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Results: 1-25 |
Results: 25
NEW MEASUREMENT TECHNIQUE FOR SUB-BANDGAP IMPACT IONIZATION CURRENT BY TRANSIENT CHARACTERISTICS OF PARTIALLY DEPLETED SOI MOSFETS
Authors: SARAYA T TAKAMIYA M DUYET TN HIRAMOTO T
Citation: T. Saraya et al., NEW MEASUREMENT TECHNIQUE FOR SUB-BANDGAP IMPACT IONIZATION CURRENT BY TRANSIENT CHARACTERISTICS OF PARTIALLY DEPLETED SOI MOSFETS, JPN J A P 1, 37(3B), 1998, pp. 1271-1273
SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: DUYET TN ISHIKURO H TAKAMIYA M SARAYA T HIRAMOTO T
Citation: Tn. Duyet et al., SUPPRESSION OF GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN THIN-FILM SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 2, 37(7B), 1998, pp. 855-858
PROGNOSTIC VALUE OF HYPERCAPNIA IN PATIENTS WITH CHRONIC RESPIRATORY-FAILURE DURING LONG-TERM OXYGEN-THERAPY
Authors: AIDA A MIYAMOTO K NISHIMURA M AIBA M KIRA S KAWAKAMI Y KISHI F HIDA W TAKAHASHI K SUZUKI E MOHRI M FUKUCHI Y KAWASHIRO T KONNO K HORIE T KITAMURA S KURIYAMA T YAMAGISHI F OHTA Y TAKAGI K SUZUKI S KOBAYASHI T SUETSUGU S KURIHARA N KUNO K KIMURA K ISHIMARU O NARITA N SASAKI T HIRAMOTO T UEDA N HIROSE T FUKUNAGA H KOREEDA S MIYAGI S
Citation: A. Aida et al., PROGNOSTIC VALUE OF HYPERCAPNIA IN PATIENTS WITH CHRONIC RESPIRATORY-FAILURE DURING LONG-TERM OXYGEN-THERAPY, American journal of respiratory and critical care medicine, 158(1), 1998, pp. 188-193
HOPPING TRANSPORT IN MULTIPLE-DOT SILICON SINGLE-ELECTRON MOSFET
Authors: ISHIKURO H HIRAMOTO T
Citation: H. Ishikuro et T. Hiramoto, HOPPING TRANSPORT IN MULTIPLE-DOT SILICON SINGLE-ELECTRON MOSFET, Solid-state electronics, 42(7-8), 1998, pp. 1425-1428
FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE
Authors: MUKAIYAMA T SAITO K ISHIKURO H TAKAMIYA M SARAYA T HIRAMOTO T
Citation: T. Mukaiyama et al., FABRICATION OF GATE-ALL-AROUND MOSFET BY SILICON ANISOTROPIC ETCHING TECHNIQUE, Solid-state electronics, 42(7-8), 1998, pp. 1623-1626
EFFECTS OF TRAPS ON CHARGE STORAGE CHARACTERISTICS IN METAL-OXIDE-SEMICONDUCTOR MEMORY STRUCTURES BASED ON SILICON NANOCRYSTALS
Authors: SHI Y SAITO K ISHIKURO H HIRAMOTO T
Citation: Y. Shi et al., EFFECTS OF TRAPS ON CHARGE STORAGE CHARACTERISTICS IN METAL-OXIDE-SEMICONDUCTOR MEMORY STRUCTURES BASED ON SILICON NANOCRYSTALS, Journal of applied physics, 84(4), 1998, pp. 2358-2360
ROOM-TEMPERATURE COULOMB-BLOCKADE AND LOW-TEMPERATURE HOPPING TRANSPORT IN A MULTIPLE-DOT-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR
Authors: HIRAMOTO T ISHIKURO H FUJII T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., ROOM-TEMPERATURE COULOMB-BLOCKADE AND LOW-TEMPERATURE HOPPING TRANSPORT IN A MULTIPLE-DOT-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR, JPN J A P 1, 36(6B), 1997, pp. 4139-4142
QUANTUM-MECHANICAL EFFECTS IN THE SILICON QUANTUM-DOT IN A SINGLE-ELECTRON TRANSISTOR
Authors: ISHIKURO H HIRAMOTO T
Citation: H. Ishikuro et T. Hiramoto, QUANTUM-MECHANICAL EFFECTS IN THE SILICON QUANTUM-DOT IN A SINGLE-ELECTRON TRANSISTOR, Applied physics letters, 71(25), 1997, pp. 3691-3693
EXTREMELY LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW-TEMPERATURES
Authors: ISHIKURO H SARAYA T HIRAMOTO T IKOMA T
Citation: H. Ishikuro et al., EXTREMELY LARGE-AMPLITUDE RANDOM TELEGRAPH SIGNALS IN A VERY NARROW SPLIT-GATE MOSFET AT LOW-TEMPERATURES, JPN J A P 1, 35(2B), 1996, pp. 858-860
FABRICATION OF SI NANOSTRUCTURES FOR SINGLE-ELECTRON DEVICE APPLICATIONS BY ANISOTROPIC ETCHING
Authors: HIRAMOTO T ISHIKURO H SAITO K FUJII T SARAYA T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., FABRICATION OF SI NANOSTRUCTURES FOR SINGLE-ELECTRON DEVICE APPLICATIONS BY ANISOTROPIC ETCHING, JPN J A P 1, 35(12B), 1996, pp. 6664-6667
CHARACTERIZATION OF PRECISELY WIDTH-CONTROLLED SI QUANTUM WIRES FABRICATED ON SOI SUBSTRATES
Authors: HIRAMOTO T ISHIKURO H FUJII T SARAYA T HASHIGUCHI G IKOMA T
Citation: T. Hiramoto et al., CHARACTERIZATION OF PRECISELY WIDTH-CONTROLLED SI QUANTUM WIRES FABRICATED ON SOI SUBSTRATES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 95-97
COULOMB-BLOCKADE OSCILLATIONS AT ROOM-TEMPERATURE IN A SI QUANTUM-WIRE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FABRICATED BY ANISOTROPIC ETCHING ON A SILICON-ON-INSULATOR SUBSTRATE
Authors: ISHIKURO H FUJII T SARAYA T HASHIGUCHI G HIRAMOTO T IKOMA T
Citation: H. Ishikuro et al., COULOMB-BLOCKADE OSCILLATIONS AT ROOM-TEMPERATURE IN A SI QUANTUM-WIRE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FABRICATED BY ANISOTROPIC ETCHING ON A SILICON-ON-INSULATOR SUBSTRATE, Applied physics letters, 68(25), 1996, pp. 3585-3587
GENDER EFFECT ON PROGNOSIS OF PATIENTS RECEIVING LONG-TERM HOME OXYGEN-THERAPY
Authors: MIYAMOTO K AIDA A NISHIMURA M AIBA M KIRA S KAWAKAMI Y MOHRI M KISHI F HIDA W TAKAHASHI K SUZUKI A FUKUCHI Y KAWASHIRO T HORIE T KITAMURA S KURIYAMA T NAKATA K TAKAGI K SUZUKI S KOBAYASHI T SUETSUGU S KURIHARA N KUNO K KIMURA K SASAKI T HIRAMOTO T UEDA N HIROSE T FUKUNAGA H MIYAGI S
Citation: K. Miyamoto et al., GENDER EFFECT ON PROGNOSIS OF PATIENTS RECEIVING LONG-TERM HOME OXYGEN-THERAPY, American journal of respiratory and critical care medicine, 152(3), 1995, pp. 972-976
THE RELATIONSHIP BETWEEN SYSTEMIC RESISTANCE INDUCED BY PRUNING AND ACCUMULATION OF ANTIFUNGAL SUBSTANCES IN BARLEY SEEDLINGS
Authors: HIRAMOTO T ABE N TOBIMATSU R SHIRAISHI T OKU H YAMADA T ICHINOSE Y
Citation: T. Hiramoto et al., THE RELATIONSHIP BETWEEN SYSTEMIC RESISTANCE INDUCED BY PRUNING AND ACCUMULATION OF ANTIFUNGAL SUBSTANCES IN BARLEY SEEDLINGS, Journal of phytopathology, 143(1), 1995, pp. 43-46
SIGNAL MOLECULES INDUCING SYSTEMIC RESISTANCE AND SUSCEPTIBILITY IN BARLEY SEEDLINGS
Authors: HIRAMOTO T TOBIMATSU R ABE N SHIRAISHI T OKU H YAMADA T ICHINOSE Y
Citation: T. Hiramoto et al., SIGNAL MOLECULES INDUCING SYSTEMIC RESISTANCE AND SUSCEPTIBILITY IN BARLEY SEEDLINGS, Journal of phytopathology, 143(1), 1995, pp. 47-51
COLOCALIZATION OF SCAVENGER RECEPTOR IN CD68 POSITIVE FOAM CELLS IN VERRUCIFORM XANTHOMA
Authors: FURUE M SUZUKI H KODAMA T HIRAMOTO T SUGIYAMA H TAMAKI K
Citation: M. Furue et al., COLOCALIZATION OF SCAVENGER RECEPTOR IN CD68 POSITIVE FOAM CELLS IN VERRUCIFORM XANTHOMA, Journal of dermatological science, 10(3), 1995, pp. 213-219
A BIPOLAR-BASED 0.5 MU-M BICMOS TECHNOLOGY ON BONDED SOI FOR HIGH-SPEED LSIS
Authors: YOSHIDA M HIRAMOTO T FUJIWARA T HASHIMOTO T MURAYA T MURATA S WATANABE K TAMBA N IKEDA T
Citation: M. Yoshida et al., A BIPOLAR-BASED 0.5 MU-M BICMOS TECHNOLOGY ON BONDED SOI FOR HIGH-SPEED LSIS, IEICE transactions on electronics, E77C(8), 1994, pp. 1395-1403
A 1.5-NS CYCLE-TIME 18-KB PSEUDO-DUAL-PORT RAM WITH 9K LOGIC GATES
Authors: IWABUCHI M USAMI M KASHIYAMA M OOMORI T MURATA S HIRAMOTO T HASHIMOTO T NAKAJIMA Y
Citation: M. Iwabuchi et al., A 1.5-NS CYCLE-TIME 18-KB PSEUDO-DUAL-PORT RAM WITH 9K LOGIC GATES, IEICE transactions on electronics, E77C(5), 1994, pp. 749-755
A 1.5-NS CYCLE-TIME 18-KB PSEUDO-DUAL-PORT RAM WITH 9K LOGIC GATES
Authors: IWABUCHI M USAMI M KASHIYAMA M OOMORI T MURATA S HIRAMOTO T HASHIMOTO T NAKAJIMA Y
Citation: M. Iwabuchi et al., A 1.5-NS CYCLE-TIME 18-KB PSEUDO-DUAL-PORT RAM WITH 9K LOGIC GATES, IEEE journal of solid-state circuits, 29(4), 1994, pp. 419-425
A 1.5-NS 256-KB BICMOS SRAM WITH 60-PS 11-K LOGIC GATES
Authors: TAMBA N ANZAI A AKIMOTO K OHAYASHI M HIRAMOTO T KOKUBU T OHMORI S MURAYA T KISHIMOTO A TSUJI S HAYASHI H HANDA N IGARASHI T NAMBU H YOSHIDA M FUJIWARA T WATANABE K UCHIDA A ODAKA M YAMAGUCHI K IKEDA T
Citation: N. Tamba et al., A 1.5-NS 256-KB BICMOS SRAM WITH 60-PS 11-K LOGIC GATES, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1344-1352
A 1.5-NS 256-KB BICMOS SRAM WITH 60-PS 11-K LOGIC GATES
Authors: TAMBA N ANZAI A AKIMOTO K OHAYASHI M HIRAMOTO T KOKUBU T OHMORI S MURAYA T KISHIMOTO A TSUJI S HAYASHI H HANDA N IGARASHI T NAMBU H YOSHIDA M FUJIWARA T WATANABE K UCHIDA A ODAKA M YAMAGUCHI K IKEDA T
Citation: N. Tamba et al., A 1.5-NS 256-KB BICMOS SRAM WITH 60-PS 11-K LOGIC GATES, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1344-1352
CONDUCTOMETRIC STUDY OF ION ASSOCIATION BETWEEN TRIS(OXALATO)CHROMATE(III) AND ALKALI-METAL IONS AT TEMPERATURES FROM 0 TO 50 DEGREES-C
Authors: YOKOYAMA H HIRAMOTO T SHINOZAKI K
Citation: H. Yokoyama et al., CONDUCTOMETRIC STUDY OF ION ASSOCIATION BETWEEN TRIS(OXALATO)CHROMATE(III) AND ALKALI-METAL IONS AT TEMPERATURES FROM 0 TO 50 DEGREES-C, Bulletin of the Chemical Society of Japan, 67(8), 1994, pp. 2086-2092
CONDUCTOMETRIC STUDY OF FIRST-ION AND 2ND-ION ASSOCIATIONS OF HEXAAMMINECOBALT(III) AND TRIS(ETHYLENEDIAMINE)COBALT(III) IONS WITH SULFATE-IONS AT TEMPERATURES FROM 0-DEGREES-C TO 50-DEGREES-C
Authors: YOKOYAMA H KON H HIRAMOTO T SHINOZAKI K
Citation: H. Yokoyama et al., CONDUCTOMETRIC STUDY OF FIRST-ION AND 2ND-ION ASSOCIATIONS OF HEXAAMMINECOBALT(III) AND TRIS(ETHYLENEDIAMINE)COBALT(III) IONS WITH SULFATE-IONS AT TEMPERATURES FROM 0-DEGREES-C TO 50-DEGREES-C, Bulletin of the Chemical Society of Japan, 67(12), 1994, pp. 3179-3186
REDUNDANCY TECHNIQUE FOR ULTRA-HIGH-SPEED STATIC RAMS
Authors: NAMBU H KANETANI K IDEI Y YAMAGUCHI K HIRAMOTO T TAMBA N WATANABE K ODAKA M IKEDA T OHHATA K SAKURAI Y HOMMA N
Citation: H. Nambu et al., REDUNDANCY TECHNIQUE FOR ULTRA-HIGH-SPEED STATIC RAMS, IEICE transactions on electronics, E76C(4), 1993, pp. 641-648
NOISE-REDUCTION TECHNIQUES FOR A 64-KB ECL-CMOS SRAM WITH A 2-NS CYCLE TIME
Authors: OHHATA K SAKURAI Y NAMBU H KANETANI K IDEI Y HIRAMOTO T TAMBA N YAMAGUCHI K ODAKA M WATANABE K IKEDA T HOMMA N
Citation: K. Ohhata et al., NOISE-REDUCTION TECHNIQUES FOR A 64-KB ECL-CMOS SRAM WITH A 2-NS CYCLE TIME, IEICE transactions on electronics, E76C(11), 1993, pp. 1611-1619
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