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Results: 1-25/34
Authors:
Pritzkow, W
Vogl, J
Berger, A
Ecker, K
Grotzschel, R
Klingbeil, P
Persson, L
Riebe, G
Watjen, U
Citation: W. Pritzkow et al., Contribution of ICP-IDMS to the certification of antimony implanted in a silicon wafer - comparison with RBS and INAA results, FRESEN J AN, 371(6), 2001, pp. 867-873
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Synchrotron studies of implanted InxGa1-xAs, J ALLOY COM, 328(1-2), 2001, pp. 193-198
Authors:
Kokkoris, M
Kossionides, S
Vlastou, R
Aslanoglou, XA
Grotzschel, R
Nsouli, B
Kuznetsov, A
Petrovic, S
Paradellis, T
Citation: M. Kokkoris et al., Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry, NUCL INST B, 184(3), 2001, pp. 319-326
Authors:
Grotzschel, R
Klein, C
Kruse, O
Citation: R. Grotzschel et al., The Rossendorf broad-range magnetic spectrometer for high resolution RES and NRA, NUCL INST B, 183(1-2), 2001, pp. 3-9
Authors:
Jagielski, J
Kopcewicz, M
Matz, W
Grotzschel, R
Thome, L
Citation: J. Jagielski et al., Phase transformations in nitrogen-implanted iron layers, NUCL INST B, 175, 2001, pp. 448-452
Authors:
Werner, Z
Piekoszewski, J
Barcz, A
Grotzschel, R
Prokert, F
Stanislawski, J
Szymczyk, W
Citation: Z. Werner et al., Alloying of Pd into Ti by pulsed plasma beams, NUCL INST B, 175, 2001, pp. 767-771
Authors:
Ecker, KH
Berger, A
Grotzschel, R
Persson, L
Watjen, U
Citation: Kh. Ecker et al., Antimony implanted in silicon - A thin layer reference material for surface analysis, NUCL INST B, 175, 2001, pp. 797-801
Authors:
Kokkoris, M
Vlastou, R
Aslanoglou, XA
Kossionides, E
Grotzschel, R
Paradellis, T
Citation: M. Kokkoris et al., Determination of the stopping power of channeled protons in SiO2 in the backscattering geometry, NUCL INST B, 173(4), 2001, pp. 411-416
Authors:
Seifarth, H
Schmidt, JU
Grotzschel, R
Klimenkov, M
Citation: H. Seifarth et al., Phenomenological model of reactive r.f.-magnetron sputtering of Si in Ar/O-2 atmosphere for the prediction of SiOx thin film stoichiometry from process parameters, THIN SOL FI, 389(1-2), 2001, pp. 108-115
Authors:
Seppala, A
Rauhala, E
Grotzschel, R
Citation: A. Seppala et al., Lattice location of implanted tellurium in GaN heteroepitaxial films, J PHYS D, 34(3), 2001, pp. 269-272
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Characterization of implanted semiconductors by means of white-beam and plane-wave synchrotron topography, J SYNCHROTR, 7, 2000, pp. 318-325
Authors:
Piekoszewski, J
Grotzschel, R
Wieser, E
Stanislawski, J
Werner, Z
Szymczyk, W
Langner, J
Citation: J. Piekoszewski et al., Kinetics of the pulsed erosion deposition process induced by high intensity plasma beams, SURF COAT, 128, 2000, pp. 394-399
Authors:
Jiang, W
Weber, WJ
Thevuthasan, S
Grotzschel, R
Citation: W. Jiang et al., Irradiation effects and thermal annealing behavior in H-2(+)-implanted 6H-SiC, NUCL INST B, 166, 2000, pp. 374-378
Authors:
Barradas, NP
Parascandola, S
Sealy, BJ
Grotzschel, R
Kreissig, U
Citation: Np. Barradas et al., Simultaneous and consistent analysis of NRA, RES and ERDA data with the IBA DataFurnace, NUCL INST B, 161, 2000, pp. 308-313
Authors:
Jiang, W
Thevuthasan, S
Weber, WJ
Grotzschel, R
Citation: W. Jiang et al., Deuterium channeling analysis for He+-implanted 6H-SiC, NUCL INST B, 161, 2000, pp. 501-504
Authors:
Barradas, NP
Khan, RUA
Anguita, JV
Silva, SRP
Kreissig, U
Grotzschel, R
Moller, W
Citation: Np. Barradas et al., Growth and characterisation of amorphous carbon films doped with nitrogen, NUCL INST B, 161, 2000, pp. 969-974
Authors:
Moller, W
Behrisch, R
Bethge, K
Grotzschel, R
Citation: W. Moller et al., 14th International Conference on Ion Beam Analysis (TBA-14) 6th European Conference on Accelerators in Applied Research and Technology (ECAART-6), NUCL INST B, 161, 2000, pp. VII-VIII
Authors:
Warchol, S
Rzewuski, H
Krynicki, J
Grotzschel, R
Citation: S. Warchol et al., Post-implantation defects instability under 1 MeV electron irradiation in GaAs, NUKLEONIKA, 45(4), 2000, pp. 225-228
Authors:
Barson, SD
Skeldon, P
Thompson, GE
Piekoszewski, J
Chmielewski, AG
Werner, Z
Grotzschel, R
Wieser, E
Citation: Sd. Barson et al., Corrosion protection of titanium by pulsed plasma deposition of palladium, CORROS SCI, 42(7), 2000, pp. 1213-1234
Authors:
Wieteska, K
Wierzchowski, W
Graeff, W
Turos, A
Grotzschel, R
Citation: K. Wieteska et al., Lattice deformation in AlxGa1-xAs epitaxial layers caused by implantation with high doses of 1 MeV Si ions, ACT PHY P A, 96(2), 1999, pp. 289-293
Authors:
Markwitz, A
Grotzschel, R
Heinig, KH
Rebohle, L
Skorupa, W
Citation: A. Markwitz et al., Microstructural investigation of Sn nanoclusters in double-energy implanted and annealed SiO2 layers with cross-sectional TEM, NUCL INST B, 152(2-3), 1999, pp. 319-324
Authors:
Barradas, NP
Jeynes, C
Webb, RP
Kreissig, U
Grotzschel, R
Citation: Np. Barradas et al., Unambiguous automatic evaluation of multiple Ion Beam Analysis data with Simulated Annealing, NUCL INST B, 149(1-2), 1999, pp. 233-237
Authors:
Piekoszewski, J
Wieser, E
Grotzschel, R
Reuther, H
Werner, Z
Langner, J
Citation: J. Piekoszewski et al., Pulsed plasma beam mixing of Ti and Mo into Al2O3 substrates, NUCL INST B, 148(1-4), 1999, pp. 32-36
Authors:
Heinig, KH
Schmidt, B
Markwitz, A
Grotzschel, R
Strobel, M
Oswald, S
Citation: Kh. Heinig et al., Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers, NUCL INST B, 148(1-4), 1999, pp. 969-974
Authors:
Maser, K
Mohr, U
Leihkauf, R
Ecker, K
Beck, U
Grambole, D
Grotzschel, R
Herrmann, F
Krauser, J
Weidinger, A
Citation: K. Maser et al., Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation, MICROEL ENG, 48(1-4), 1999, pp. 139-142