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Results: 1-24 |
Results: 24
ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS
Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R PELAEZ R BARBOLLA J MARTIN JM GONZALEZDIAZ G
Citation: L. Quintanilla et al., ELECTRICAL CHARACTERIZATION OF DEEP LEVELS EXISTING IN MG-SI-IMPLANTED AND MG-P-SI-IMPLANTED P(+)N INP JUNCTIONS, Semiconductor science and technology, 13(4), 1998, pp. 389-393
DEPOSITION OF LOW-TEMPERATURE SI-BASED INSULATORS BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD
Authors: GARCIA S MARTIN JM MARTIL I FERNANDEZ M GONZALEZDIAZ G
Citation: S. Garcia et al., DEPOSITION OF LOW-TEMPERATURE SI-BASED INSULATORS BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD, Thin solid films, 317(1-2), 1998, pp. 116-119
DEPENDENCE OF THE PHYSICAL-PROPERTIES OF SINX-H FILMS DEPOSITED BY THE ECR PLASMA METHOD ON THE DISCHARGE SIZE
Authors: GARCIA S MARTIN JM MARTIL I GONZALEZDIAZ G
Citation: S. Garcia et al., DEPENDENCE OF THE PHYSICAL-PROPERTIES OF SINX-H FILMS DEPOSITED BY THE ECR PLASMA METHOD ON THE DISCHARGE SIZE, Thin solid films, 315(1-2), 1998, pp. 22-28
INFLUENCE OF RAPID THERMAL ANNEALING PROCESSES ON THE PROPERTIES OF SINX-H FILMS DEPOSITED BY THE ELECTRON-CYCLOTRON-RESONANCE METHOD
Authors: MARTINEZ FL MARTIL I GONZALEZDIAZ G SELLE B SIEBER I
Citation: Fl. Martinez et al., INFLUENCE OF RAPID THERMAL ANNEALING PROCESSES ON THE PROPERTIES OF SINX-H FILMS DEPOSITED BY THE ELECTRON-CYCLOTRON-RESONANCE METHOD, Journal of non-crystalline solids, 230, 1998, pp. 523-527
EXPERIMENTAL-VERIFICATION OF THE PHYSICS AND STRUCTURE OF THE BIPOLARJUNCTION TRANSISTOR
Authors: MARTIL I MARTIN JM GARCIA S GONZALEZDIAZ G
Citation: I. Martil et al., EXPERIMENTAL-VERIFICATION OF THE PHYSICS AND STRUCTURE OF THE BIPOLARJUNCTION TRANSISTOR, IEEE transactions on education, 41(3), 1998, pp. 224-228
STUDY OF SI-IMPLANTED AND ANNEALED INP BY MEANS OF RAMAN-SPECTROSCOPY()
Authors: CUSCO R IBANEZ J BLANCO N GONZALEZDIAZ G ARTUS L
Citation: R. Cusco et al., STUDY OF SI-IMPLANTED AND ANNEALED INP BY MEANS OF RAMAN-SPECTROSCOPY(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(4), 1997, pp. 627-632
RAMAN-SCATTERING CRITERIA FOR CHARACTERIZATION OF ANNEAL-RESTORED ZINC BLENDE SINGLE-CRYSTALS - APPLICATION TO SI-IMPLANTED INP()
Authors: ARTUS L CUSCO R IBANEZ J MARTIN JM GONZALEZDIAZ G
Citation: L. Artus et al., RAMAN-SCATTERING CRITERIA FOR CHARACTERIZATION OF ANNEAL-RESTORED ZINC BLENDE SINGLE-CRYSTALS - APPLICATION TO SI-IMPLANTED INP(), Journal of applied physics, 82(8), 1997, pp. 3736-3739
DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/
Authors: QUINTANILLA L DUENAS S CASTAN E PINACHO R BARBOLLA J MARTIN JM GONZALEZDIAZ G
Citation: L. Quintanilla et al., DEEP LEVELS IN P(-N JUNCTIONS FABRICATED BY RAPID THERMAL ANNEALING OF MG OR MG())P IMPLANTED INP/, Journal of applied physics, 81(7), 1997, pp. 3143-3150
EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/
Authors: DUENAS S PELAEZ R CASTAN E PINACHO R QUINTANILLA L BARBOLLA J MARTIL I GONZALEZDIAZ G
Citation: S. Duenas et al., EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 826-828
PROPERTIES OF A-SINX-H FILMS DEPOSITED AT ROOM-TEMPERATURE BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD
Authors: GARCIA S MARTIN JM FERNANDEZ M MARTIL I GONZALEZDIAZ G
Citation: S. Garcia et al., PROPERTIES OF A-SINX-H FILMS DEPOSITED AT ROOM-TEMPERATURE BY THE ELECTRON-CYCLOTRON-RESONANCE PLASMA METHOD, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(3), 1996, pp. 487-502
USE OF KRAMERS-KRONIG TRANSFORMS FOR THE TREATMENT OF ADMITTANCE SPECTROSCOPY DATA OF P-N-JUNCTIONS CONTAINING TRAPS
Authors: LEON C MARTIN JM SANTAMARIA J SKARP J GONZALEZDIAZ G SANCHEZQUESADA F
Citation: C. Leon et al., USE OF KRAMERS-KRONIG TRANSFORMS FOR THE TREATMENT OF ADMITTANCE SPECTROSCOPY DATA OF P-N-JUNCTIONS CONTAINING TRAPS, Journal of applied physics, 79(10), 1996, pp. 7830-7836
DC CHARACTERIZATION OF FULLY ION-IMPLANTED P-N-JUNCTIONS INTO SEMIINSULATING INP
Authors: MARTIN JM SANCHEZ SG MARTIL I GONZALEZDIAZ G
Citation: Jm. Martin et al., DC CHARACTERIZATION OF FULLY ION-IMPLANTED P-N-JUNCTIONS INTO SEMIINSULATING INP, I.E.E.E. transactions on electron devices, 43(3), 1996, pp. 396-401
ANALYSIS OF THE OXYGEN CONTAMINATION PRESENT IN SINX FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE
Authors: GARCIA S MARTIN JM FERNANDEZ M MARTIL I GONZALEZDIAZ G
Citation: S. Garcia et al., ANALYSIS OF THE OXYGEN CONTAMINATION PRESENT IN SINX FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 826-830
GROWTH OF CHALCOPYRITE CU(IN,GA)SE-2 CUIN3SE5 ABSORBERS BY RADIO-FREQUENCY SPUTTERING/
Authors: HERNANDEZROJAS JL MARTIL I SANTAMARIA J GONZALEZDIAZ G SANCHEZQUESADA F
Citation: Jl. Hernandezrojas et al., GROWTH OF CHALCOPYRITE CU(IN,GA)SE-2 CUIN3SE5 ABSORBERS BY RADIO-FREQUENCY SPUTTERING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1083-1087
ELECTRICAL AND OPTICAL CHARACTERIZATION OF MG, MG P, AND MG/AR IMPLANTS INTO INP-FE/
Authors: MARTIN JM GARCIA S CALLE F MARTIL I GONZALEZDIAZ G
Citation: Jm. Martin et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF MG, MG P, AND MG/AR IMPLANTS INTO INP-FE/, Journal of electronic materials, 24(1), 1995, pp. 59-67
ELECTRICAL AND OPTICAL CHARACTERIZATION OF SILICON AND SILICON PHOSPHORUS IMPLANTS IN INP DOPED WITH IRON
Authors: MARTIN JM GARCIA S MARTIL I GONZALEZDIAZ G CUSCO R ARTUS L
Citation: Jm. Martin et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF SILICON AND SILICON PHOSPHORUS IMPLANTS IN INP DOPED WITH IRON, Materials science and technology, 11(11), 1995, pp. 1203-1206
INFLUENCE OF THE DEPOSITION PARAMETERS ON THE BONDING AND OPTICAL-PROPERTIES OF SINX ECR FILMS
Authors: GARCIA S MARTIN JM MARTIL I FERNANDEZ M IBORRA E GONZALEZDIAZ G
Citation: S. Garcia et al., INFLUENCE OF THE DEPOSITION PARAMETERS ON THE BONDING AND OPTICAL-PROPERTIES OF SINX ECR FILMS, Journal of non-crystalline solids, 187, 1995, pp. 329-333
DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP
Authors: MARTIN JM GARCIA S MARTIL I GONZALEZDIAZ G CASTAN E DUENAS S
Citation: Jm. Martin et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY AND ELECTRICAL CHARACTERIZATION OF ION-IMPLANTED P-N-JUNCTIONS INTO UNDOPED INP, Journal of applied physics, 78(9), 1995, pp. 5325-5330
CONTROL-SYSTEM FOR A 300-KV ION IMPLANTER
Authors: MARTIN JM GONZALEZDIAZ G
Citation: Jm. Martin et G. Gonzalezdiaz, CONTROL-SYSTEM FOR A 300-KV ION IMPLANTER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 331-337
UP TO 5TH-ORDER RAMAN-SCATTERING OF INP UNDER NONRESONANT CONDITIONS
Authors: ARTUS L CUSCO R MARTIN JM GONZALEZDIAZ G
Citation: L. Artus et al., UP TO 5TH-ORDER RAMAN-SCATTERING OF INP UNDER NONRESONANT CONDITIONS, Physical review. B, Condensed matter, 50(16), 1994, pp. 11552-11555
OPTICAL CHARACTERIZATION OF SILICON-NITRIDE FILMS DEPOSITED BY ECR-CVD
Authors: GARCIA S MARTIN JM MARTIL I GONZALEZDIAZ G
Citation: S. Garcia et al., OPTICAL CHARACTERIZATION OF SILICON-NITRIDE FILMS DEPOSITED BY ECR-CVD, Vacuum, 45(10-11), 1994, pp. 1027-1028
STOICHIOMETRY CONTROL OVER A WIDE COMPOSITION RANGE OF SPUTTERED CUGAXIN(1-X)SE2
Authors: HERNANDEZROJAS JL LUCIA ML MARTIL I GONZALEZDIAZ G SANTAMARIA J SANCHEZQUESADA F
Citation: Jl. Hernandezrojas et al., STOICHIOMETRY CONTROL OVER A WIDE COMPOSITION RANGE OF SPUTTERED CUGAXIN(1-X)SE2, Applied physics letters, 64(10), 1994, pp. 1239-1241
EMISSION-LINE INTENSITIES IN AN RF-SPUTTERING GLOW-DISCHARGE SYSTEM
Authors: HERNANDEZROJAS JL LUCIA ML SANTAMARIA J GONZALEZDIAZ G MARTIL I SANCHEZQUESADA F
Citation: Jl. Hernandezrojas et al., EMISSION-LINE INTENSITIES IN AN RF-SPUTTERING GLOW-DISCHARGE SYSTEM, Thin solid films, 228(1-2), 1993, pp. 133-136
OPTICAL-PROPERTIES OF POLYCRYSTALLINE CD1-XMNXTE
Authors: GUERRERO H ESCUDERO JL BERNABEU E HERNANDEZROJAS JL GONZALEZDIAZ G
Citation: H. Guerrero et al., OPTICAL-PROPERTIES OF POLYCRYSTALLINE CD1-XMNXTE, Journal of applied physics, 74(5), 1993, pp. 3459-3463
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