Citation: H. Tanaka et al., KINETIC-ANALYSIS OF THE C49-TO-C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS BY IN-SITU OBSERVATION, JPN J A P 1, 37(8), 1998, pp. 4284-4287
Authors:
IKEGAMI N
YABATA A
LIU GL
UCHIDA H
HIRASHITA N
KANAMORI J
Citation: N. Ikegami et al., VERTICAL PROFILE CONTROL IN ULTRAHIGH-ASPECT-RATIO CONTACT HOLE ETCHING WITH 0.05-MU-M-DIAMETER RANGE, JPN J A P 1, 37(4B), 1998, pp. 2337-2342
Citation: S. Ikeda et al., CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDIES ON INTRINSICBREAKDOWN SPOTS OF THIN GATE OXIDES, JPN J A P 1, 36(5A), 1997, pp. 2561-2564
Citation: H. Tanaka et al., IN-SITU OBSERVATION OF THE C49-TO-C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS BY TRANSMISSION ELECTRON-MICROSCOPY, JPN J A P 2, 35(4B), 1996, pp. 479-481
Authors:
LIU GL
UCHIDA H
AIKAWA I
KURODA S
HIRASHITA N
Citation: Gl. Liu et al., ACCURATE SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF SHALLOW DOPING PROFILES IN SI BASED ON THE INTERNAL STANDARD METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 324-328
Authors:
HIRASHITA N
MIYAKAWA Y
FUJITA K
KANAMORI J
Citation: N. Hirashita et al., REACTION STUDIES BETWEEN FLUOROCARBON FILMS AND SI USING TEMPERATURE-PROGRAMMED X-RAY PHOTOELECTRON AND DESORPTION SPECTROSCOPIES, JPN J A P 1, 34(4B), 1995, pp. 2137-2141
Citation: M. Okihara et al., EFFECT OF STRESS ON OXIDE EDGE SHAPE OF LOCAL OXIDATION OF SILICON FOR VARIOUS OXIDATION TEMPERATURES, JPN J A P 1, 34(4A), 1995, pp. 1822-1826
Authors:
TOKITOH S
UCHIDA H
UCHIDA H
OKUNO Y
LIU GL
SAKAYA Y
HIRASHITA N
Citation: S. Tokitoh et al., STUDIES OF CORROSIVE OUTGASSES FROM VIA HOLES USING THERMAL-DESORPTION SPECTROSCOPY, JPN J A P 1, 34(2B), 1995, pp. 1021-1025
Citation: K. Fujita et al., X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES ON PYROLYSIS OF PLASMA-POLYMERIZED FLUOROCARBON FILMS ON SI, JPN J A P 1, 34(1), 1995, pp. 304-306
Citation: H. Tanaka et al., INTERFACIAL REACTIONS IN THE ZR-SI SYSTEM STUDIED BY IN-SITU TRANSMISSION ELECTRON-MICROSCOPY, Journal of applied physics, 78(8), 1995, pp. 4982-4987
Authors:
OKIHARA M
HIRASHITA N
HASHIMOTO K
ONODA H
Citation: M. Okihara et al., TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF INTERFACIAL REACTIONSIN HIGH-TEMPERATURE SPUTTERED AL ALLOY TIN SYSTEM/, Applied physics letters, 66(11), 1995, pp. 1328-1330
Citation: K. Fujita et N. Hirashita, STEP-EDGE STRUCTURES ON SI(112) AND (113) SURFACES TREATED IN NH4F SOLUTION, JPN J A P 1, 33(1B), 1994, pp. 399-403
Authors:
MIYAKAWA Y
FUJITA K
HIRASHITA N
IKEGAMI N
HASHIMOTO J
MATSUI T
KANAMORI J
Citation: Y. Miyakawa et al., THERMAL-DESORPTION SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CFX LAYER DEPOSITED ON SI AND SIO2, JPN J A P 1, 33(12B), 1994, pp. 7047-7052
Citation: K. Fujita et N. Hirashita, CORRUGATED STRUCTURES ON SI(110) SURFACES TREATED IN AMMONIUM FLUORIDE SOLUTIONS, JPN J A P 2, 33(8B), 1994, pp. 120001145-120001148
Citation: N. Hirashita et T. Uchiyama, QUANTITATIVE DESORPTION ANALYSIS OF ULTRA LARGE-SCALE INTEGRATION MATERIALS BY THERMAL-DESORPTION SPECTROSCOPY, Bunseki Kagaku, 43(10), 1994, pp. 757-764
Citation: N. Hirashita et al., THERMAL-DESORPTION AND INFRARED STUDIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO FILMS WITH TETRAETHYLORTHOSILICATE, JPN J A P 1, 32(4), 1993, pp. 1787-1793
Citation: H. Tanaka et al., THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2 SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2231-2236
Citation: H. Uchida et al., THE EFFECT OF OXIDE CHARGES AT LOCOS ISOLATION EDGES ON OXIDE BREAKDOWN, I.E.E.E. transactions on electron devices, 40(10), 1993, pp. 1818-1822