO)(1-X)(AL2O3)(X), AL DOPED AND AL COATED NIO LAYERS FOR GAS-DETECTION WITH HSGFET, Sensors and actuators. B, Chemical, 47(1-3), 1998, pp. 145-152
Authors:
BAUMGARTNER H
KAESEN F
GOSSNER H
EISELE I
Citation: H. Baumgartner et al., FORMATION OF SINGLE-CRYSTALLINE SILICON NANOSTRUCTURES BY SELF-ASSEMBLING GROWTH WITH MOLECULAR-BEAM EPITAXY, Applied surface science, 132, 1998, pp. 747-754
Authors:
KAESEN F
HANSCH W
EISELE I
KALUS M
Citation: F. Kaesen et al., QUANTUM-WIRE TRANSISTOR AT LOCALLY GROWN EDGES, Thin solid films, 321, 1998, pp. 106-110
Authors:
HANSCH W
RAO VR
FINK C
KAESEN F
EISELE I
Citation: W. Hansch et al., ELECTRIC-FIELD TAILORING IN MBE-GROWN VERTICAL SUB-100 NM MOSFETS, Thin solid films, 321, 1998, pp. 206-214
Authors:
STRASS A
HANSCH W
KAESEN F
FEHLAUER G
BIERINGER P
FISCHER A
EISELE I
Citation: A. Strass et al., LOW-TEMPERATURE ELECTRICAL SURFACE PASSIVATION OF MBE-GROWN PIN DIODES BY HYDROGEN AND OXYGEN PLASMA PROCESSES, Thin solid films, 321, 1998, pp. 261-264
Authors:
RUPP T
MESSAROSCH J
EISELE I
Citation: T. Rupp et al., SILICON-GERMANIUM MOLECULAR-BEAM EPITAXY SYSTEM FOR HIGH-QUALITY NANOSTRUCTURES AND DEVICES, Journal of crystal growth, 183(1-2), 1998, pp. 99-108
Authors:
ZOTOV AV
LIFSHITS VG
RUPP T
EISELE I
Citation: Av. Zotov et al., ELECTRICAL-PROPERTIES OF BURIED B SI SURFACE PHASES/, Journal of applied physics, 83(11), 1998, pp. 5865-5869
Authors:
BOGNER M
FUCHS A
SCHARNAGL K
WINTER R
DOLL T
EISELE I
Citation: M. Bogner et al., ELECTRICAL-FIELD IMPACT ON THE GAS ADSORPTIVITY OF THIN METAL-OXIDE FILMS, Applied physics letters, 73(17), 1998, pp. 2524-2526
Authors:
HELLMICH W
MULLER G
BOSCHVONBRAUNMUHL C
DOLL T
EISELE I
Citation: W. Hellmich et al., FIELD-EFFECT-INDUCED GAS SENSITIVITY CHANGES IN METAL-OXIDES, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 132-139
Authors:
RAO VR
EISELE I
PATRIKAR RM
SHARMA DK
VASI J
GRABOLLA T
Citation: Vr. Rao et al., HIGH-FIELD STRESSING OF LPCVD GATE OXIDES, IEEE electron device letters, 18(3), 1997, pp. 84-86
Authors:
BECK U
YANG P
METZGER TH
PEISL J
FALTA J
MATERLIK G
RUPP T
BAUMGARTNER H
EISELE I
PATEL JR
Citation: U. Beck et al., GE DELTA-LAYER IN SI(100) CHARACTERIZED BY X-RAY REFLECTIVITY, GRAZING-INCIDENCE DIFFRACTION AND STANDING-WAVE MEASUREMENTS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 403-410
Authors:
STRASS A
HANSCH W
BIERINGER P
NEUBECKER A
KAESEN F
FISCHER A
EISELE I
Citation: A. Strass et al., ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/, Surface & coatings technology, 97(1-3), 1997, pp. 158-162
Authors:
STRASS A
HANSCH W
NEUBECKER A
BIERINGER P
FISCHER A
EISELE I
Citation: A. Strass et al., SIO2 FILM GROWTH AT ROOM-TEMPERATURE BY PLASMA-ENHANCED EVAPORATION IN AN UHV CHAMBER, Vacuum, 48(7-9), 1997, pp. 701-704
Authors:
NEUBECKER A
POMPL T
DOLL T
HANSCH W
EISELE I
Citation: A. Neubecker et al., OZONE-ENHANCED MOLECULAR-BEAM DEPOSITION OF NICKEL-OXIDE (NIO) FOR SENSOR APPLICATIONS, Thin solid films, 310(1-2), 1997, pp. 19-23
Authors:
RAO VR
HANSCH W
BAUMGARTNER H
EISELE I
SHARMA DK
VASI J
GRABOLLA T
Citation: Vr. Rao et al., CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS, Thin solid films, 296(1-2), 1997, pp. 37-40
Authors:
RUPP T
KAESEN F
HANSCH W
HAMMERL E
GRAVESTEIJN DJ
SCHORER R
SILVEIRA E
ABSTREITER G
EISELE I
Citation: T. Rupp et al., DEFECT-FREE STRAIN RELAXATION IN LOCALLY MBE-GROWN SIGE HETEROSTRUCTURES, Thin solid films, 294(1-2), 1997, pp. 27-32
Authors:
ZHANG Z
KULAKOV MA
BULLEMER B
EISELE I
ZOTOV AV
Citation: Z. Zhang et al., B SI(100) SURFACE - ATOMIC-STRUCTURE AND EPITAXIAL SI OVERGROWTH/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2684-2689
Authors:
GEISTLINGER H
EISELE I
FLIETNER B
WINTER R
Citation: H. Geistlinger et al., DIPOLE-TRANSFER AND CHARGE-TRANSFER CONTRIBUTIONS TO THE WORK FUNCTION CHANGE OF SEMICONDUCTING THIN-FILMS - EXPERIMENT AND THEORY, Sensors and actuators. B, Chemical, 34(1-3), 1996, pp. 499-505
Authors:
DOLL T
LECHNER J
EISELE I
SCHIERBAUM KD
GOPEL W
Citation: T. Doll et al., OZONE DETECTION IN THE PPB RANGE WITH WORK FUNCTION SENSORS OPERATINGAT ROOM-TEMPERATURE, Sensors and actuators. B, Chemical, 34(1-3), 1996, pp. 506-510
Authors:
FLIETNER B
DOLL T
LECHNER J
EISELE I
Citation: B. Flietner et al., ADSORPTION INDUCED GAS-TRANSPORT PHENOMENA IN NARROW AIR CHANNELS RECORDED WITH WORK FUNCTION DETECTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 278-285
Authors:
BAUMGARTNER H
JIANG W
EISELE I
Citation: H. Baumgartner et al., EXCIMER-LASER INDUCED CHLORINE ETCHING OF SI PATTERNS FOR MICROELECTRONICS, Applied surface science, 106, 1996, pp. 301-305
Authors:
KULAKOV MA
ZHANG Z
ZOTOV AV
BULLEMER B
EISELE I
Citation: Ma. Kulakov et al., STRUCTURE OF THE B SI(100) SURFACE AT LOW BORON COVERAGE STUDIED BY SCANNING-TUNNELING-MICROSCOPY/, Applied surface science, 103(4), 1996, pp. 443-449
Authors:
RUPP T
EISELE I
GRAVESTEIJN DJ
Citation: T. Rupp et al., STRAIN RELAXATION AND SELF-ORGANIZING MBE-GROWTH OF LOCAL SIGE-STRUCTURES, Applied surface science, 102, 1996, pp. 385-389