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Results: 1-25 | 26-47
Results: 1-25/47
PAPERS FROM THE 25TH ANNUAL CONFERENCE ON THE PHYSICS AD CHEMISTRY OFSEMICONDUCTOR INTERFACES - PREFACE
Authors: ROWE JE FEENSTRA RM
Citation: Je. Rowe et Rm. Feenstra, PAPERS FROM THE 25TH ANNUAL CONFERENCE ON THE PHYSICS AD CHEMISTRY OFSEMICONDUCTOR INTERFACES - PREFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2133-2133
RECONSTRUCTIONS OF GAN(0001) AND GAN(0001) SURFACES - GA-RICH METALLIC STRUCTURES
Authors: SMITH AR FEENSTRA RM GREVE DW SHIN MS SKOWRONSKI M NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., RECONSTRUCTIONS OF GAN(0001) AND GAN(0001) SURFACES - GA-RICH METALLIC STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2242-2249
SCANNING-TUNNELING-MICROSCOPY OF THE GAN(000(1)OVER-BAR) SURFACE
Authors: SMITH AR FEENSTRA RM GREVE DW NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., SCANNING-TUNNELING-MICROSCOPY OF THE GAN(000(1)OVER-BAR) SURFACE, Applied physics A: Materials science & processing, 66, 1998, pp. 947-951
THE SEARCH FOR RESIDUAL RESISTIVITY DIPOLES BY SCANNING TUNNELING POTENTIOMETRY
Authors: FEENSTRA RM BRINER BG
Citation: Rm. Feenstra et Bg. Briner, THE SEARCH FOR RESIDUAL RESISTIVITY DIPOLES BY SCANNING TUNNELING POTENTIOMETRY, Superlattices and microstructures, 23(3-4), 1998, pp. 699-709
SURFACE-INFLUENCED PHASE-SEPARATION IN ORGANIC THIN-FILMS ON DRYING
Authors: SARAF RF OSTRANDER S FEENSTRA RM
Citation: Rf. Saraf et al., SURFACE-INFLUENCED PHASE-SEPARATION IN ORGANIC THIN-FILMS ON DRYING, Langmuir, 14(2), 1998, pp. 483-489
WURTZITE GAN SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
Authors: SMITH AR RAMACHANDRAN V FEENSTRA RM GREVE DW SHIN MS SKOWRONSKI M NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., WURTZITE GAN SURFACE-STRUCTURES STUDIED BY SCANNING-TUNNELING-MICROSCOPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1641-1645
PREPARATION OF ATOMICALLY FLAT SURFACES ON SILICON-CARBIDE USING HYDROGEN ETCHING
Authors: RAMACHANDRAN V BRADY MF SMITH AR FEENSTRA RM GREVE DW
Citation: V. Ramachandran et al., PREPARATION OF ATOMICALLY FLAT SURFACES ON SILICON-CARBIDE USING HYDROGEN ETCHING, Journal of electronic materials, 27(4), 1998, pp. 308-312
IN-SITU REAL-TIME STUDIES OF GAN GROWTH ON 6H-SIC(0001) BY LOW-ENERGY-ELECTRON MICROSCOPY (LEEM)
Authors: PAVLOVSKA A BAUER E TORRES VM EDWARDS JL DOAK RB TSONG IST RAMACHANDRAN V FEENSTRA RM
Citation: A. Pavlovska et al., IN-SITU REAL-TIME STUDIES OF GAN GROWTH ON 6H-SIC(0001) BY LOW-ENERGY-ELECTRON MICROSCOPY (LEEM), Journal of crystal growth, 190, 1998, pp. 310-316
EFFECTS OF GAAS SUBSTRATE MISORIENTATION ON STRAIN RELAXATION IN INXGA1-XAS FILMS AND MULTILAYERS
Authors: GOLDMAN RS KAVANAGH KL WIEDER HH EHRLICH SN FEENSTRA RM
Citation: Rs. Goldman et al., EFFECTS OF GAAS SUBSTRATE MISORIENTATION ON STRAIN RELAXATION IN INXGA1-XAS FILMS AND MULTILAYERS, Journal of applied physics, 83(10), 1998, pp. 5137-5149
DETERMINATION OF WURTZITE GAN LATTICE POLARITY BASED ON SURFACE RECONSTRUCTION
Authors: SMITH AR FEENSTRA RM GREVE DW SHIN MS SKOWRONSKI M NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., DETERMINATION OF WURTZITE GAN LATTICE POLARITY BASED ON SURFACE RECONSTRUCTION, Applied physics letters, 72(17), 1998, pp. 2114-2116
STRAIN VARIATIONS IN INGAASP INGAP SUPERLATTICES STUDIED BY SCANNING PROBE MICROSCOPY/
Authors: CHEN HJ FEENSTRA RM GOLDMAN RS SILFVENIUS C LANDGREN G
Citation: Hj. Chen et al., STRAIN VARIATIONS IN INGAASP INGAP SUPERLATTICES STUDIED BY SCANNING PROBE MICROSCOPY/, Applied physics letters, 72(14), 1998, pp. 1727-1729
A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/
Authors: PIVA PG GOLDBERG RD MITCHELL IV CHEN HJ FEENSTRA RM WEATHERLY GC MCCOMB DW AERS GC POOLE PJ CHARBONNEAU S
Citation: Pg. Piva et al., A COMPARISON OF SPECTROSCOPIC AND MICROSCOPIC OBSERVATIONS OF ION-INDUCED INTERMIXING IN INGAAS INP QUANTUM-WELLS/, Applied physics letters, 72(13), 1998, pp. 1599-1601
MORPHOLOGICAL AND COMPOSITIONAL VARIATIONS IN STRAIN-COMPENSATED INGAASP INGAP SUPERLATTICES/
Authors: GOLDMAN RS FEENSTRA RM SILFVENIUS C STALNACKE B LANDGREN G
Citation: Rs. Goldman et al., MORPHOLOGICAL AND COMPOSITIONAL VARIATIONS IN STRAIN-COMPENSATED INGAASP INGAP SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1027-1033
NANOMETER-SCALE STUDIES OF NITRIDE ARSENIDE HETEROSTRUCTURES PRODUCEDBY NITROGEN PLASMA EXPOSURE OF GAAS/
Authors: GOLDMAN RS FEENSTRA RM BRINER BG OSTEEN ML HAUENSTEIN RJ
Citation: Rs. Goldman et al., NANOMETER-SCALE STUDIES OF NITRIDE ARSENIDE HETEROSTRUCTURES PRODUCEDBY NITROGEN PLASMA EXPOSURE OF GAAS/, Journal of electronic materials, 26(11), 1997, pp. 1342-1348
RECONSTRUCTIONS OF THE GAN(000(1)OVER-BAR) SURFACE
Authors: SMITH AR FEENSTRA RM GREVE DW NEUGEBAUER J NORTHRUP JE
Citation: Ar. Smith et al., RECONSTRUCTIONS OF THE GAN(000(1)OVER-BAR) SURFACE, Physical review letters, 79(20), 1997, pp. 3934-3937
GROWTH AND TRANSPORT-PROPERTIES OF THIN BI FILMS ON INP(110)
Authors: BRINER BG FEENSTRA RM CHIN TP WOODALL JM
Citation: Bg. Briner et al., GROWTH AND TRANSPORT-PROPERTIES OF THIN BI FILMS ON INP(110), Semiconductor science and technology, 11(11), 1996, pp. 1575-1581
LOCAL TRANSPORT-PROPERTIES OF THIN BISMUTH-FILMS STUDIED BY SCANNING TUNNELING POTENTIOMETRY
Authors: BRINER BG FEENSTRA RM CHIN TP WOODALL JM
Citation: Bg. Briner et al., LOCAL TRANSPORT-PROPERTIES OF THIN BISMUTH-FILMS STUDIED BY SCANNING TUNNELING POTENTIOMETRY, Physical review. B, Condensed matter, 54(8), 1996, pp. 5283-5286
CORRELATION OF BUFFER STRAIN RELAXATION MODES WITH TRANSPORT-PROPERTIES OF 2-DIMENSIONAL ELECTRON GASES
Authors: GOLDMAN RS KAVANAGH KL WIEDER HH ROBBINS VM EHRLICH SN FEENSTRA RM
Citation: Rs. Goldman et al., CORRELATION OF BUFFER STRAIN RELAXATION MODES WITH TRANSPORT-PROPERTIES OF 2-DIMENSIONAL ELECTRON GASES, Journal of applied physics, 80(12), 1996, pp. 6849-6854
UNIQUE X-RAY-DIFFRACTION PATTERN AT GRAZING-INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN-FILMS
Authors: JORDANSWEET JL MOONEY PM LUTZ MA FEENSTRA RM CHU JO LEGOUES FK
Citation: Jl. Jordansweet et al., UNIQUE X-RAY-DIFFRACTION PATTERN AT GRAZING-INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN-FILMS, Journal of applied physics, 80(1), 1996, pp. 89-96
ATOMIC-SCALE STRUCTURE AND ELECTRONIC-PROPERTIES OF GAN GAAS SUPERLATTICES/
Authors: GOLDMAN RS FEENSTRA RM BRINER BG OSTEEN ML HAUENSTEIN RJ
Citation: Rs. Goldman et al., ATOMIC-SCALE STRUCTURE AND ELECTRONIC-PROPERTIES OF GAN GAAS SUPERLATTICES/, Applied physics letters, 69(24), 1996, pp. 3698-3700
HIGH FAILURE RATE OF CEMENTLESS THREADED ACETABULAR CUPS - A RADIOGRAPHIC AND HISTOLOGIC-STUDY IN THE GOAT
Authors: BRUIJN JD SEELEN JL VELDHUIZEN RW FEENSTRA RM BERNOSKI FP KLOPPER PJ
Citation: Jd. Bruijn et al., HIGH FAILURE RATE OF CEMENTLESS THREADED ACETABULAR CUPS - A RADIOGRAPHIC AND HISTOLOGIC-STUDY IN THE GOAT, Acta orthopaedica Scandinavica, 67(2), 1996, pp. 133-137
ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/
Authors: FEENSTRA RM LUTZ MA STERN F ISMAIL K MOONEY PM LEGOUES FK STANIS C CHU JO MEYERSON BS
Citation: Rm. Feenstra et al., ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1608-1612
STUDY OF INTERFACE ASYMMETRY IN INAS-GASB HETEROJUNCTIONS
Authors: WANG MW COLLINS DA MCGILL TC GRANT RW FEENSTRA RM
Citation: Mw. Wang et al., STUDY OF INTERFACE ASYMMETRY IN INAS-GASB HETEROJUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1689-1693
LOW-TEMPERATURE-GROWN III-V MATERIALS
Authors: MELLOCH MR WOODALL JM HARMON ES OTSUKA N POLLAK FH NOLTE DD FEENSTRA RM LUTZ MA
Citation: Mr. Melloch et al., LOW-TEMPERATURE-GROWN III-V MATERIALS, Annual review of materials science, 25, 1995, pp. 547-600
SCANNING-TUNNELING-MICROSCOPY OF IN-SITU CLEAVED AND HYDROGEN PASSIVATED SI(110) CROSS-SECTIONAL SURFACES
Authors: LUTZ MA FEENSTRA RM CHU JO
Citation: Ma. Lutz et al., SCANNING-TUNNELING-MICROSCOPY OF IN-SITU CLEAVED AND HYDROGEN PASSIVATED SI(110) CROSS-SECTIONAL SURFACES, Surface science, 328(3), 1995, pp. 215-226
Risultati: 1-25 | 26-47