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Results: 1-25/53
Authors:
WIRTH R
GENG C
SCHOLZ F
HANGLEITER A
Citation: R. Wirth et al., DETERMINATION OF ORDERING INDUCED BIREFRINGENCE IN (AL)GAINP, Journal of electronic materials, 27(3), 1998, pp. 122-126
Authors:
IM JS
KOLLMER H
OFF J
SOHMER A
SCHOLZ F
HANGLEITER A
Citation: Js. Im et al., REDUCTION OF OSCILLATOR STRENGTH DUE TO PIEZOELECTRIC FIELDS IN GAN ALXGA1-XN QUANTUM-WELLS/, Physical review. B, Condensed matter, 57(16), 1998, pp. 9435-9438
Authors:
IM JS
HEPPEL S
KOLLMER H
SOHMER A
OFF J
SCHOLZ F
HANGLEITER A
Citation: Js. Im et al., EVIDENCE FOR QUANTUM-DOT-LIKE STATES IN GAINN GAN QUANTUM-WELLS/, Journal of crystal growth, 190, 1998, pp. 597-600
Authors:
WIRTH R
SEITZ H
GEIGER M
PORSCHE J
SCHOLZ F
HANGLEITER A
Citation: R. Wirth et al., VALENCE-BAND SPLITTING AND BAND-GAP REDUCTION IN ORDERED GAINAS INP/, Journal of applied physics, 83(11), 1998, pp. 6196-6198
Authors:
ZUNDEL MK
JINPHILLIPP NY
PHILLIPP F
EBERL K
RIEDL T
FEHRENBACHER E
HANGLEITER A
Citation: Mk. Zundel et al., RED-LIGHT-EMITTING INJECTION-LASER BASED ON INP GAINP SELF-ASSEMBLED QUANTUM DOTS/, Applied physics letters, 73(13), 1998, pp. 1784-1786
Authors:
KNORR C
RIEDL T
GEIGER M
SCHOLZ F
HANGLEITER A
Citation: C. Knorr et al., HOLE TRANSPORT OVER HETEROBARRIERS IN INP BASED MULTIPLE-QUANTUM-WELLSTRUCTURES, Applied physics letters, 72(11), 1998, pp. 1323-1325
Authors:
SCHOLZ F
SOHMER A
OFF J
SYGANOW V
DORNEN A
IM JS
HANGLEITER A
LAKNER H
Citation: F. Scholz et al., IN INCORPORATION EFFICIENCY AND COMPOSITION FLUCTUATIONS IN MOVPE GROWN GAINN GAN HETERO STRUCTURES AND QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 238-244
Authors:
GFRORER O
OFF J
SOHMER A
SCHOLZ F
HANGLEITER A
Citation: O. Gfrorer et al., INVESTIGATIONS OF SELECTIVELY GROWN GAN INGAN EPITAXIAL LAYERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 268-271
Authors:
HANGLEITER A
FRANKOWSKY G
HARLE V
SCHOLZ F
Citation: A. Hangleiter et al., OPTICAL GAIN IN THE NITRIDES - ARE THERE DIFFERENCES TO OTHER III-V SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 201-206
Authors:
GFRORER O
SCHLUSENER T
HARLE V
SCHOLZ F
HANGLEITER A
Citation: O. Gfrorer et al., RELAXATION OF THERMAL STRAIN IN GAN EPITAXIAL LAYERS GROWN ON SAPPHIRE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 250-252
Authors:
HANGLEITER A
GEIGER M
KNORR C
KONIG P
OTTENWALDER D
RIEDL T
SCHOLZ F
ZIMMERMANN M
HILLMER H
STEINHAGEN F
BURKHARD H
Citation: A. Hangleiter et al., CARRIER TRANSPORT IN INP-BASED LASERS, MODULATORS, AND OPTICAL SWITCHING DEVICES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 570-573
Authors:
KUHN J
VOLLMER B
MORITZ A
HEPPEL S
GENG C
SCHOLZ F
HANGLEITER A
SCHWEIZER H
Citation: J. Kuhn et al., DYNAMIC PROPERTIES OF GAINP MULTIELECTRODE RIDGE-WAVE-GUIDE LASERS, Semiconductor science and technology, 12(4), 1997, pp. 439-442
Authors:
WIRTH R
MORITZ A
GENG C
SCHOLZ F
HANGLEITER A
Citation: R. Wirth et al., BIREFRINGENCE IN ORDERED (AL)GAINP, Physical review. B, Condensed matter, 55(3), 1997, pp. 1730-1740
Authors:
SCHOLZ F
HARLE V
BOLAY H
STEUBER F
KAUFMANN B
REYHER G
DORNEN A
GFRORER O
IM SJ
HANGLEITER A
Citation: F. Scholz et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAN GAINN HETEROSTRUCTURES/, Solid-state electronics, 41(2), 1997, pp. 141-144
Authors:
EBERL K
KURTENBACH A
ZUNDEL M
JINPHILLIPP JY
PHILLIPP F
MORITZ A
WIRTH R
HANGLEITER A
Citation: K. Eberl et al., SELF-ASSEMBLING INP QUANTUM DOTS FOR RED LASERS, Journal of crystal growth, 175, 1997, pp. 702-706
Authors:
SCHOLZ F
HARLE V
STEUBER F
BOLAY H
DORNEN A
KAUFMANN B
SYGANOW V
HANGLEITER A
Citation: F. Scholz et al., LOW-PRESSURE MOVPE OF GAN AND GAINN GAN HETEROSTRUCTURES/, Journal of crystal growth, 170(1-4), 1997, pp. 321-324
Authors:
GENG C
MORITZ A
HEPPEL S
MUHE A
KUHN J
ERNST P
SCHWEIZER H
PHILLIPP F
HANGLEITER A
SCHOLZ F
Citation: C. Geng et al., INFLUENCE OF ORDER-DOMAIN SIZE ON THE OPTICAL GAIN OF ALGAINP LASER STRUCTURES, Journal of crystal growth, 170(1-4), 1997, pp. 418-423
Authors:
OTTENWALDER D
FRANKOWSKY G
GFRORER O
HANGLEITER A
SCHOLZ F
Citation: D. Ottenwalder et al., CONTROL OF MONOLAYER TERRACE FORMATION IN SELECTIVE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 695-699
Authors:
MORITZ A
WIRTH R
HEPPEL S
GENG C
KUHN J
SCHWEIZER H
SCHOLZ F
HANGLEITER A
Citation: A. Moritz et al., INTRINSIC MODULATION BANDWIDTH OF STRAINED GAINP ALGAINP QUANTUM-WELLLASERS/, Applied physics letters, 71(5), 1997, pp. 650-652
Authors:
WIRTH R
SEITZ H
GEIGER M
SCHOLZ F
HANGLEITER A
MUHE A
PHILLIPP F
Citation: R. Wirth et al., SINGLE VARIANT ORDERING IN GAINAS INP, Applied physics letters, 71(15), 1997, pp. 2127-2129
Authors:
IM JS
MORITZ A
STEUBER F
HARLE V
SCHOLZ F
HANGLEITER A
Citation: Js. Im et al., RADIATIVE CARRIER LIFETIME, MOMENTUM MATRIX ELEMENT, AND HOLE EFFECTIVE-MASS IN GAN, Applied physics letters, 70(5), 1997, pp. 631-633
Authors:
SCHWANDER T
ANHEGGER M
BURGER N
FEIFEL T
HIRCHE K
KORN M
PANZLAFF K
SCHROTER S
WARTH M
KONIG P
HANGLEITER A
Citation: T. Schwander et al., ENHANCED ELECTROABSORPTION IN TENSILE-STRAINED GAYIN1-YAS ALXIN1-XAS/INP QUANTUM-WELL STRUCTURES, DUE TO FIELD-INDUCED MERGING OF LIGHT-HOLE AND HEAVY-HOLE TRANSITIONS/, Applied physics letters, 70(21), 1997, pp. 2855-2857
Authors:
KNORR C
WILHELM U
HARLE V
OTTENWALDER D
SCHOLZ F
HANGLEITER A
Citation: C. Knorr et al., A MECHANISM FOR LOW-POWER ALL-OPTICAL SWITCHING IN MULTIPLE-QUANTUM-WELL STRUCTURES, Applied physics letters, 69(27), 1996, pp. 4212-4214
Authors:
SOGAWA F
HANGLEITER A
WATABE H
NAGAMUNE Y
NISHIOKA M
ARAKAWA Y
Citation: F. Sogawa et al., INFLUENCE OF CARRIER TRANSPORT CAPTURE AND GAIN FLATTENING IN PICOSECOND PULSE GENERATION OF INGAAS MICROCAVITY LASERS/, Applied physics letters, 69(21), 1996, pp. 3137-3139
Authors:
MORITZ A
WIRTH R
HANGLEITER A
KURTENBACH A
EBERL K
Citation: A. Moritz et al., OPTICAL GAIN AND LASING IN SELF-ASSEMBLED INP GAINP QUANTUM DOTS/, Applied physics letters, 69(2), 1996, pp. 212-214