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Results: 1-25 | 26-50 | 51-65
Results: 1-25/65
INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS
Authors: WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., INTERFACE STATES INDUCED IN GAAS BY GROWTH INTERRUPTION DURING AN IN-SITU PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2313-2316
MICROELECTRONICS AND NANOMETER STRUCTURES - PROCESSING, MEASUREMENT, AND PHENOMENA - PREFACE
Authors: MELNGAILIS J GAMO K ORLOFF J
Citation: J. Melngailis et al., MICROELECTRONICS AND NANOMETER STRUCTURES - PROCESSING, MEASUREMENT, AND PHENOMENA - PREFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2438-2438
FOCUSED ION-BEAM ETCHING OF RESIST NI MULTILAYER FILMS AND APPLICATIONS TO METAL ISLAND STRUCTURE FORMATION
Authors: NAKAYAMA M WAKAYA F YANAGISAWA J GAMO K
Citation: M. Nakayama et al., FOCUSED ION-BEAM ETCHING OF RESIST NI MULTILAYER FILMS AND APPLICATIONS TO METAL ISLAND STRUCTURE FORMATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2511-2514
DISTORTION OF FERMI-SURFACE INDUCED BY PARALLEL MAGNETIC-FIELD IN A 2-DIMENSIONAL ELECTRON-GAS
Authors: OHTSUKA K TAKAOKA S OTO K MURASE K GAMO K
Citation: K. Ohtsuka et al., DISTORTION OF FERMI-SURFACE INDUCED BY PARALLEL MAGNETIC-FIELD IN A 2-DIMENSIONAL ELECTRON-GAS, Physica. B, Condensed matter, 251, 1998, pp. 780-783
COMMENSURABILITY OSCILLATIONS BY RUNAWAY AND PINNED ELECTRONS
Authors: TSUKAGOSHI K NAGAO T HARAGUCHI M TAKAOKA S MURASE K GAMO K
Citation: K. Tsukagoshi et al., COMMENSURABILITY OSCILLATIONS BY RUNAWAY AND PINNED ELECTRONS, Superlattices and microstructures, 23(2), 1998, pp. 493-496
SINGLE-ELECTRON TUNNELING DEVICE WITH VARIABLE ENVIRONMENTAL IMPEDANCE
Authors: WAKAYA F YOSHIOKA F IWABUCHI S HIGURASHI H NAGAOKA Y GAMO K
Citation: F. Wakaya et al., SINGLE-ELECTRON TUNNELING DEVICE WITH VARIABLE ENVIRONMENTAL IMPEDANCE, Semiconductor science and technology, 13(8A), 1998, pp. 107-110
FABRICATION OF SLOT ANTENNA COUPLED WARM CARRIER DETECTORS FOR MILLIMETER-WAVE RADIATION
Authors: YASUOKA Y SHIMIZU T GAMO K
Citation: Y. Yasuoka et al., FABRICATION OF SLOT ANTENNA COUPLED WARM CARRIER DETECTORS FOR MILLIMETER-WAVE RADIATION, Microelectronic engineering, 42, 1998, pp. 445-448
EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES
Authors: WAKAYA F MATSUBARA T NAKAYAMA M YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., EFFECTS OF GROWTH INTERRUPTION IN IN-SITU PROCESS FOR BURIED QUANTUM STRUCTURES, Microelectronic engineering, 42, 1998, pp. 591-594
BREAKDOWN OF QUANTUM HALL-EFFECT IN 2-DIMENSIONAL ELECTRON-SYSTEM WITH ANTIDOT ARRAYS
Authors: SANUKI T TAKAOKA S OTO K MURASE K GAMO K
Citation: T. Sanuki et al., BREAKDOWN OF QUANTUM HALL-EFFECT IN 2-DIMENSIONAL ELECTRON-SYSTEM WITH ANTIDOT ARRAYS, Solid-state electronics, 42(7-8), 1998, pp. 1165-1167
TIME-RESOLVED FAR-INFRARED MAGNETOOPTICAL ABSORPTION OF A QUANTUM-DOTARRAY
Authors: FUJII K YOSHIZAWA T OHYAMA T OTO K TAKAOKA S MURASE K GAMO K
Citation: K. Fujii et al., TIME-RESOLVED FAR-INFRARED MAGNETOOPTICAL ABSORPTION OF A QUANTUM-DOTARRAY, Solid-state electronics, 42(7-8), 1998, pp. 1349-1353
SINGLE-ELECTRON TUNNELING DEVICE CONTROLLED BY ENVIRONMENTAL IMPEDANCE MODULATION
Authors: WAKAYA F IWABUCHI S HIGURASHI H NAGAOKA Y GAMO K
Citation: F. Wakaya et al., SINGLE-ELECTRON TUNNELING DEVICE CONTROLLED BY ENVIRONMENTAL IMPEDANCE MODULATION, Solid-state electronics, 42(7-8), 1998, pp. 1401-1405
ELECTRON-BEAM-INDUCED OXIDATION FOR SINGLE-ELECTRON DEVICES
Authors: MATSUTANI M WAKAYA F TAKAOKA S MURASE K GAMO K
Citation: M. Matsutani et al., ELECTRON-BEAM-INDUCED OXIDATION FOR SINGLE-ELECTRON DEVICES, JPN J A P 1, 36(12B), 1997, pp. 7782-7785
CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM
Authors: YANAGISAWA J NAKAYAMA H OKA K NAKAI M WAKAYA F YUBA Y TAKAOKA S MURASE K GAMO K
Citation: J. Yanagisawa et al., CHARACTERIZATION OF SI-DOPED LAYER IN GAAS FABRICATED BY A FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2930-2933
DIRECT DEPOSITION OF SILICON AND SILICON-OXIDE FILMS USING LOW-ENERGYSI FOCUSED ION-BEAMS
Authors: YANAGISAWA J NAKAYAMA H MATSUDA O MURASE K GAMO K
Citation: J. Yanagisawa et al., DIRECT DEPOSITION OF SILICON AND SILICON-OXIDE FILMS USING LOW-ENERGYSI FOCUSED ION-BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 893-896
RECENT ADVANCES OF FOCUSED ION-BEAM TECHNOLOGY
Authors: GAMO K
Citation: K. Gamo, RECENT ADVANCES OF FOCUSED ION-BEAM TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 464-469
FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS
Authors: WAKAYA F YANAGISAWA J MATSUBARA T NAKAYAMA H YUBA Y TAKAOKA S GAMO K
Citation: F. Wakaya et al., FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS, Microelectronic engineering, 35(1-4), 1997, pp. 451-454
ELECTRON PUMP IN MULTIPLE-TUNNEL JUNCTIONS
Authors: TSUKAGOSHI K NAKAZATO K AHMED H GAMO K
Citation: K. Tsukagoshi et al., ELECTRON PUMP IN MULTIPLE-TUNNEL JUNCTIONS, Physical review. B, Condensed matter, 56(7), 1997, pp. 3972-3975
CONFINEMENT POTENTIAL IN AN ASYMMETRICALLY BIASED QUANTUM POINT-CONTACT
Authors: WAKAYA F TAKAHARA J TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., CONFINEMENT POTENTIAL IN AN ASYMMETRICALLY BIASED QUANTUM POINT-CONTACT, JPN J A P 1, 35(2B), 1996, pp. 1329-1332
CHARACTERIZATION OF DIRECTLY DEPOSITED SILICON FILMS USING LOW-ENERGYFOCUSED ION-BEAM
Authors: YANAGISAWA J ONISHI N NAKAYAMA H GAMO K
Citation: J. Yanagisawa et al., CHARACTERIZATION OF DIRECTLY DEPOSITED SILICON FILMS USING LOW-ENERGYFOCUSED ION-BEAM, JPN J A P 1, 35(12B), 1996, pp. 6584-6587
THIN-FILM SLOT ANTENNAS FOR 2.5 THZ SUBMILLIMETER RADIATION
Authors: SHIMIZU T ABE Y YASUOKA Y GAMO K
Citation: T. Shimizu et al., THIN-FILM SLOT ANTENNAS FOR 2.5 THZ SUBMILLIMETER RADIATION, JPN J A P 2, 35(2B), 1996, pp. 266-268
FABRICATION OF LATERALLY SELECTED SI DOPED LAYER IN GAAS USING A LOW-ENERGY FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM
Authors: YANAGISAWA J NAKAYAMA H WAKAYA F YUBA Y GAMO K
Citation: J. Yanagisawa et al., FABRICATION OF LATERALLY SELECTED SI DOPED LAYER IN GAAS USING A LOW-ENERGY FOCUSED ION-BEAM MOLECULAR-BEAM EPITAXY COMBINED SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3938-3941
MECHANISM OF COMMENSURABILITY OSCILLATIONS IN ANISOTROPIC ANTIDOT LATTICE
Authors: TSUKAGOSHI K TAKAOKA S MURASE K GAMO K
Citation: K. Tsukagoshi et al., MECHANISM OF COMMENSURABILITY OSCILLATIONS IN ANISOTROPIC ANTIDOT LATTICE, Physica. B, Condensed matter, 227(1-4), 1996, pp. 141-143
TEMPERATURE-DEPENDENCE OF THE BEND RESISTANCE OF COMPOSITE FERMIONS IN NARROW CROSS JUNCTIONS
Authors: HERFORT J TAKAGAKI Y FRIEDLAND KJ HEY R PLOOG K TAKAHARA J GAMO K
Citation: J. Herfort et al., TEMPERATURE-DEPENDENCE OF THE BEND RESISTANCE OF COMPOSITE FERMIONS IN NARROW CROSS JUNCTIONS, Physica. B, Condensed matter, 227(1-4), 1996, pp. 170-172
EFFECTS OF GROWTH INTERRUPTION AND FIB IMPLANTATION IN THE UHV TOTAL VACUUM PROCESS FOR THE BURIED MESOSCOPIC STRUCTURES
Authors: WAKAYA F MATSUBARA T NAKAYAMA H YANAGISAWA J YUBA Y TAKAOKA S MURASE K GAMO K
Citation: F. Wakaya et al., EFFECTS OF GROWTH INTERRUPTION AND FIB IMPLANTATION IN THE UHV TOTAL VACUUM PROCESS FOR THE BURIED MESOSCOPIC STRUCTURES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 268-270
NANOFABRICATION BY FIB
Authors: GAMO K
Citation: K. Gamo, NANOFABRICATION BY FIB, Microelectronic engineering, 32(1-4), 1996, pp. 159-171
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