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Results: 1-25/59
Authors:
KUNA SAE
COLEMAN PG
NEJIM A
CRISTIANO F
HEMMENT PLF
Citation: Sae. Kuna et al., DEFECTS IN GE-IMPLANTED SI STUDIED BY SLOW POSITRON IMPLANTATION SPECTROSCOPY(), Semiconductor science and technology, 13(4), 1998, pp. 394-398
Authors:
SUPRUNBELEVICH Y
CRISTIANO F
NEJIM A
HEMMENT PLF
SEALY BJ
Citation: Y. Suprunbelevich et al., MECHANICAL STRAIN AND DEFECTS IN THE END-OF-RANGE REGION IN SILICON IMPLANTED WITH GE-IMPLANTED WITH C+ IONS( AND CO), Semiconductor science and technology, 13(2), 1998, pp. 220-225
Authors:
SUPRUNBELEVICH Y
CRISTIANO F
NEJIM A
HEMMENT PLF
SEALY BJ
Citation: Y. Suprunbelevich et al., EVOLUTION OF MECHANICAL STRAIN AND EXTENDED DEFECTS IN ANNEALED (100)SILICON SAMPLES IMPLANTED WITH GE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(1-2), 1998, pp. 91-98
Authors:
ZHANG M
WANG LW
GAO JX
LIN CL
HEMMENT PLF
GUTJAHR K
GOSELE U
Citation: M. Zhang et al., GETTERING OF CU BY HE-INDUCED CAVITIES IN SIMOX MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(3-4), 1998, pp. 360-364
Authors:
ZHANG M
LIN CL
HEMMENT PLF
GUTJAHR K
GOSELE U
Citation: M. Zhang et al., STUDY OF CU GETTERING TO CAVITIES IN SEPARATION BY IMPLANTATION OF OXYGEN SUBSTRATES, Applied physics letters, 72(7), 1998, pp. 830-832
Authors:
CRISTIANO F
BONAFOS C
NEJIM A
LOMBARDO S
OMRI M
ALQUIER D
MARTINEZ A
CAMPISANO SU
HEMMENT PLF
CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
Authors:
FRANGIS N
STOEMENOS J
VANLANDUYT J
NEJIM A
HEMMENT PLF
Citation: N. Frangis et al., THE FORMATION OF 3C-SIC IN CRYSTALLINE SI BY CARBON IMPLANTATION AT 950-DEGREES-C AND ANNEALING - A STRUCTURAL STUDY, Journal of crystal growth, 181(3), 1997, pp. 218-228
Authors:
LARSEN AN
ORAIFEARTAIGH C
BARKLIE RC
HOLM B
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
NIPOTI R
LINDNER JKN
MESLI A
GROB JJ
CRISTIANO F
HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
Authors:
FREY L
STOEMENOS J
SCHORK R
NEJIM A
HEMMENT PLF
Citation: L. Frey et al., SYNTHESIS OF SIC BY HIGH-TEMPERATURE C- THE ROLE OF SI( IMPLANTATION INTO SIO2 )SIO2 INTERFACE/, Journal of the Electrochemical Society, 144(12), 1997, pp. 4314-4320
EXPERIMENTAL STUDIES OF SUPERHARD MATERIALS CARBON NITRIDE CNX PREPARED BY ION-BEAM SYNTHESIS METHOD
Authors:
XIN HP
LIN CL
XU HP
ZOU SC
SHI XH
WU XL
ZHU H
HEMMENT PLF
Citation: Hp. Xin et al., EXPERIMENTAL STUDIES OF SUPERHARD MATERIALS CARBON NITRIDE CNX PREPARED BY ION-BEAM SYNTHESIS METHOD, SCI CHINA E, 39(4), 1996, pp. 404-411
Authors:
QIAN YH
EVANS JH
GILES LF
NEJIM A
HEMMENT PLF
Citation: Yh. Qian et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF EXTENDED DEFECTS IN SIMOX STRUCTURES, Semiconductor science and technology, 11(1), 1996, pp. 27-33
Authors:
KOMODA T
WEBER J
HOMEWOOD KP
HEMMENT PLF
SEALY BJ
Citation: T. Komoda et al., EFFECT OF FORMING GAS ANNEALS ON THE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE SILICON FORMED BY SI+ IMPLANTATION INTO SIO2 MATRIX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 93-96
Authors:
CRISTIANO F
NEJIM A
DEMAUDUIT B
CLAVERIE A
HEMMENT PLF
Citation: F. Cristiano et al., CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 156-160
Authors:
ORAIFEARTAIGH C
BARKLIE RC
LARSEN AN
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
LINDNER JKN
CRISTIANO F
HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
Authors:
FAN TW
ZOU LF
WANG ZG
HEMMENT PLF
GREAVES SJ
WATTS JF
Citation: Tw. Fan et al., AGGREGATION AND PRECIPITATION IN HIGH-DOSE AS ION-IMPLANTED GE0.5SI0.5 ALLOY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(4), 1996, pp. 510-514
Authors:
HEMMENT PLF
Citation: Plf. Hemment, E-MRS95 SYMPOSIUM-C - PREFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 9-10
Authors:
KOMODA T
KELLY JP
GWILLIAM RM
HEMMENT PLF
SEALY BJ
Citation: T. Komoda et al., EFFECT OF THE GAS AMBIENT ON THE INTENSITY OF THE VISIBLE PHOTOLUMINESCENCE FROM SI MICROCRYSTALLITES IN A SIO2 MATRIX FORMED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 219-222
Authors:
NEJIM A
CRISTIANO F
HEMMENT PLF
HOPE DAO
GLASPER JL
PICKERING C
LEONG WY
ROBBINS DJ
Citation: A. Nejim et al., A STUDY OF BASE CONTACT FORMATION IN EPITAXIAL SI SI0.88GE0.12 HBT STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 305-310
Authors:
CRISTIANO F
NEJIM A
HOPE DAO
HOULTON MR
HEMMENT PLF
Citation: F. Cristiano et al., STRUCTURAL STUDIES OF ION-BEAM SYNTHESIZED SIGE SI HETEROSTRUCTURES FOR HBT APPLICATIONS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 311-315
Authors:
FRANGIS N
NEJIM A
HEMMENT PLF
STOEMENOS J
VANLANDUYT J
Citation: N. Frangis et al., ION-BEAM SYNTHESIS OF BETA-SIC AT 950-DEGREES-C AND STRUCTURAL CHARACTERIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 325-329
Authors:
KANEMITSU Y
SHIMIZU N
KOMODA T
HEMMENT PLF
SEALY BJ
Citation: Y. Kanemitsu et al., PHOTOLUMINESCENT SPECTRUM AND DYNAMICS OF SI-ION-IMPLANTED AND THERMALLY ANNEALED SIO2 GLASSES(), Physical review. B, Condensed matter, 54(20), 1996, pp. 14329-14332
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., OPTICAL INVESTIGATION OF STRUCTURES FORMED BY 2 MEV OXYGEN IMPLANTATION INTO SILICON, Thin solid films, 289(1-2), 1996, pp. 90-94
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
SKORUPA W
Citation: N. Hatzopoulos et al., FORMATION AND CHARACTERIZATION OF SI SIO2 MULTILAYER STRUCTURES BY OXYGEN-ION IMPLANTATION INTO SILICON/, Journal of applied physics, 80(9), 1996, pp. 4960-4970
Authors:
SIAPKAS DI
HATZOPOULOS N
KATSIDIS CC
ZORBA T
MITSAS CL
HEMMENT PLF
Citation: Di. Siapkas et al., STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF HIGH-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES USING INFRARED-SPECTROSCOPY, Journal of the Electrochemical Society, 143(9), 1996, pp. 3019-3032
Authors:
HE ZP
CRISTIANO F
ZHOU ZY
QIAN YH
CHEN LY
LIN CL
HEMMENT PLF
ZOU SC
Citation: Zp. He et al., TRANSMISSION ELECTRON-MICROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY STUDIES OF DAMAGE LAYER INDUCED BY LARGE TILT ANGLE ION-IMPLANTATION, Journal of the Electrochemical Society, 143(8), 1996, pp. 2636-2640