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Results: 1-23 |
Results: 23

Authors: GROSJEAN M HERINO R LINCOT D
Citation: M. Grosjean et al., INCORPORATION OF CADMIUM-SULFIDE INTO NANOPOROUS SILICON BY SEQUENTIAL CHEMICAL-DEPOSITION FROM SOLUTION, Journal of the Electrochemical Society, 145(7), 1998, pp. 2448-2452

Authors: HERINO R
Citation: R. Herino, POROUS SILICON FOR MICROELECTRONICS AND OPTOELECTRONICS, Materials science and technology, 13(11), 1997, pp. 965-970

Authors: MONTES L MULLER F GASPARD F HERINO R
Citation: L. Montes et al., INVESTIGATION ON THE ELECTROCHEMICAL DEPOSITION OF CADMIUM TELLURIDE IN POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 35-38

Authors: SEDLACIK R OSWALD J HERINO R
Citation: R. Sedlacik et al., PHOTOCONDUCTIVITY OF POROUS SILICON IN CONTACT WITH A LIQUID ELECTROLYTE, Thin solid films, 297(1-2), 1997, pp. 64-67

Authors: HERINO R
Citation: R. Herino, VISIBLE-LIGHT EMISSION FROM POROUS SILICON UNDER OPTICAL AND ELECTRICAL EXCITATION, Journal de chimie physique et de physico-chimie biologique, 93(4), 1996, pp. 641-649

Authors: PAPALEO RM HERINO R HALLEN A DEMIREV P SUNDQVIST BUR
Citation: Rm. Papaleo et al., SWIFT ATOMIC ION IRRADIATION OF C-60 FILMS - DEPENDENCE OF THE DAMAGECROSS-SECTION ON THE PRIMARY ION STOPPING POWER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 274-278

Authors: MUNDER H HERINO R LANG W
Citation: H. Munder et al., PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1995 SPRING CONFERENCE, SYMPOSIUM .1. POROUS SILICON - MATERIAL, TECHNOLOGY ANDDEVICES, STRASBOURG, FRANCE, MAY 22-26, 1995 - PREFACE, Thin solid films, 276(1-2), 1996, pp. 11-11

Authors: HORY MA BSIESY A HERINO R LIGEON M MULLER F VIAL JC
Citation: Ma. Hory et al., INVESTIGATION OF THE QUENCHING MECHANISMS OF THE POROUS SILICON LUMINESCENCE, Thin solid films, 276(1-2), 1996, pp. 130-133

Authors: BSIESY A HORY MA GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE, Microelectronic engineering, 28(1-4), 1995, pp. 233-236

Authors: BILLAT S GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN F VIAL JC
Citation: S. Billat et al., ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME, Thin solid films, 263(2), 1995, pp. 238-242

Authors: HERINO R LANG W
Citation: R. Herino et W. Lang, PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1994 - PREFACE, Thin solid films, 255(1-2), 1995, pp. 11-12

Authors: BSIESY A GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE, Thin solid films, 255(1-2), 1995, pp. 80-86

Authors: HORY MA HERINO R LIGEON M MULLER F GASPARD F MIHALCESCU I VIAL JC
Citation: Ma. Hory et al., FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS, Thin solid films, 255(1-2), 1995, pp. 200-203

Authors: SERRE C BARRET S HERINO R
Citation: C. Serre et al., INFLUENCE OF THE ELECTROLYTE-COMPOSITION AND PH ON THE ANODIC-DISSOLUTION OF P-TYPE SI IN AQUEOUS HF SOLUTIONS, Journal of electroanalytical chemistry [1992], 370(1-2), 1994, pp. 145-149

Authors: GERSTENMAYER JL VIBERT P MERCIER P RAYER C HYVERNAGE M HERINO R BSIESY A
Citation: Jl. Gerstenmayer et al., POROUS SILICON - X-RAYS SENSITIVITY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 353(1-3), 1994, pp. 299-301

Authors: SERRE C BARRET S HERINO R
Citation: C. Serre et al., CHARACTERIZATION OF THE ELECTROPOLISHING LAYER DURING ANODIC ETCHING OF P-TYPE SILICON IN AQUEOUS HF SOLUTIONS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2049-2053

Authors: BSIESY A VIAL JC GASPARD F HERINO R LIGEON M MIHALCESCU I MULLER F ROMESTAIN R
Citation: A. Bsiesy et al., LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3071-3076

Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE, Applied physics letters, 65(26), 1994, pp. 3371-3373

Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R
Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602

Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE, Physical review letters, 71(4), 1993, pp. 637-640

Authors: BSIESY A MULLER F MIHALCESCU I LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE, Journal of luminescence, 57(1-6), 1993, pp. 29-32

Authors: MULLER F HERINO R LIGEON M GASPARD F ROMESTAIN R VIAL JC BSIESY A
Citation: F. Muller et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS, Journal of luminescence, 57(1-6), 1993, pp. 283-292

Authors: LIGEON M MULLER F HERINO R GASPARD F VIAL JC ROMESTAIN R BILLAT S BSIESY A
Citation: M. Ligeon et al., ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON, Journal of applied physics, 74(2), 1993, pp. 1265-1271
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