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Results:
1-16
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Results: 16
Authors:
FUKAREK W
YANKOV RA
ANWAND W
HEERA V
Citation: W. Fukarek et al., DAMAGE IN SILICON-CARBIDE INDUCED BY RUTHERFORD BACKSCATTERING ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 561-570
Authors:
HENKEL T
HEERA V
KOGLER R
SKORUPA W
Citation: T. Henkel et al., IN-SITU LASER REFLECTOMETRY STUDY OF THE AMORPHIZATION OF SILICON-CARBIDE BY MEV ION-IMPLANTATION, Journal of applied physics, 84(6), 1998, pp. 3090-3097
Authors:
HEERA V
Citation: V. Heera, COMMENT ON AMORPHIZATION AND DEFECT RECOMBINATION IN ION-IMPLANTED SILICON-CARBIDE, Journal of applied physics, 83(7), 1998, pp. 3935-3936
Authors:
WEISHART H
HEERA V
MATZ W
SKORUPA W
Citation: H. Weishart et al., ION-BEAM-ASSISTED DEPOSITION OF A TUNGSTEN COMPOUND LAYER ON 6H-SILICON CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1432-1435
Authors:
HENKEL T
HEERA V
KOGLER R
SKORUPA W
SEIBT M
Citation: T. Henkel et al., KINETICS OF ION-BEAM-INDUCED INTERFACIAL AMORPHIZATION IN SILICON, Journal of applied physics, 82(11), 1997, pp. 5360-5373
Authors:
HEERA V
PROKERT F
SCHELL N
SEIFARTH H
FUKAREK W
VOELSKOW M
SKORUPA W
Citation: V. Heera et al., DENSITY AND STRUCTURAL-CHANGES IN SIC AFTER AMORPHIZATION AND ANNEALING, Applied physics letters, 70(26), 1997, pp. 3531-3533
Authors:
SKORUPA W
HEERA V
PACAUD Y
WEISHART H
Citation: W. Skorupa et al., ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 114-120
Authors:
PACAUD Y
STOEMENOS J
BRAUER G
YANKOV RA
HEERA V
VOELSKOW M
KOGLER R
SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
Authors:
PEREZRODRIGUEZ A
KOGLER R
CALVOBARRIO L
SERRE C
ROMANORODRIGUEZ A
HEERA V
SKORUPA W
MORANTE JR
Citation: A. Perezrodriguez et al., ION-BEAM-ASSISTED RECRYSTALLIZATION OF SIC SI STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 334-337
Authors:
HEERA V
Citation: V. Heera, EVIDENCE OF ENHANCED EPITAXIAL CRYSTALLIZATION AT LOW-TEMPERATURE BY INELASTIC ELECTRONIC SCATTERING OF MEGA-ELECTRON-VOLT HEAVY-ION-BEAM IRRADIATION - COMMENT, Journal of applied physics, 80(7), 1996, pp. 4235-4236
Authors:
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
PACAUD Y
KOGLER R
HEERA V
SKORUPA W
Citation: C. Serre et al., ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS - STRUCTURAL-ANALYSIS AND RECRYSTALLIZATION, Journal of applied physics, 79(9), 1996, pp. 6907-6913
Authors:
HEERA V
HENKEL T
KOGLER R
SKORUPA W
Citation: V. Heera et al., EVIDENCE FOR DIFFUSION-LIMITED KINETICS OF ION-BEAM-INDUCED EPITAXIALCRYSTALLIZATION IN SILICON, Physical review. B, Condensed matter, 52(22), 1995, pp. 15776-15784
Authors:
HEERA V
STOEMENOS J
KOGLER R
SKORUPA W
Citation: V. Heera et al., AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION, Journal of applied physics, 77(7), 1995, pp. 2999-3009
Authors:
HEERA V
KOGLER R
SKORUPA W
STOEMENOS J
Citation: V. Heera et al., COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY IONIRRADIATION, Applied physics letters, 67(14), 1995, pp. 1999-2001
Authors:
HEERA V
KOGLER R
SKORUPA W
GROTZSCHEL R
Citation: V. Heera et al., DOSE-RATE DEPENDENCE OF THE ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 538-542
Authors:
KOGLER R
HEERA V
SKORUPA W
GLASER E
BACHMANN T
RUCK D
Citation: R. Kogler et al., REDUCED REVERSE TEMPERATURE OF ION-BEAM-INDUCED AMORPHIZATION CRYSTALLIZATION FOR INTERMITTENT BEAM IRRADIATION OF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 556-558
Risultati:
1-16
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