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Results: 1-25/33
Authors:
TSUCHIYA H
SUNABA K
MINAMI M
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., INFLUENCE OF AS AUTODOPING FROM GAAS SUBSTRATES ON THICK CUBIC GAN GROWTH BY HALIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 37(5B), 1998, pp. 568-570
Authors:
SUEMASU T
TAKAKURA K
TANAKA M
FUJII T
HASEGAWA F
Citation: T. Suemasu et al., MAGNETOTRANSPORT PROPERTIES OF A SINGLE-CRYSTALLINE BETA-FESI2 LAYER GROWN ON SI(001) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY, JPN J A P 2, 37(3B), 1998, pp. 333-335
Authors:
YAGUCHI T
YONEMURA S
TSUCHIYA H
SHIMOYAMA N
SUEMASU T
HASEGAWA F
Citation: T. Yaguchi et al., DEPENDENCE OF GAN MOMBE GROWTH ON NITROGEN-SOURCE - ECR PLASMA GUN STRUCTURE AND MONOMETHYL-HYDRAZINE, Journal of crystal growth, 190, 1998, pp. 380-384
Authors:
TSUCHIYA H
SUNABA K
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., GROWTH CONDITION DEPENDENCE OF GAN CRYSTAL-STRUCTURE ON (001)GAAS BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 395-400
Authors:
YONEMURA S
YAGUCHI T
TSUCHIYA H
SHIMOYAMA N
SUEMASU T
HASEGAWA F
Citation: S. Yonemura et al., COMPARISON BETWEEN MONOMETHYL HYDRAZINE AND ECR PLASMA ACTIVATED NITROGEN AS A NITROGEN-SOURCE FOR CBE GROWTH OF GAN, Journal of crystal growth, 188(1-4), 1998, pp. 81-85
Authors:
TANAKA M
KUMAGAI Y
SUEMASU T
HASEGAWA F
Citation: M. Tanaka et al., FORMATION OF BETA-FESI2 LAYERS ON SI(001) SUBSTRATES, JPN J A P 1, 36(6A), 1997, pp. 3620-3624
Authors:
SUEMASU T
YAMAMOTO M
TAKAKURA K
HASHIMOTO S
KUMAGAI Y
HASEGAWA F
Citation: T. Suemasu et al., SI MOLECULAR-BEAM EPITAXIAL-GROWTH OVER AN ATOMIC-LAYER BORON ABSORBED SI(001) SUBSTRATE AND ITS ELECTRICAL-PROPERTIES, JPN J A P 1, 36(12A), 1997, pp. 7146-7151
Authors:
SUEMASU T
TANAKA M
FUJII T
HASHIMOTO S
KUMAGAI Y
HASEGAWA F
Citation: T. Suemasu et al., AGGREGATION OF MONOCRYSTALLINE BETA-FESI2 BY ANNEALING AND BY SI OVERLAYER GROWTH, JPN J A P 2, 36(9AB), 1997, pp. 1225-1228
Authors:
TSUCHIYA H
SUNABA K
YONEMURA S
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., CUBIC DOMINANT GAN GROWTH ON (001)GAAS SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 36(1AB), 1997, pp. 1-3
Authors:
ESUMI H
CHIN K
KURASHIMA Y
HASEGAWA F
OGURA T
YONEDA M
OZAWA T
Citation: H. Esumi et al., REVERSIBLE CELL-CYCLE ARREST WITH CONCOMITANT P21 WAF1 OVEREXPRESSIONAND MITOCHONDRIAL DESTRUCTION BY NITRIC-OXIDE/, Biochemistry and molecular biology international, 42(4), 1997, pp. 779-787
Authors:
TANAKA M
KUMAGAI Y
SUEMASU T
HASEGAWA F
Citation: M. Tanaka et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 LAYERS ON SI(001), Applied surface science, 117, 1997, pp. 303-307
Authors:
KANEKO H
ARIMOTO C
YAMAGAMI A
HASEGAWA F
OTUKA M
NEMOTO Y
TAKAHASHI H
HAYASHI T
IWASHIGE H
MARUO T
Citation: H. Kaneko et al., A STUDY OF THE RELATIONSHIP BETWEEN CLINICAL-EVALUATION AND THE SURFACE ELECTROMYOGRAPHY OF BLEPHALOSPASM, Investigative ophthalmology & visual science, 38(4), 1997, pp. 573-573
DEPENDENCE OF THE HVPE GAN EPILAYER ON GAN BUFFER LAYER FOR GAN DIRECT GROWTH ON (001)GAAS SUBSTRATE
Authors:
TSUCHIYA H
TAKEUCHI A
MATSUO A
HASEGAWA F
Citation: H. Tsuchiya et al., DEPENDENCE OF THE HVPE GAN EPILAYER ON GAN BUFFER LAYER FOR GAN DIRECT GROWTH ON (001)GAAS SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 333-338
Authors:
TSUCHIYA H
AKAMATSU M
ISHIDA M
HASEGAWA F
Citation: H. Tsuchiya et al., LAYER-BY-LAYER GROWTH OF GAN ON GAAS SUBSTRATES BY ALTERNATE SUPPLY OF GACL3 AND NH3, JPN J A P 2, 35(6B), 1996, pp. 748-750
Authors:
MORI R
KUMAGAI Y
TANAKA M
YAMAMOTO M
HASEGAWA F
Citation: R. Mori et al., STABILITY OF SI(111)ROOT-3X-ROOT-3R30-DEGREES-B SURFACE IN AIR, JPN J A P 2, 35(4B), 1996, pp. 465-467
Authors:
KUMAGAI Y
ISHIMOTO K
MORI R
TEE KM
ISHIBASHI T
KAWABE M
HASEGAWA F
Citation: Y. Kumagai et al., 4-MONOLAYER-HEIGHT LAYER-BY-LAYER GROWTH AND INCREASE OF THE CRITICALTHICKNESS OF GE HETEROEPITAXY ON BORON-PREADSORBED SI(111) SURFACE, JPN J A P 2, 35(4B), 1996, pp. 476-478
Authors:
ISURUGI K
HASEGAWA F
SHIBAHARA N
MORI H
SHIMA H
HARADA N
HASEGAWA T
HONMA S
IMASAKI K
NAWATA A
Citation: K. Isurugi et al., INCOMPLETE TESTICULAR FEMINIZATION SYNDROME - STUDIES ON ANDROGEN RECEPTOR(AR) FUNCTION, AR GENE ANALYSIS, AND AROMATASE ACTIVITIES AT PUBERTY AND LONG-TERM OBSERVATIONS OF CLINICAL AND HORMONAL FEATURES FROM INFANCY TO PUBERTY, Endocrine journal, 43(5), 1996, pp. 557-564
Authors:
KUMAGAI Y
MORI R
ISHIMOTO K
PARK KH
HASEGAWA F
Citation: Y. Kumagai et al., GROWTH TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION AND ELECTRICAL-PROPERTIES OF BORON DELTA-DOPED STRUCTURES GROWN BY SI MOLECULAR-BEAM EPITAXY, JPN J A P 1, 34(9A), 1995, pp. 4593-4598
Authors:
KUMAGAI Y
ISHIMOTO K
HASHIMOTO S
PARK KH
HASEGAWA F
Citation: Y. Kumagai et al., COMPARISON OF PLANAR TO COLUMNAR TRANSFORMATION OF PTSI LAYERS ON SI(001) AND SI(111) SUBSTRATES IN THE SI CAPPING LAYER GROWTH-PROCESS, JPN J A P 1, 34(9A), 1995, pp. 4621-4626
Authors:
ASHIDA T
TSUBAKI K
HASEGAWA F
URASE F
ISHIKAWA H
HAZE S
HORIUCHI A
Citation: T. Ashida et al., CHANGE OF FECAL FLORA IN PATIENTS WITH ALLOGENEIC BONE-MARROW TRANSPLANTATION - COMPARISON BETWEEN AMPHOTERICINE-B AND FLUCONAZOLE, Experimental hematology, 23(8), 1995, pp. 860-860
Authors:
TSUCHIYA H
TAKEUCHI A
KURIHARA M
HASEGAWA F
Citation: H. Tsuchiya et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF CUBIC GAN ON (100)GAAS SUBSTRATES USING TRIETHYLGALLIUM AND MONOMETHYLHYDRAZINE, Journal of crystal growth, 152(1-2), 1995, pp. 21-27
Authors:
KUMAGAI Y
ISHIMOTO K
MORI R
HASEGAWA F
Citation: Y. Kumagai et al., TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION IN SI MOLECULAR-BEAM EPITAXIAL-GROWTH ON THE SI(111) ROOT-3X-ROOT-3-B SURFACE, Journal of crystal growth, 150(1-4), 1995, pp. 989-993
Authors:
TSUCHIYA H
OKAHISA T
HASEGAWA F
OKUMURA H
YOSHIDA S
Citation: H. Tsuchiya et al., HOMOEPITAXIAL GROWTH OF CUBIC GAN BY HYDRIDE VAPOR-PHASE EPITAXY ON CUBIC GAN GAAS SUBSTRATES PREPARED WITH GAS-SOURCE MOLECULAR-BEAM EPITAXY/, JPN J A P 1, 33(4A), 1994, pp. 1747-1752
Authors:
TSUCHIYA H
HASEGAWA F
OKUMURA H
YOSHIDA S
Citation: H. Tsuchiya et al., COMPARISON OF HYDRIDE VAPOR-PHASE EPITAXY OF GAN LAYERS ON CUBIC GAN (100)GAAS AND HEXAGONAL GAN/(111)GAAS SUBSTRATES/, JPN J A P 1, 33(12A), 1994, pp. 6448-6453
Authors:
KUMAGAI Y
MORI R
ISHIMOTO K
HASEGAWA F
Citation: Y. Kumagai et al., INFLUENCE OF BORON ADSORPTION OVER SI(111) SURFACE ON SI MOLECULAR-BEAM EPITAXIAL-GROWTH STUDIES BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, JPN J A P 2, 33(6B), 1994, pp. 120000817-120000819