AAAAAA

   
Results: 1-23 |
Results: 23
Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
Authors: Goldys, EM Godlewski, M Paskova, T Pozina, G Monemar, B
Citation: Em. Goldys et al., Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS I J N S, 6(1), 2001, pp. 1-6
Mechanism of radiative Mn2+ intra-shell recombination in bulk ZnMnS
Authors: Ivanov, VY Godlewski, M Yatsunenko, S Khachapuridze, A Li, MS Golacki, Z
Citation: Vy. Ivanov et al., Mechanism of radiative Mn2+ intra-shell recombination in bulk ZnMnS, ACT PHY P A, 100(3), 2001, pp. 351-355
Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures
Authors: Godlewski, M Goldys, EM Butcher, KSA Phillips, MR Pakula, K Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures, PHYS ST S-B, 228(1), 2001, pp. 179-182
Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system
Authors: Godlewski, M Mackowski, S Karczewski, G Goldys, EM Phillips, MR
Citation: M. Godlewski et al., Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system, SEMIC SCI T, 16(6), 2001, pp. 493-496
Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer
Authors: Godlewski, M Goldys, EM Phillips, MR Pakula, K Baranowski, JM
Citation: M. Godlewski et al., Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaNbuffer layer, APPL SURF S, 177(1-2), 2001, pp. 22-31
Nonuniform defect distribution in GaN thin films examined by cathodoluminescence
Authors: Goldys, EM Godlewski, M
Citation: Em. Goldys et M. Godlewski, Nonuniform defect distribution in GaN thin films examined by cathodoluminescence, APPL PHYS A, 70(3), 2000, pp. 329-331
Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors
Authors: Godlewski, M Zakrzewski, AJ Ivanov, VY
Citation: M. Godlewski et al., Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors, J ALLOY COM, 300, 2000, pp. 23-31
Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures
Authors: Godlewski, M Goldys, EM Phillips, MR Langer, R Barski, A
Citation: M. Godlewski et al., Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures, J MATER RES, 15(2), 2000, pp. 495-501
Microwave-enhanced exciton delocalisation in low-dimensional CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures
Authors: Godlewski, M Ivanov, VY Khachapuridze, A
Citation: M. Godlewski et al., Microwave-enhanced exciton delocalisation in low-dimensional CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures, B POL CHEM, 48(4), 2000, pp. 347-354
Surface morphology of cubic and wurtzite GaN films
Authors: Goldys, EM Godlewski, M Langer, R Barski, A
Citation: Em. Goldys et al., Surface morphology of cubic and wurtzite GaN films, APPL SURF S, 153(2-3), 2000, pp. 143-149
Exciton properties in quantum well structures of CdTe/CdMnTe
Authors: Godlewski, M
Citation: M. Godlewski, Exciton properties in quantum well structures of CdTe/CdMnTe, OPT APPL, 30(2-3), 2000, pp. 463-475
Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers
Authors: Godlewski, M Goldys, EM Phillips, MR
Citation: M. Godlewski et al., Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers, J LUMINESC, 87-9, 2000, pp. 1155-1157
Sphalerite-type (Cd, Zn)S films by atomic layer epitaxy in the gas flow
Authors: Szczerbakow, A Bak-Misiuk, J Dynowska, E Ghali, M Godlewski, M Ivanov, VY Swiatek, K
Citation: A. Szczerbakow et al., Sphalerite-type (Cd, Zn)S films by atomic layer epitaxy in the gas flow, J CRYST GR, 216(1-4), 2000, pp. 532-534
Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe
Authors: Godlewski, M Narkowicz, R Wojtowicz, T Bergman, JP Monemar, B
Citation: M. Godlewski et al., Quasi-zero-dimensional excitons in quantum well structures of CdTe/CdMnTe, J CRYST GR, 214, 2000, pp. 420-423
Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron
Authors: Surkova, TP Kaczor, P Zakrzewski, AJ Swiatek, K Ivanov, VY Godlewski, M Polimeni, A Eaves, L Giriat, W
Citation: Tp. Surkova et al., Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron, J CRYST GR, 214, 2000, pp. 576-580
Mechanism of radiative recombination in acceptor-doped bulk GaN crystals
Authors: Godlewski, M Suski, T Grzegory, I Porowski, S Bergman, JP Chen, WM Monemar, B
Citation: M. Godlewski et al., Mechanism of radiative recombination in acceptor-doped bulk GaN crystals, PHYSICA B, 274, 1999, pp. 39-42
Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloys
Authors: Surkova, TP Godlewski, M Swiatek, K Kaczor, P Polimeni, A Eaves, L Giriat, W
Citation: Tp. Surkova et al., Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloys, PHYSICA B, 274, 1999, pp. 848-851
Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy
Authors: Goldys, EM Godlewski, M Langer, R Barski, A Bergman, P Monemar, B
Citation: Em. Goldys et al., Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy, PHYS REV B, 60(8), 1999, pp. 5464-5469
Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system
Authors: Szczerbakow, A Dynowska, E Swiatek, K Godlewski, M
Citation: A. Szczerbakow et al., Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system, J CRYST GR, 207(1-2), 1999, pp. 148-149
Giant electric fields in unstrained GaN single quantum wells
Authors: Langer, R Simon, J Ortiz, V Pelekanos, NT Barski, A Andre, R Godlewski, M
Citation: R. Langer et al., Giant electric fields in unstrained GaN single quantum wells, APPL PHYS L, 74(25), 1999, pp. 3827-3829
Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells
Authors: Wongmanerod, S Holtz, PO Sernelius, B Reginski, K Bugajski, M Godlewski, M Mauritz, O Zhao, QX Bergman, JP Monemar, B
Citation: S. Wongmanerod et al., Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells, PHYS ST S-B, 210(2), 1998, pp. 615-620
Quantum yield of the Auger-type nonradiative transitions in low-dimensional systems
Authors: Zakrzewski, AJ Godlewski, M
Citation: Aj. Zakrzewski et M. Godlewski, Quantum yield of the Auger-type nonradiative transitions in low-dimensional systems, PHYS ST S-B, 210(2), 1998, pp. 707-710
Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN
Authors: Godlewski, M Goldys, EM Phillips, MR Langer, R Barski, A
Citation: M. Godlewski et al., Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN, APPL PHYS L, 73(25), 1998, pp. 3686-3688
Risultati: 1-23 |