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Results: 26-50/94
Authors:
HALIMAOUI A
BRIERE O
GHIBAUDO G
Citation: A. Halimaoui et al., QUASI-BREAKDOWN IN ULTRATHIN GATE DIELECTRICS, Microelectronic engineering, 36(1-4), 1997, pp. 157-160
Authors:
KIES R
GHIBAUDO G
PANANAKAKIS G
Citation: R. Kies et al., IMPACT OF OXIDE CHARGE BUILDUP ON FOWLER-NORDHEIM TUNNELING CURRENT CHARACTERISTICS IN A MOS STRUCTURE, Microelectronic engineering, 36(1-4), 1997, pp. 267-270
Authors:
BRIERE O
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., BREAKDOWN CHARACTERISTICS OF ULTRA-THIN GATE OXIDES FOLLOWING FIELD AND TEMPERATURE STRESSES, Solid-state electronics, 41(7), 1997, pp. 981-985
Authors:
BRIERE O
BARLA K
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS, Solid-state electronics, 41(7), 1997, pp. 987-990
Authors:
VINCENT E
PAPADAS C
GHIBAUDO G
Citation: E. Vincent et al., TEMPERATURE-DEPENDENCE OF CHARGE BUILDUP MECHANISMS AND BREAKDOWN PHENOMENA IN THIN OXIDES UNDER FOWLER-NORDHEIM INJECTION, Solid-state electronics, 41(7), 1997, pp. 1001-1004
Authors:
KIES R
GHIBAUDO G
PANANAKAKIS G
REIMBOLD G
Citation: R. Kies et al., TEMPERATURE-DEPENDENCE OF TRANSPORT AND TRAPPING PROPERTIES OF OXIDE-NITRIDE-OXIDE DIELECTRIC FILMS, Solid-state electronics, 41(7), 1997, pp. 1041-1049
Authors:
MORFOULI P
GHIBAUDO G
VOGEL EM
HILL WL
MISRA V
MCLARTY PK
WORTMAN JJ
Citation: P. Morfouli et al., ELECTRICAL AND RELIABILITY PROPERTIES OF THIN SILICON OXINITRIDE DIELECTRICS FORMED BY LOW-PRESSURE RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Solid-state electronics, 41(7), 1997, pp. 1051-1055
Authors:
GHIBAUDO G
BALESTRA F
Citation: G. Ghibaudo et F. Balestra, LOW-TEMPERATURE CHARACTERIZATION OF SILICON CMOS DEVICES, Microelectronics and reliability, 37(9), 1997, pp. 1353-1366
Authors:
JAHAN C
BARLA K
GHIBAUDO G
Citation: C. Jahan et al., INVESTIGATION OF STRESS-INDUCED LEAKAGE CURRENT IN CMOS STRUCTURES WITH ULTRA-THIN GATE DIELECTRICS, Microelectronics and reliability, 37(10-11), 1997, pp. 1529-1532
Authors:
BOUTCHACHA T
GHIBAUDO G
GUEGAN G
SKOTNICKI T
Citation: T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.18-MU-M SI CMOS TRANSISTORS, Microelectronics and reliability, 37(10-11), 1997, pp. 1599-1602
Authors:
LLINARES P
NIEL S
GHIBAUDO G
VENDRAME L
CHROBOCZEK JA
Citation: P. Llinares et al., RETARDING EFFECT OF SURFACE BASE COMPENSATION ON DEGRADATION OF NOISECHARACTERISTICS OF BICMOS BJTS, Microelectronics and reliability, 37(10-11), 1997, pp. 1603-1606
Authors:
BOUTCHACHA T
GHIBAUDO G
GUEGAN G
HAOND M
Citation: T. Boutchacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF 0.25 MU-M SI CMOS TRANSISTORS, Journal of non-crystalline solids, 216, 1997, pp. 192-197
Authors:
PANANAKAKIS C
GHIBAUDO G
PAPADAS C
VINCENT E
KIES R
Citation: C. Pananakakis et al., GENERALIZED TRAPPING KINETIC-MODEL FOR THE OXIDE DEGRADATION AFTER FOWLER-NORDHEIM UNIFORM GATE STRESS, Journal of applied physics, 82(5), 1997, pp. 2548-2557
Authors:
LLINARES P
CELI D
ROUXDITBUISSON O
GHIBAUDO G
CHROBOCZEK JA
Citation: P. Llinares et al., DIMENSION SCALING OF 1 F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS/, Journal of applied physics, 82(5), 1997, pp. 2671-2675
Authors:
LLINARES P
GHIBAUDO G
CHROBOCZEK JA
Citation: P. Llinares et al., ON NOISE SOURCES IN HOT ELECTRON-DEGRADED BIPOLAR JUNCTION TRANSISTORS, Journal of applied physics, 82(5), 1997, pp. 2676-2679
Authors:
SCARPA A
PACCAGNELLA A
MONTERA F
GHIBAUDO G
PANANAKAKIS G
GHIDINI G
FUOCHI PG
Citation: A. Scarpa et al., IONIZING-RADIATION INDUCED LEAKAGE CURRENT ON ULTRA-THIN GATE OXIDES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1818-1825
Authors:
SCARPA A
GHIBAUDO G
PANANAKAKIS G
PACCAGNELLA A
GHIDINI G
Citation: A. Scarpa et al., RELIABILITY EXTRAPOLATION MODEL FOR STRESS-INDUCED-LEAKAGE CURRENT INTHIN SILICON-OXIDES, Electronics Letters, 33(15), 1997, pp. 1342-1344
Authors:
GHIBAUDO G
BALESTRA F
Citation: G. Ghibaudo et F. Balestra, CHARACTERIZATION AND MODELING OF SILICON CMOS TRANSISTOR OPERATION ATLOW-TEMPERATURE, Journal de physique. IV, 6(C3), 1996, pp. 3-11
Authors:
SZELAG B
BALESTRA F
GHIBAUDO G
DUTOIT M
Citation: B. Szelag et al., GATE AND SUBSTRATE CURRENTS IN DEEP-SUBMICRON MOSFETS, Journal de physique. IV, 6(C3), 1996, pp. 61-66
Authors:
MORFOULI P
GHIBAUDO G
OUISSE T
VOGEL E
HILL W
MISRA V
MCLARTY P
WORTMAN JJ
Citation: P. Morfouli et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF N-MOSFET AND P-MOSFET WITH ULTRATHIN OXYNITRIDE GATE FILMS, IEEE electron device letters, 17(8), 1996, pp. 395-397
Authors:
VINCENT E
PAPADAS C
RIVA C
PIO F
GHIBAUDO G
Citation: E. Vincent et al., RELIABILITY ISSUES OF FURNACE NITRIDATED OXIDES PREPARED WITH REDUCEDTHERMAL BUDGET IN N2O AMBIENT, Solid-state electronics, 39(7), 1996, pp. 1051-1054
Authors:
BAUZA D
GHIBAUDO G
Citation: D. Bauza et G. Ghibaudo, ANALYTICAL STUDY OF THE CONTRIBUTION OF FAST AND SLOW OXIDE TRAPS TO THE CHARGE-PUMPING CURRENT IN MOS STRUCTURES, Solid-state electronics, 39(4), 1996, pp. 563-570
Authors:
GHIBAUDO G
GRANDESSO P
MASSARI F
UCHMAN A
Citation: G. Ghibaudo et al., USE OF TRACE FOSSILS IN DELINEATING SEQUENCE STRATIGRAPHIC SURFACES (TERTIARY VENETIAN BASIN, NORTHEASTERN ITALY), Palaeogeography, palaeoclimatology, palaeoecology, 120(3-4), 1996, pp. 261-279
Authors:
KIES R
EGILSSON T
GHIBAUDO G
PANANAKAKIS G
Citation: R. Kies et al., ASSESSMENT OF OXIDE CHARGE-DENSITY AND CENTROID FROM FOWLER-NORDHEIM DERIVATIVE CHARACTERISTICS IN MOS STRUCTURES AFTER UNIFORM GATE STRESS, Microelectronics and reliability, 36(11-12), 1996, pp. 1619-1622
Authors:
VINCENT E
REVIL N
PAPADAS C
GHIBAUDO G
Citation: E. Vincent et al., ELECTRIC-FIELD DEPENDENCE OF TDDB ACTIVATION-ENERGY IN ULTRATHIN OXIDES, Microelectronics and reliability, 36(11-12), 1996, pp. 1643-1646