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Results: 1-25 | 26-48
Results: 1-25/48
Globalization vs. nationalization - National interests as a problematic element in space exploration
Authors: Ensslin, K
Citation: K. Ensslin, Globalization vs. nationalization - National interests as a problematic element in space exploration, INT POLITIK, 56(7), 2001, pp. 12-18
Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation
Authors: Heinzel, T Held, R Luscher, S Ensslin, K Wegscheider, W Bichler, M
Citation: T. Heinzel et al., Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation, PHYSICA E, 9(1), 2001, pp. 84-93
Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures
Authors: Sigg, H Dehlinger, G Diehl, L Gennser, U Stutz, S Faist, J Grutzmacher, D Ensslin, K Muller, E
Citation: H. Sigg et al., Valence band intersubband electro luminescence from Si/SiGe quantum cascade structures, PHYSICA E, 11(2-3), 2001, pp. 240-244
Analysis of the temperature-dependent quantum point contact conductance inrelation to the metal-insulator transition in two dimensions
Authors: Senz, V Heinzel, T Ihn, T Lindemann, S Held, R Ensslin, K Wegscheider, W Bichler, M
Citation: V. Senz et al., Analysis of the temperature-dependent quantum point contact conductance inrelation to the metal-insulator transition in two dimensions, J PHYS-COND, 13(17), 2001, pp. 3831-3837
Electronic properties of AFM-defined semiconductor nanostructures
Authors: Luscher, S Held, R Fuhrer, A Heinzel, T Ensslin, K Bichler, M Wegscheider, W
Citation: S. Luscher et al., Electronic properties of AFM-defined semiconductor nanostructures, MAT SCI E C, 15(1-2), 2001, pp. 153-157
Phase diagram of a quantum dot with steep walls in strong magnetic fields
Authors: Fuhrer, A Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: A. Fuhrer et al., Phase diagram of a quantum dot with steep walls in strong magnetic fields, PHYS ST S-B, 224(2), 2001, pp. 555-560
Investigation of spin pairing in a semiconductor quantum dot
Authors: Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: S. Luscher et al., Investigation of spin pairing in a semiconductor quantum dot, PHYS ST S-B, 224(2), 2001, pp. 561-565
Modelling background charge rearrangements near single-electron transistors as a Poisson process
Authors: Muller, HO Furlan, M Heinzel, T Ensslin, K
Citation: Ho. Muller et al., Modelling background charge rearrangements near single-electron transistors as a Poisson process, EUROPH LETT, 55(2), 2001, pp. 253-259
Transport properties of quantum dots with steep walls - art. no. 125309
Authors: Fuhrer, A Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: A. Fuhrer et al., Transport properties of quantum dots with steep walls - art. no. 125309, PHYS REV B, 6312(12), 2001, pp. 5309
Signatures of spin pairing in chaotic quantum dots
Authors: Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: S. Luscher et al., Signatures of spin pairing in chaotic quantum dots, PHYS REV L, 86(10), 2001, pp. 2118-2121
Electrical control of spin coherence in semiconductor nanostructures
Authors: Salis, G Kato, Y Ensslin, K Driscoll, DC Gossard, AC Awschalom, DD
Citation: G. Salis et al., Electrical control of spin coherence in semiconductor nanostructures, NATURE, 414(6864), 2001, pp. 619-622
Energy spectra of quantum rings
Authors: Fuhrer, A Luescher, S Ihn, T Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: A. Fuhrer et al., Energy spectra of quantum rings, NATURE, 413(6858), 2001, pp. 822-825
Detailed analysis of forces influencing lateral resolution for Q-control and tapping mode
Authors: Jaggi, RD Franco-Obregon, A Studerus, P Ensslin, K
Citation: Rd. Jaggi et al., Detailed analysis of forces influencing lateral resolution for Q-control and tapping mode, APPL PHYS L, 79(1), 2001, pp. 135-137
Single-hole transistor in a p-Si/SiGe quantum well
Authors: Dotsch, U Gennser, U David, C Dehlinger, G Grutzmacher, D Heinzel, T Luscher, S Ensslin, K
Citation: U. Dotsch et al., Single-hole transistor in a p-Si/SiGe quantum well, APPL PHYS L, 78(3), 2001, pp. 341-343
Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells
Authors: Senz, V Heinzel, T Ihn, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation: V. Senz et al., Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells, PHYS REV B, 61(8), 2000, pp. R5082-R5085
Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors
Authors: Furlan, M Heinzel, T Jeanneret, B Lotkhov, SV Ensslin, K
Citation: M. Furlan et al., Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors, EUROPH LETT, 49(3), 2000, pp. 369-375
Force-distance studies with piezoelectric tuning forks below 4.2 K
Authors: Rychen, J Ihn, T Studerus, P Herrmann, A Ensslin, K Hug, HJ van Schendel, PJA Guntherodt, HJ
Citation: J. Rychen et al., Force-distance studies with piezoelectric tuning forks below 4.2 K, APPL SURF S, 157(4), 2000, pp. 290-294
Electron transport in a two-dimensional electron gas with magnetic barriers
Authors: Vancura, T Ihn, T Broderick, S Ensslin, K Wegscheider, W Bichler, M
Citation: T. Vancura et al., Electron transport in a two-dimensional electron gas with magnetic barriers, PHYS REV B, 62(8), 2000, pp. 5074-5078
Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space
Authors: Heinzel, T Salis, G Held, R Luscher, S Ensslin, K Wegscheider, W Bichler, M
Citation: T. Heinzel et al., Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space, PHYS REV B, 61(20), 2000, pp. R13353-R13356
InAs-AlSb quantum wells in tilted magnetic fields
Authors: Brosig, S Ensslin, K Jansen, AG Nguyen, C Brar, B Thomas, M Kroemer, H
Citation: S. Brosig et al., InAs-AlSb quantum wells in tilted magnetic fields, PHYS REV B, 61(19), 2000, pp. 13045-13049
Investigation of the emitter structure in SiGe/Si resonant tunneling structures
Authors: Dehlinger, G Gennser, U Grutzmacher, D Ihn, T Muller, E Ensslin, K
Citation: G. Dehlinger et al., Investigation of the emitter structure in SiGe/Si resonant tunneling structures, THIN SOL FI, 369(1-2), 2000, pp. 390-393
Intersubband electroluminescence from silicon-based quantum cascade structures
Authors: Dehlinger, G Diehl, L Gennser, U Sigg, H Faist, J Ensslin, K Grutzmacher, D Muller, E
Citation: G. Dehlinger et al., Intersubband electroluminescence from silicon-based quantum cascade structures, SCIENCE, 290(5500), 2000, pp. 2277
Operation characteristics of piezoelectric quartz tuning forks in high magnetic fields at liquid helium temperatures
Authors: Rychen, J Ihn, T Studerus, P Herrmann, A Ensslin, K Hug, HJ van Schendel, PJA Guntherodt, HJ
Citation: J. Rychen et al., Operation characteristics of piezoelectric quartz tuning forks in high magnetic fields at liquid helium temperatures, REV SCI INS, 71(4), 2000, pp. 1695-1697
Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening
Authors: Senz, V Ihn, T Heinzel, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U
Citation: V. Senz et al., Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening, PHYS REV L, 85(20), 2000, pp. 4357-4360
In-plane gate single electron transistor fabricated by AFM lithography
Authors: Luscher, S Fuhrer, A Held, R Heinzel, T Ensslin, K Wegscheider, W Bichler, M
Citation: S. Luscher et al., In-plane gate single electron transistor fabricated by AFM lithography, J L TEMP PH, 118(5-6), 2000, pp. 333-342
Risultati: 1-25 | 26-48