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Results:
1-16
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Results: 16
Authors:
GATZKE C
WEBB SJ
FOBELETS K
STRADLING RA
Citation: C. Gatzke et al., IN-SITU RAMAN-SPECTROSCOPY OF THE SELECTIVE ETCHING OF ANTIMONIDES INGASB ALSB/INAS HETEROSTRUCTURES/, Semiconductor science and technology, 13(4), 1998, pp. 399-403
Authors:
FOBELETS K
BORGHS G
Citation: K. Fobelets et G. Borghs, INFLUENCE OF THE UNDOPED SPACER LAYER THICKNESS ON THE DC CHARACTERISTICS OF N-TYPE GAAS ALAS MESFET/, Semiconductor science and technology, 13(3), 1998, pp. 318-321
Authors:
FOBELETS K
JEAMSAKSIRI W
HAMPSON J
TOUMAZOU C
THORNTON T
Citation: K. Fobelets et al., SI-SIGE MODFET CURRENT MIRROR, Electronics Letters, 34(22), 1998, pp. 2076-2077
Authors:
KAYA S
THORNTON TJ
GREEN PW
FOBELETS K
FERNANDEZ JM
Citation: S. Kaya et al., EVIDENCE FOR INTER-MINIBAND SCATTERING DUE TO ELECTRON HEATING IN SI-SIGE QUANTUM-WELLS GROWN ON TILTED SUBSTRATES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 227-229
Authors:
THORNTON TJ
FERNANDEZ JM
KAYA S
GREEN PW
FOBELETS K
Citation: Tj. Thornton et al., SI-SIGE QUANTUM-WELLS GROWN ON (118) SUBSTRATES - SURFACE-MORPHOLOGY AND TRANSPORT-PROPERTIES, Applied physics letters, 70(10), 1997, pp. 1278-1280
Authors:
FOBELETS K
THIELEMANS K
Citation: K. Fobelets et K. Thielemans, OPTICAL MEDIA WITH AN IMAGINARY 3RD-ORDER NONLINEARITY ANALYZED BY HAMILTONIAN-SYSTEMS, Physical review. A, 53(6), 1996, pp. 4400-4407
CONTROLLED SHIFT OF THE OPTICAL RESONANCE OF FULLY PROCESSED ASYMMETRIC FABRY-PEROT MODULATOR ARRAYS
Authors:
FOBELETS K
KELLY B
HORAN P
HEGARTY J
Citation: K. Fobelets et al., CONTROLLED SHIFT OF THE OPTICAL RESONANCE OF FULLY PROCESSED ASYMMETRIC FABRY-PEROT MODULATOR ARRAYS, Semiconductor science and technology, 11(4), 1996, pp. 582-586
Authors:
GENOE J
FOBELETS K
VANHOOF C
BORGHS G
Citation: J. Genoe et al., INPLANE DISPERSION-RELATIONS OF INAS ALSB/GASB/ALSB/INAS INTERBAND RESONANT-TUNNELING DIODES (VOL 52, PG 14025, 1995)/, Physical review. B, Condensed matter, 53(19), 1996, pp. 13194-13194
Authors:
FOBELETS K
VANHOOF C
GENOE J
STAKE J
LUNDGREN L
BORGHS G
Citation: K. Fobelets et al., HIGH-FREQUENCY CAPACITANCE OF BIPOLAR RESONANT-TUNNELING DIODES, Journal of applied physics, 79(2), 1996, pp. 905-910
Authors:
GENOE J
FOBELETS K
VANHOOF C
BORGHS G
Citation: J. Genoe et al., INPLANE DISPERSION-RELATIONS OF INAS ALSB/GASB/ALSB/INAS INTERBAND RESONANT-TUNNELING DIODES/, Physical review. B, Condensed matter, 52(19), 1995, pp. 14025-14034
Authors:
FOBELETS K
BORGHS G
HEGARTY J
Citation: K. Fobelets et al., EXPERIMENTAL DRAIN CURRENT DROP-BACK IN GAAS-MESFETS, Electronics Letters, 31(23), 1995, pp. 2042-2044
Authors:
FOBELETS K
VOUNCKX R
BORGHS G
Citation: K. Fobelets et al., A GAAS PRESSURE SENSOR-BASED ON RESONANT-TUNNELING DIODES, Journal of micromechanics and microengineering, 4(3), 1994, pp. 123-128
Authors:
FOBELETS K
VOUNCKX R
GENOE J
BORGHS G
GRONQVIST H
LUNDGREN L
Citation: K. Fobelets et al., HIGH-FREQUENCY CAPACITANCES IN RESONANT INTERBAND TUNNELING DIODES, Applied physics letters, 64(19), 1994, pp. 2523-2525
Authors:
FOBELETS K
GENOE J
VOUNCKX R
BORGHS G
Citation: K. Fobelets et al., A PROPOSAL FOR A 3-BIT A D CONVERTER USING 3 RESONANT-TUNNELING DIODES/, Semiconductor science and technology, 8(12), 1993, pp. 2106-2114
Authors:
FOBELETS K
VOUNCKX R
BORGHS G
Citation: K. Fobelets et al., MATRIX FORMALISM FOR THE TRIPLE-BAND EFFECTIVE-MASS EQUATION, Semiconductor science and technology, 8(10), 1993, pp. 1815-1821
Authors:
FOBELETS K
VOUNCKX R
BORGHS G
Citation: K. Fobelets et al., INFLUENCE OF RESISTANCES ON CHARACTERISTICS OF VERTICALLY INTEGRATED RESONANT-TUNNELING DIODES, Electronics Letters, 29(1), 1993, pp. 57-59
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