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Results: 1-25/36
Authors:
Bandiera, L
Cester, A
Paccagnella, A
Ghidini, G
Bloom, I
Citation: L. Bandiera et al., Detrended fluctuation analysis of the soft breakdown current, MICROEL ENG, 59(1-4), 2001, pp. 49-53
Authors:
Brazzelli, D
Ghidini, G
Crivelli, B
Zonca, R
Bersani, M
Citation: D. Brazzelli et al., High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications, SOL ST ELEC, 45(8), 2001, pp. 1271-1278
Authors:
Cester, A
Paccagnella, A
Ghidini, G
Citation: A. Cester et al., Time decay of stress induced leakage current in thin gate oxides by low-field electron injection, SOL ST ELEC, 45(8), 2001, pp. 1345-1353
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Martinelli, A
Ghidini, G
Citation: D. Ielmini et al., A recombination- and trap-assisted tunneling model for stress-induced leakage current, SOL ST ELEC, 45(8), 2001, pp. 1361-1369
Authors:
Galbiati, N
Ghidini, G
Cremonesi, C
Larcher, L
Citation: N. Galbiati et al., Impact of the As dose in 0.35 mu m EEPROM technology: characterization andmodeling, MICROEL REL, 41(7), 2001, pp. 999-1002
Authors:
Brazzelli, D
Ghidini, G
Riva, C
Citation: D. Brazzelli et al., Optimization of WSi2 by SiH4CVD: impact on oxide quality, MICROEL REL, 41(7), 2001, pp. 1003-1006
Authors:
Candelori, A
Paccagnella, A
Raggi, G
Wyss, J
Bisello, D
Ghidini, G
Citation: A. Candelori et al., High energy Si ion irradiation effects on 10 nm thick oxide MOS capacitors, J NON-CRYST, 280(1-3), 2001, pp. 193-201
Authors:
Vedda, A
Martini, M
Spinolo, G
Crivelli, B
Cazzaniga, F
Ghidini, G
Vitali, ME
Citation: A. Vedda et al., Phosphorous implantation in silicon through thin SiO2 layers: Oxide damageand postoxidation thermal treatments, J APPL PHYS, 90(10), 2001, pp. 5013-5017
Authors:
Candelori, A
Ceschia, M
Paccagnella, A
Wyss, J
Bisello, D
Ghidini, G
Citation: A. Candelori et al., Thin oxide degradation after high-energy ion irradiation, IEEE NUCL S, 48(5), 2001, pp. 1735-1743
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
DiMaria, DJ
Ghidini, G
Citation: D. Ielmini et al., A detailed investigation of the quantum yield experiment, IEEE DEVICE, 48(8), 2001, pp. 1696-1702
Authors:
Larcher, L
Pavan, P
Pellizzer, F
Ghidini, G
Citation: L. Larcher et al., A new model of gate capacitance as a simple tool to extract MOS parameters, IEEE DEVICE, 48(5), 2001, pp. 935-945
Authors:
Larcher, L
Paccagnella, A
Ghidini, G
Citation: L. Larcher et al., Gate current in ultrathin MOS capacitors: A new model of tunnel current, IEEE DEVICE, 48(2), 2001, pp. 271-278
Authors:
Larcher, L
Paccagnella, A
Ghidini, G
Citation: L. Larcher et al., A model of the stress induced leakage current in gate oxides, IEEE DEVICE, 48(2), 2001, pp. 285-288
Authors:
Polignano, ML
Ghidini, G
Cazzaniga, F
Ceresara, L
Illuzzi, F
Padovani, B
Pellizzer, F
Citation: Ml. Polignano et al., Thin oxide reliability and gettering efficiency in advanced silicon substrates, MAT SCI E B, 73(1-3), 2000, pp. 99-105
Authors:
Pirovano, A
Lacaita, AL
Ghidini, G
Tallarida, G
Citation: A. Pirovano et al., On the correlation between surface roughness and inversion layer mobility in Si-MOSFET's, IEEE ELEC D, 21(1), 2000, pp. 34-36
Authors:
Brazzelli, D
Ghidini, G
Crivelli, B
Zonca, R
Bersani, M
Xing, GC
Miner, GE
D'Astici, N
Kuppurao, S
Lopes, D
Citation: D. Brazzelli et al., Electrical characterisation of oxides grown in different RTP ambients, MICROEL REL, 40(4-5), 2000, pp. 641-644
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Martinelli, A
Ghidini, G
Citation: D. Ielmini et al., A recombination model for transient and stationary stress-induced leakage current, MICROEL REL, 40(4-5), 2000, pp. 703-706
Authors:
Cester, A
Paccagnella, A
Ghidini, G
Citation: A. Cester et al., Time decay of stress induced leakage current in thin gate oxides by low-field electron injection, MICROEL REL, 40(4-5), 2000, pp. 715-718
Authors:
Scarpa, A
Riess, P
Ghibaudo, G
Paccagnella, A
Pananakakis, G
Ceschia, M
Ghidini, G
Citation: A. Scarpa et al., Electrically and radiation induced leakage currents in thin oxides, MICROEL REL, 40(1), 2000, pp. 57-67
Authors:
Ceschia, M
Paccagnella, A
Turrini, M
Candelori, A
Ghidini, G
Wyss, J
Citation: M. Ceschia et al., Heavy ion irradiation of thin gate oxides, IEEE NUCL S, 47(6), 2000, pp. 2648-2655
Authors:
Ceschia, M
Paccagnella, A
Sandrin, S
Ghidini, G
Wyss, J
Lavale, M
Flament, O
Citation: M. Ceschia et al., Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation, IEEE NUCL S, 47(3), 2000, pp. 566-573
Authors:
Cester, A
Paccagnella, A
Ghidini, G
Citation: A. Cester et al., Pulsed voltage stress on thin oxides, ELECTR LETT, 36(15), 2000, pp. 1319-1320
Authors:
Spinelli, AS
Lacaita, AL
Rigamonti, M
Ghidini, G
Citation: As. Spinelli et al., Experimental method for the determination of the energy distribution of stress-induced oxide traps, IEEE ELEC D, 20(3), 1999, pp. 106-108
Authors:
Spinelli, AS
Lacaita, AL
Rigamonti, M
Ielmini, D
Ghidini, G
Citation: As. Spinelli et al., Separation of electron and hole traps by transient current analysis, MICROEL ENG, 48(1-4), 1999, pp. 151-154
Authors:
Scarpa, A
Pananakakis, G
Ghibaudo, G
Paccagnella, A
Ghidini, G
Citation: A. Scarpa et al., On the degradation kinetics of thin oxide layers, SOL ST ELEC, 43(2), 1999, pp. 221-227