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Results: 1-25/64
Authors:
Gil, B
Lusson, A
Sallet, V
Said-Hassani, SA
Triboulet, R
Bigenwald, P
Citation: B. Gil et al., Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers, JPN J A P 2, 40(10B), 2001, pp. L1089-L1092
Authors:
Datka, J
Gil, B
Domagala, T
Gora-Marek, K
Citation: J. Datka et al., Homogeneous OH groups in dealuminated HY zeolite studied by IR spectroscopy, MICROP M M, 47(1), 2001, pp. 61-66
Authors:
Nelson, DK
Yacobson, MA
Kagan, VD
Gil, B
Grandjean, N
Beaumont, B
Massies, J
Gibart, P
Citation: Dk. Nelson et al., Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells, PHYS SOL ST, 43(12), 2001, pp. 2321-2327
Authors:
Nelson, D
Gil, B
Jacobson, MA
Kagan, VD
Grandjean, N
Beaumont, B
Massies, J
Gibart, P
Citation: D. Nelson et al., Impact ionization of excitons in an electric field in GaN, J PHYS-COND, 13(32), 2001, pp. 7043-7052
Authors:
Viennois, R
Taliercio, T
Potin, V
Errebbahi, A
Gil, B
Charar, S
Haidoux, A
Tedenac, JC
Citation: R. Viennois et al., Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties, MAT SCI E B, 82(1-3), 2001, pp. 45-49
Authors:
Potin, V
Gil, B
Charar, S
Ruterana, P
Nouet, G
Citation: V. Potin et al., HREM study of basal stacking faults in GaN layers grown over sapphire substrate, MAT SCI E B, 82(1-3), 2001, pp. 114-116
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Massies, J
Grzegory, I
Porowsky, S
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells, MAT SCI E B, 82(1-3), 2001, pp. 140-142
Authors:
Taliercio, T
Lefebvre, P
Morel, A
Gallart, M
Allegre, J
Gil, B
Mathieu, H
Grandjean, N
Massies, J
Citation: T. Taliercio et al., Optical properties of self-assembled InGaN/GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 151-155
Authors:
Morel, A
Taliercio, T
Lefebvre, P
Gallart, M
Gil, B
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: A. Morel et al., Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 173-177
Authors:
Bigenwald, P
Kavokin, A
Christol, P
Gil, B
Citation: P. Bigenwald et al., Renormalization of the exciton parameters in piezoelectric nitride quantumstructures: the effects of injection intensity and temperature, MAT SCI E B, 82(1-3), 2001, pp. 185-187
Authors:
O'Donnell, KP
Martin, RW
Trager-Cowan, C
White, ME
Esona, K
Deatcher, C
Middleton, PG
Jacobs, K
Van der Stricht, W
Merlet, C
Gil, B
Vantomme, A
Mosselmans, JFW
Citation: Kp. O'Donnell et al., The dependence of the optical energies on InGaN composition, MAT SCI E B, 82(1-3), 2001, pp. 194-196
Authors:
Morel, A
Lefebvre, P
Taliercio, T
Gallart, M
Gil, B
Mathieu, H
Citation: A. Morel et al., Donor binding energies in group III-nitride-based quantum wells: influenceof internal electric fields, MAT SCI E B, 82(1-3), 2001, pp. 221-223
Authors:
Datka, J
Gil, B
Citation: J. Datka et B. Gil, The study of heterogeneity of OH groups in zeolites by comparing the half-width of IR band of hydroxyls interacting with adsorbed molecules, CATAL TODAY, 70(1-3), 2001, pp. 131-138
Authors:
Lefebvre, P
Taliercio, T
Kalliakos, S
Morel, A
Zhang, XB
Gallart, M
Bretagnon, T
Gil, B
Grandjean, N
Damilano, B
Massies, J
Citation: P. Lefebvre et al., Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect, PHYS ST S-B, 228(1), 2001, pp. 65-72
Authors:
Ochalski, TJ
Gil, B
Bigenwald, P
Bugajski, M
Wojcik, A
Lefebvre, P
Taliercio, T
Grandjean, N
Massies, J
Citation: Tj. Ochalski et al., Dual contribution to the Stokes shift in InGaN-GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 111-114
Authors:
Gil, B
Citation: B. Gil, Oscillator strengths of A, B, and C excitons in ZnO films - art. no. 201310, PHYS REV B, 6420(20), 2001, pp. 1310
Authors:
Zamfirescu, M
Gil, B
Grandjean, N
Malpuech, G
Kavokin, A
Bigenwald, P
Massies, J
Citation: M. Zamfirescu et al., Extremely sharp dependence of the exciton oscillator strength on quantum-well width in the GaN/AlxGa1-xN system: The polarization field effect - art.no. 121304, PHYS REV B, 6412(12), 2001, pp. 1304
Authors:
Bigenwald, P
Kavokin, A
Gil, B
Lefebvre, P
Citation: P. Bigenwald et al., Exclusion principle and screening of excitons in GaN/AlxGa1-xN quantum wells - art. no. 035315, PHYS REV B, 6303(3), 2001, pp. 5315
Authors:
Taliercio, T
Gallart, M
Lefebvre, P
Morel, A
Gil, B
Allegre, J
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
Authors:
Kavokin, A
Gil, B
Citation: A. Kavokin et B. Gil, Papers presented at the International Workshop on Light-Matter Coupling inNitrides, St. Nectaire, France, October 8-12, 2000 - Preface, PHYS ST S-A, 183(1), 2001, pp. 3-4
Authors:
Gallart, M
Lefebvre, P
Morel, A
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: M. Gallart et al., Reduction of carrier in-plane mobility in group-III nitride based quantum wells: The role of internal electric fields, PHYS ST S-A, 183(1), 2001, pp. 61-66
Authors:
Gil, B
Bigenwald, P
Citation: B. Gil et P. Bigenwald, Exciton binding energies and oscillator strengths in GaAsN-GaAs quantum wells, PHYS ST S-A, 183(1), 2001, pp. 111-116
Authors:
Bigenwald, P
Gil, B
Kavokin, A
Christol, P
Citation: P. Bigenwald et al., Temperature induced enhancement of the exciton binding energy in nitride quantum structures, PHYS ST S-A, 183(1), 2001, pp. 125-128
Authors:
Datka, J
Gil, B
Citation: J. Datka et B. Gil, Heterogeneity of OH groups in HZSM-5 zeolites. IR studies of ammonia adsorption and desorption, J MOL STRUC, 596, 2001, pp. 41-45
Authors:
Gil, B
Morel, A
Taliercio, T
Lefebvre, P
Foxon, CT
Harrison, I
Winser, AJ
Novikov, SV
Citation: B. Gil et al., Carrier relaxation dynamics for As defects in GaN, APPL PHYS L, 79(1), 2001, pp. 69-71