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Results:
1-11
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Results: 11
Authors:
PIOTROWICZ S
GAQUIERE C
BONTE B
BOURCIER E
THERON D
WALLART X
CROSNIER Y
Citation: S. Piotrowicz et al., BEST COMBINATION BETWEEN POWER-DENSITY, EFFICIENCY, AND GAIN AT V-BAND WITH AN INP-BASED PHEMT STRUCTURE, IEEE microwave and guided wave letters, 8(1), 1998, pp. 10-12
Authors:
ZAKNOUNE M
BONTE B
GAQUIERE C
CORDIER Y
DRUELLE Y
THERON D
CROSNIER Y
Citation: M. Zaknoune et al., INALAS INGAAS METAMORPHIC HEMT WITH HIGH-CURRENT DENSITY AND HIGH BREAKDOWN VOLTAGE/, IEEE electron device letters, 19(9), 1998, pp. 345-347
Authors:
BONTE B
GAQUIERE C
BOURCIER E
LEMEUR G
CROSNIER Y
Citation: B. Bonte et al., AN AUTOMATED-SYSTEM FOR MEASURING POWER DEVICES IN KA-BAND, IEEE transactions on microwave theory and techniques, 46(1), 1998, pp. 70-75
Authors:
GAQUIERE C
BOURCIER E
PIOTROWICZ S
CROSNIER Y
Citation: C. Gaquiere et al., ANALYSES OF THE OPTIMAL POWER LOAD IMPEDANCES MEASURED IN MMIC AND HYBRID CONFIGURATION IN THE K-ALPHA BAND, IEEE microwave and guided wave letters, 7(10), 1997, pp. 356-358
Authors:
BOUDART B
GAQUIERE C
THERON D
Citation: B. Boudart et al., GATE CURRENT ANALYSIS OF LT-GAAS PASSIVATED MESFETS, Electronics Letters, 33(17), 1997, pp. 1496-1498
Authors:
BOUDART B
GAQUIERE C
TRASSAERT S
THERON D
SPLINGART B
LIPKA M
KOHN E
Citation: B. Boudart et al., SMALL-SIGNAL AND LARGE-SIGNAL MEASUREMENTS OF LOW-TEMPERATURE GAAS-FETS, Microwave and optical technology letters, 12(2), 1996, pp. 57-59
Authors:
GAQUIERE C
BONTE B
THERON D
CROSNIER Y
FAVRE J
Citation: C. Gaquiere et al., ANALYSIS OF THE SOURCE INDUCTANCE EFFECT ON THE POWER PERFORMANCE OF HIGH DEVELOPMENT HEMTS IN THE KA-BAND, IEEE microwave and guided wave letters, 5(8), 1995, pp. 243-245
Authors:
GAQUIERE C
BONTE B
THERON D
CROSNIER Y
ARSENEHENRI P
PACOU T
Citation: C. Gaquiere et al., BREAKDOWN ANALYSIS OF AN ASYMMETRICAL DOUBLE RECESSED POWER MESFETS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 209-214
Authors:
GAQUIERE C
THERON D
BONTE B
CROSNIER Y
Citation: C. Gaquiere et al., OPTIMIZATION OF A POWER PSEUDOMORPHIC DOUBLE-HETEROJUNCTION FET, Microwave and optical technology letters, 7(18), 1994, pp. 871-873
Authors:
GAQUIERE C
THERON D
BONTE B
CROSNIER Y
Citation: C. Gaquiere et al., 1W MM POWER PSEUDOMORPHIC HFET WITH OPTIMIZED RECESS TECHNOLOGY/, Electronics Letters, 30(11), 1994, pp. 904-906
Authors:
THERON D
BONTE B
GAQUIERE C
PLAYEZ E
CROSNIER Y
Citation: D. Theron et al., CHARACTERIZATION OF GAAS AND INGAAS DOUBLE-QUANTUM-WELL HETEROSTRUCTURE FETS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1935-1941
Risultati:
1-11
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