AAAAAA

   
Results: 1-22 |
Results: 22
WEAK MICROCAVITY EFFECTS IN ORGANIC LIGHT-EMITTING DEVICES
Authors: BULOVIC V KHALFIN VB GU G BURROWS PE GARBUZOV DZ FORREST SR
Citation: V. Bulovic et al., WEAK MICROCAVITY EFFECTS IN ORGANIC LIGHT-EMITTING DEVICES, Physical review. B, Condensed matter, 58(7), 1998, pp. 3730-3740
HIGH-EXTERNAL-QUANTUM-EFFICIENCY ORGANIC LIGHT-EMITTING DEVICES
Authors: GU G GARBUZOV DZ BURROWS PE VENKATESH S FORREST SR THOMPSON ME
Citation: G. Gu et al., HIGH-EXTERNAL-QUANTUM-EFFICIENCY ORGANIC LIGHT-EMITTING DEVICES, Optics letters, 22(6), 1997, pp. 396-398
HIGH-POWER HIGH-EFFICIENCY 0.98-MU-M WAVELENGTH INGAAS-(IN)GAAS(P)-INGAP BROADENED WAVE-GUIDE LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: GOKHALE MR DRIES JC STUDENKOV PV FORREST SR GARBUZOV DZ
Citation: Mr. Gokhale et al., HIGH-POWER HIGH-EFFICIENCY 0.98-MU-M WAVELENGTH INGAAS-(IN)GAAS(P)-INGAP BROADENED WAVE-GUIDE LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, IEEE journal of quantum electronics, 33(12), 1997, pp. 2266-2276
HIGH-POWER CONTINUOUS AND QUASI-CONTINUOUS WAVE INGAASP INP BROAD-WAVE-GUIDE SEPARATE CONFINEMENT-HETEROSTRUCTURE MULTIQUANTUM-WELL DIODE-LASERS/
Authors: GARBUZOV DZ MENNA RJ MARTINELLI RU ABELES JH CONNOLLY JC
Citation: Dz. Garbuzov et al., HIGH-POWER CONTINUOUS AND QUASI-CONTINUOUS WAVE INGAASP INP BROAD-WAVE-GUIDE SEPARATE CONFINEMENT-HETEROSTRUCTURE MULTIQUANTUM-WELL DIODE-LASERS/, Electronics Letters, 33(19), 1997, pp. 1635-1636
13.3W QUASI-CONTINUOUS OPERATION OF 0.99-MU-M WAVELENGTH SCH-QW IN GAAS GAAS/INGAP BROADENED WAVE-GUIDE LASERS/
Authors: GARBUZOV DZ GOKHALE MR DRIES JC STUDENKOV P MARTINELLI RU CONNOLLY JC FORREST SR
Citation: Dz. Garbuzov et al., 13.3W QUASI-CONTINUOUS OPERATION OF 0.99-MU-M WAVELENGTH SCH-QW IN GAAS GAAS/INGAP BROADENED WAVE-GUIDE LASERS/, Electronics Letters, 33(17), 1997, pp. 1462-1464
14.3 W QUASI-CONTINUOUS WAVE FRONT-FACET POWER FROM BROAD-WAVE-GUIDE AL-FREE 970 NM DIODE-LASERS
Authors: ALMUHANNA A MAWST LJ BOTEZ D GARBUZOV DZ MARTINELLI RU CONNOLLY JC
Citation: A. Almuhanna et al., 14.3 W QUASI-CONTINUOUS WAVE FRONT-FACET POWER FROM BROAD-WAVE-GUIDE AL-FREE 970 NM DIODE-LASERS, Applied physics letters, 71(9), 1997, pp. 1142-1144
4 W QUASI-CONTINUOUS-WAVE OUTPUT POWER FROM 2 MU-M ALGAASSB INGAASSB SINGLE-QUANTUM-WELL BROADENED WAVE-GUIDE LASER-DIODES/
Authors: GARBUZOV DZ MARTINELLI RU LEE H MENNA RJ YORK PK DIMARCO LA HARVEY MG MATARESE RJ NARAYAN SY CONNOLLY JC
Citation: Dz. Garbuzov et al., 4 W QUASI-CONTINUOUS-WAVE OUTPUT POWER FROM 2 MU-M ALGAASSB INGAASSB SINGLE-QUANTUM-WELL BROADENED WAVE-GUIDE LASER-DIODES/, Applied physics letters, 70(22), 1997, pp. 2931-2933
SIGNAL-PROCESSING STRATEGIES IN TUNABLE DIODE-LASER SPECTROMETERS
Authors: RIRIS H CARLISLE CB WARREN RE COOPER DE MARTINELLI RU MENNA RJ YORK PK GARBUZOV DZ LEE H ABELES JH MORRIS N CONNOLLY JC NARAYAN SY
Citation: H. Riris et al., SIGNAL-PROCESSING STRATEGIES IN TUNABLE DIODE-LASER SPECTROMETERS, SPECT ACT A, 52(8), 1996, pp. 843-849
ORGANIC FILMS DEPOSITED ON SI P-N-JUNCTIONS - ACCURATE MEASUREMENTS OF FLUORESCENCE INTERNAL EFFICIENCY, AND APPLICATION TO LUMINESCENT ANTIREFLECTION COATINGS
Authors: GARBUZOV DZ FORREST SR TSEKOUN AG BURROWS PE BULOVIC V THOMPSON ME
Citation: Dz. Garbuzov et al., ORGANIC FILMS DEPOSITED ON SI P-N-JUNCTIONS - ACCURATE MEASUREMENTS OF FLUORESCENCE INTERNAL EFFICIENCY, AND APPLICATION TO LUMINESCENT ANTIREFLECTION COATINGS, Journal of applied physics, 80(8), 1996, pp. 4644-4648
PHOTOLUMINESCENCE EFFICIENCY AND ABSORPTION OF ALUMINUM-TRIS-QUINOLATE (ALQ(3)) THIN-FILMS
Authors: GARBUZOV DZ BULOVIC V BURROWS PE FORREST SR
Citation: Dz. Garbuzov et al., PHOTOLUMINESCENCE EFFICIENCY AND ABSORPTION OF ALUMINUM-TRIS-QUINOLATE (ALQ(3)) THIN-FILMS, Chemical physics letters, 249(5-6), 1996, pp. 433-437
8 W CONTINUOUS-WAVE FRONT FACET POWER FROM BROAD-WAVE-GUIDE AL-FREE 980 NM DIODE-LASERS (VOL 69, PG 1532, 1996)
Authors: MAWST LJ BHATTACHARYA A LOPEZ J BOTEZ D GARBUZOV DZ DEMARCO L NABIEV RF JANSEN M FANG F NABIEV RF
Citation: Lj. Mawst et al., 8 W CONTINUOUS-WAVE FRONT FACET POWER FROM BROAD-WAVE-GUIDE AL-FREE 980 NM DIODE-LASERS (VOL 69, PG 1532, 1996), Applied physics letters, 69(22), 1996, pp. 3437-3437
ULTRALOW-LOSS BROADENED-WAVE-GUIDE HIGH-POWER 2 MU-M ALGAASS INGAASSB/GASB SEPARATE-CONFINEMENT QUANTUM-WELL LASERS/
Authors: GARBUZOV DZ MARTINELLI RU LEE H YORK PK MENNA RJ CONNOLLY JC NARAYAN SY
Citation: Dz. Garbuzov et al., ULTRALOW-LOSS BROADENED-WAVE-GUIDE HIGH-POWER 2 MU-M ALGAASS INGAASSB/GASB SEPARATE-CONFINEMENT QUANTUM-WELL LASERS/, Applied physics letters, 69(14), 1996, pp. 2006-2008
8-W CONTINUOUS-WAVE FRONT-FACET POWER FROM BROAD-WAVE-GUIDE AL-FREE 980 NM DIODE-LASERS
Authors: MAWST LJ BHATTACHARYA A LOPEZ J BOTEZ D GARBUZOV DZ DEMARCO L CONNOLLY JC JANSEN M FANG F NABIEV RF
Citation: Lj. Mawst et al., 8-W CONTINUOUS-WAVE FRONT-FACET POWER FROM BROAD-WAVE-GUIDE AL-FREE 980 NM DIODE-LASERS, Applied physics letters, 69(11), 1996, pp. 1532-1534
LOW-THRESHOLD, HIGH-POWER, 1.3-MU-M WAVELENGTH, INGAASP-INP ETCHED-FACET FOLDED-CAVITY SURFACE-EMITTING LASERS
Authors: CHAO CP GARBUZOV DZ SHIAU GJ FORREST SR DIMARCO LA HARVEY MG
Citation: Cp. Chao et al., LOW-THRESHOLD, HIGH-POWER, 1.3-MU-M WAVELENGTH, INGAASP-INP ETCHED-FACET FOLDED-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(8), 1995, pp. 836-838
2.7-MU-M INGAASSB ALGAASSB LASER-DIODES WITH CONTINUOUS-WAVE OPERATION UP TO -39-DEGREES-C/
Authors: GARBUZOV DZ MARTINELLI RU MENNA RJ YORK PK LEE H NARAYAN SY CONNOLLY JC
Citation: Dz. Garbuzov et al., 2.7-MU-M INGAASSB ALGAASSB LASER-DIODES WITH CONTINUOUS-WAVE OPERATION UP TO -39-DEGREES-C/, Applied physics letters, 67(10), 1995, pp. 1346-1348
ROOM-TEMPERATURE 2.78 MU-M ALGAASSB INGAASSB QUANTUM-WELL LASERS/
Authors: LEE H YORK PK MENNA RJ MARTINELLI RU GARBUZOV DZ NARAYAN SY CONNOLLY JC
Citation: H. Lee et al., ROOM-TEMPERATURE 2.78 MU-M ALGAASSB INGAASSB QUANTUM-WELL LASERS/, Applied physics letters, 66(15), 1995, pp. 1942-1944
CONTROLLING THE MODE COMPOSITION OF HIGH-POWER BURIED INGAASP GAAS LASERS WITH A WAVELENGTH OF 0.8-MU-M/
Authors: GARBUZOV DZ BORODITSKII ML ILINSKAYA ND LIVSHITZ DA MARINSKII DN RAFAILOV EU
Citation: Dz. Garbuzov et al., CONTROLLING THE MODE COMPOSITION OF HIGH-POWER BURIED INGAASP GAAS LASERS WITH A WAVELENGTH OF 0.8-MU-M/, Semiconductors, 28(2), 1994, pp. 191-194
INGAPINGAASP GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: ELIASHEVICH JD ELIASHEVICH I MOBARHAN K KOLEV E WANG LJ GARBUZOV DZ RAZEGHI M
Citation: Jd. Eliashevich et al., INGAPINGAASP GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, IEEE photonics technology letters, 6(2), 1994, pp. 132-134
STUDY OF RADIATIVE RECOMBINATION EFFICIENCY IN 28-180-ANGSTROM-WIDE ALGAAS GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: GARBUZOV DZ EVTIKHIEV VP KATSAVETS NI KOMISSAROV AB KUDRIK TE KUDRYASHOV IV KHALFIN VB BAUER RK ALFEROV ZI BIMBERG D
Citation: Dz. Garbuzov et al., STUDY OF RADIATIVE RECOMBINATION EFFICIENCY IN 28-180-ANGSTROM-WIDE ALGAAS GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 75(8), 1994, pp. 4152-4155
GENERATION OF ELECTRICALLY WAVELENGTH TUNABLE (DELTA-LAMBDA=40NM) SINGLEMODE LASER-PULSES FROM A 1.3 MU-M FABRY-PEROT LASER BY SELF-SEEDINGIN A FIBEROPTIC CONFIGURATION
Authors: HUHSE D SCHELL M KAESSNER J BIMBERG D TARASOV IS GORBACHOV AV GARBUZOV DZ
Citation: D. Huhse et al., GENERATION OF ELECTRICALLY WAVELENGTH TUNABLE (DELTA-LAMBDA=40NM) SINGLEMODE LASER-PULSES FROM A 1.3 MU-M FABRY-PEROT LASER BY SELF-SEEDINGIN A FIBEROPTIC CONFIGURATION, Electronics Letters, 30(2), 1994, pp. 157-158
CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/
Authors: GARBUZOV DZ GULAKOV AB KOCHNEV IV SHERNYAKOV YM KHALFIN VB YAVICH BS
Citation: Dz. Garbuzov et al., CHARACTERISTICS OF THE ELECTRIC-CURRENT DEPENDENCE OF THE EFFICIENCY OF SPONTANEOUS EMISSION FROM ALGAAS GAAS LASER-DIODES WITH A SINGLE-QUANTUM-WELL/, Semiconductors, 27(10), 1993, pp. 946-949
POWER SUPERMODE OVERGREW INGAASP-GAAS SEP ARATE-CONFINEMENT LASERS
Authors: BORODITSKII ML GARBUZOV DZ GORBACHEV AY ILINSKAYA ND LIVSHITS DA MARINSKII DN RAFAILOV EU STANKEVICH AL TARASOV IS
Citation: Ml. Boroditskii et al., POWER SUPERMODE OVERGREW INGAASP-GAAS SEP ARATE-CONFINEMENT LASERS, Pis'ma v Zurnal tehniceskoj fiziki, 19(21), 1993, pp. 78-84
Risultati: 1-22 |