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Results: 1-25 | 26-27
Results: 1-25/27
THERMALLY-INDUCED STRAIN IN MBE GROWN GAN LAYERS
Authors: HEINKE H KIRCHNER V EINFELDT S BIRKLE U HOMMEL D
Citation: H. Heinke et al., THERMALLY-INDUCED STRAIN IN MBE GROWN GAN LAYERS, Journal of crystal growth, 190, 1998, pp. 375-379
TEMPERATURE-DEPENDENT MEASUREMENTS ON ZNSE HETEROSTRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: GROSSMANN V BEHRINGER M HEINKE H HOMMEL D
Citation: V. Grossmann et al., TEMPERATURE-DEPENDENT MEASUREMENTS ON ZNSE HETEROSTRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of crystal growth, 185, 1998, pp. 100-104
FORMATION OF SELF-ASSEMBLING II-VI SEMICONDUCTOR NANOSTRUCTURES DURING MIGRATION-ENHANCED EPITAXY
Authors: LEONARDI K SELKE H HEINKE H OHKAWA K HOMMEL D GINDELE F WOGGON U
Citation: K. Leonardi et al., FORMATION OF SELF-ASSEMBLING II-VI SEMICONDUCTOR NANOSTRUCTURES DURING MIGRATION-ENHANCED EPITAXY, Journal of crystal growth, 185, 1998, pp. 259-263
STABILITY ISSUES OF QUATERNARY CDZNSSE AND TERNARY CDZNSE QUANTUM-WELLS IN BLUE-GREEN LASER-DIODES
Authors: BEHRINGER M OHKAWA K GROSSMANN V HEINKE H LEONARDI K FEHRER M HOMMEL D KUTTLER M STRASSBURG M BIMBERG D
Citation: M. Behringer et al., STABILITY ISSUES OF QUATERNARY CDZNSSE AND TERNARY CDZNSE QUANTUM-WELLS IN BLUE-GREEN LASER-DIODES, Journal of crystal growth, 185, 1998, pp. 580-584
STRUCTURAL-PROPERTIES OF HOMOEPITAXIAL AND HETEROEPITAXIAL ZNSE-BASEDLASER STRUCTURES
Authors: HEINKE H BEHRINGER M WENISCH H GROSSMANN V HOMMEL D
Citation: H. Heinke et al., STRUCTURAL-PROPERTIES OF HOMOEPITAXIAL AND HETEROEPITAXIAL ZNSE-BASEDLASER STRUCTURES, Journal of crystal growth, 185, 1998, pp. 587-590
INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXY OF INGAN
Authors: BOTTCHER T EINFELDT S KIRCHNER V FIGGE S HEINKE H HOMMEL D SELKE H RYDER PL
Citation: T. Bottcher et al., INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXY OF INGAN, Applied physics letters, 73(22), 1998, pp. 3232-3234
PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN
Authors: EINFELDT S BIRKLE U THOMAS C FEHRER M HEINKE H HOMMEL D
Citation: S. Einfeldt et al., PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY GROWTH OF GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 12-15
CDSE ZNSE QUANTUM-DOT STRUCTURES - STRUCTURAL AND OPTICAL INVESTIGATIONS/
Authors: HOMMEL D LEONARDI K HEINKE H SELKE H OHKAWA K GINDELE F WOGGON U
Citation: D. Hommel et al., CDSE ZNSE QUANTUM-DOT STRUCTURES - STRUCTURAL AND OPTICAL INVESTIGATIONS/, Physica status solidi. b, Basic research, 202(2), 1997, pp. 835-843
CDSE ZNSE QUANTUM STRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY - STRUCTURAL AND OPTICAL INVESTIGATIONS/
Authors: LEONARDI K HEINKE H OHKAWA K HOMMEL D SELKE H GINDELE F WOGGON U
Citation: K. Leonardi et al., CDSE ZNSE QUANTUM STRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY - STRUCTURAL AND OPTICAL INVESTIGATIONS/, Applied physics letters, 71(11), 1997, pp. 1510-1512
THE BAND-GAP OF HG1-XMGXTE GROWN BY MOLECULAR-BEAM EPITAXY
Authors: OEHLING S LUNZ U HEINKE H PLAHL G BECKER CR LANDWEHR G
Citation: S. Oehling et al., THE BAND-GAP OF HG1-XMGXTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 1157-1160
P-TYPE DOPING OF CDTE WITH A NITROGEN PLASMA SOURCE
Authors: OEHLING S LUGAUER HJ SCHMITT M HEINKE H ZEHNDER U WAAG A BECKER CR LANDWEHR G
Citation: S. Oehling et al., P-TYPE DOPING OF CDTE WITH A NITROGEN PLASMA SOURCE, Journal of applied physics, 79(5), 1996, pp. 2343-2346
DOPING OF THE WIDE-GAP SEMICONDUCTOR CD1-XMGXTE DURING MOLECULAR-BEAMEPITAXY
Authors: FISCHER F LITZ T WAAG A HEINKE H SCHOLL S GERSCHUTZ J LANDWEHR G
Citation: F. Fischer et al., DOPING OF THE WIDE-GAP SEMICONDUCTOR CD1-XMGXTE DURING MOLECULAR-BEAMEPITAXY, Acta Physica Polonica. A, 87(2), 1995, pp. 487-491
ELECTRICAL CONTACTS TO P-ZNSE BASED ON HGSE AND ZNTE
Authors: EINFELDT S BEHRINGER M NURNBERGER J HEINKE H BEHR T BECKER CR HOMMEL D LANDWEHR G
Citation: S. Einfeldt et al., ELECTRICAL CONTACTS TO P-ZNSE BASED ON HGSE AND ZNTE, Physica status solidi. b, Basic research, 187(2), 1995, pp. 439-450
APPLICATION OF THE MODEL OF THE RELAXATION LINE IN RECIPROCAL SPACE TO II-VI HETEROSTRUCTURES
Authors: HEINKE H EINFELDT S KUHNHEINRICH B PLAHL G MOLLER MO LANDWEHR G
Citation: H. Heinke et al., APPLICATION OF THE MODEL OF THE RELAXATION LINE IN RECIPROCAL SPACE TO II-VI HETEROSTRUCTURES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 104-108
MOLECULAR-BEAM EPITAXIAL-GROWTH AND SEGREGATION OF HG1-XZNXSE ALLOYS
Authors: EINFELDT S LUNZ U HEINKE H BECKER CR LANDWEHR G
Citation: S. Einfeldt et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND SEGREGATION OF HG1-XZNXSE ALLOYS, Journal of crystal growth, 146(1-4), 1995, pp. 427-432
EXCITON MAGNETIC POLARONS IN THE SEMIMAGNETIC ALLOYS CD1-X-YMNXMGYTE
Authors: MACKH G HILPERT M YAKOVLEV DR OSSAU W HEINKE H LITZ T FISCHER F WAAG A LANDWEHR G HELLMANN R GOBEL EO
Citation: G. Mackh et al., EXCITON MAGNETIC POLARONS IN THE SEMIMAGNETIC ALLOYS CD1-X-YMNXMGYTE, Physical review. B, Condensed matter, 50(19), 1994, pp. 14069-14076
STRUCTURAL CHARACTERIZATION AND INTERFACIAL STUDIES OF ZNSE BASED HETEROSTRUCTURES ON GAAS
Authors: MOLLER MO BEYERSDORFER V HOMMEL D BEHR T HEINKE H LIPPMANN T LANDWEHR G
Citation: Mo. Moller et al., STRUCTURAL CHARACTERIZATION AND INTERFACIAL STUDIES OF ZNSE BASED HETEROSTRUCTURES ON GAAS, Journal of crystal growth, 143(3-4), 1994, pp. 162-171
MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISM OF ZNSE EPILAYERS ON (100) GAAS AS DETERMINED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION
Authors: RUPPERT P HOMMEL D BEHR T HEINKE H WAAG A LANDWEHR G
Citation: P. Ruppert et al., MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISM OF ZNSE EPILAYERS ON (100) GAAS AS DETERMINED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION, Journal of crystal growth, 138(1-4), 1994, pp. 48-54
WIDE-GAP CD1-XMGXTE - MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION
Authors: WAAG A FISCHER F LITZ T KUHNHEINRICH B ZEHNDER U OSSAU W SPAHN W HEINKE H LANDWEHR G
Citation: A. Waag et al., WIDE-GAP CD1-XMGXTE - MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION, Journal of crystal growth, 138(1-4), 1994, pp. 155-160
HALOGEN DOPING OF II-VI SEMICONDUCTORS DURING MOLECULAR-BEAM EPITAXY
Authors: WAAG A LITZ T FISCHER F HEINKE H SCHOLL S HOMMEL D LANDWEHR G BILGER G
Citation: A. Waag et al., HALOGEN DOPING OF II-VI SEMICONDUCTORS DURING MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 138(1-4), 1994, pp. 437-442
THE GROWTH OF HGSE BY MOLECULAR-BEAM EPITAXY FOR OHMIC CONTACTS TO P-ZNSE
Authors: EINFELDT S HEINKE H BEHRINGER M BECKER CR KURTZ E HOMMEL D LANDWEHR G
Citation: S. Einfeldt et al., THE GROWTH OF HGSE BY MOLECULAR-BEAM EPITAXY FOR OHMIC CONTACTS TO P-ZNSE, Journal of crystal growth, 138(1-4), 1994, pp. 471-476
RELAXATION AND MOSAICITY PROFILES IN EPITAXIAL LAYERS STUDIED BY HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: HEINKE H MOLLER MO HOMMEL D LANDWEHR G
Citation: H. Heinke et al., RELAXATION AND MOSAICITY PROFILES IN EPITAXIAL LAYERS STUDIED BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of crystal growth, 135(1-2), 1994, pp. 41-52
UNUSUAL STRAIN IN HOMOEPITAXIAL CDTE(001) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: HEINKE H WAAG A MOLLER MO REGNET MM LANDWEHR G
Citation: H. Heinke et al., UNUSUAL STRAIN IN HOMOEPITAXIAL CDTE(001) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 53-60
STRUCTURAL-PROPERTIES OF CDMGTE CDTE SUPERLATTICES/
Authors: GERTHSEN D MEERTENS D HEINKE H WAAG A LITZ T LANDWEHR G
Citation: D. Gerthsen et al., STRUCTURAL-PROPERTIES OF CDMGTE CDTE SUPERLATTICES/, Journal of applied physics, 75(11), 1994, pp. 7323-7329
GROWTH OF MGTE AND CD1-XMGXTE THIN-FILMS BY MOLECULAR-BEAM EPITAXY
Authors: WAAG A HEINKE H SCHOLL S BECKER CR LANDWEHR G
Citation: A. Waag et al., GROWTH OF MGTE AND CD1-XMGXTE THIN-FILMS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 607-611
Risultati: 1-25 | 26-27