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Results: 1-18 |
Results: 18
KINETIC-ANALYSIS OF THE C49-TO-C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS BY IN-SITU OBSERVATION
Authors: TANAKA H HIRASHITA N SINCLAIR R
Citation: H. Tanaka et al., KINETIC-ANALYSIS OF THE C49-TO-C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS BY IN-SITU OBSERVATION, JPN J A P 1, 37(8), 1998, pp. 4284-4287
VERTICAL PROFILE CONTROL IN ULTRAHIGH-ASPECT-RATIO CONTACT HOLE ETCHING WITH 0.05-MU-M-DIAMETER RANGE
Authors: IKEGAMI N YABATA A LIU GL UCHIDA H HIRASHITA N KANAMORI J
Citation: N. Ikegami et al., VERTICAL PROFILE CONTROL IN ULTRAHIGH-ASPECT-RATIO CONTACT HOLE ETCHING WITH 0.05-MU-M-DIAMETER RANGE, JPN J A P 1, 37(4B), 1998, pp. 2337-2342
CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDIES ON INTRINSICBREAKDOWN SPOTS OF THIN GATE OXIDES
Authors: IKEDA S OKIHARA M UCHIDA H HIRASHITA N
Citation: S. Ikeda et al., CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDIES ON INTRINSICBREAKDOWN SPOTS OF THIN GATE OXIDES, JPN J A P 1, 36(5A), 1997, pp. 2561-2564
IN-SITU OBSERVATION OF THE C49-TO-C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: TANAKA H HIRASHITA N SINCLAIR R
Citation: H. Tanaka et al., IN-SITU OBSERVATION OF THE C49-TO-C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS BY TRANSMISSION ELECTRON-MICROSCOPY, JPN J A P 2, 35(4B), 1996, pp. 479-481
ACCURATE SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF SHALLOW DOPING PROFILES IN SI BASED ON THE INTERNAL STANDARD METHOD
Authors: LIU GL UCHIDA H AIKAWA I KURODA S HIRASHITA N
Citation: Gl. Liu et al., ACCURATE SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF SHALLOW DOPING PROFILES IN SI BASED ON THE INTERNAL STANDARD METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 324-328
REACTION STUDIES BETWEEN FLUOROCARBON FILMS AND SI USING TEMPERATURE-PROGRAMMED X-RAY PHOTOELECTRON AND DESORPTION SPECTROSCOPIES
Authors: HIRASHITA N MIYAKAWA Y FUJITA K KANAMORI J
Citation: N. Hirashita et al., REACTION STUDIES BETWEEN FLUOROCARBON FILMS AND SI USING TEMPERATURE-PROGRAMMED X-RAY PHOTOELECTRON AND DESORPTION SPECTROSCOPIES, JPN J A P 1, 34(4B), 1995, pp. 2137-2141
EFFECT OF STRESS ON OXIDE EDGE SHAPE OF LOCAL OXIDATION OF SILICON FOR VARIOUS OXIDATION TEMPERATURES
Authors: OKIHARA M KURODA S ITOH M HIRASHITA N
Citation: M. Okihara et al., EFFECT OF STRESS ON OXIDE EDGE SHAPE OF LOCAL OXIDATION OF SILICON FOR VARIOUS OXIDATION TEMPERATURES, JPN J A P 1, 34(4A), 1995, pp. 1822-1826
STUDIES OF CORROSIVE OUTGASSES FROM VIA HOLES USING THERMAL-DESORPTION SPECTROSCOPY
Authors: TOKITOH S UCHIDA H UCHIDA H OKUNO Y LIU GL SAKAYA Y HIRASHITA N
Citation: S. Tokitoh et al., STUDIES OF CORROSIVE OUTGASSES FROM VIA HOLES USING THERMAL-DESORPTION SPECTROSCOPY, JPN J A P 1, 34(2B), 1995, pp. 1021-1025
X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES ON PYROLYSIS OF PLASMA-POLYMERIZED FLUOROCARBON FILMS ON SI
Authors: FUJITA K MIYAKAWA Y HIRASHITA N
Citation: K. Fujita et al., X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES ON PYROLYSIS OF PLASMA-POLYMERIZED FLUOROCARBON FILMS ON SI, JPN J A P 1, 34(1), 1995, pp. 304-306
INTERFACIAL REACTIONS IN THE ZR-SI SYSTEM STUDIED BY IN-SITU TRANSMISSION ELECTRON-MICROSCOPY
Authors: TANAKA H KONNO TJ SINCLAIR R HIRASHITA N
Citation: H. Tanaka et al., INTERFACIAL REACTIONS IN THE ZR-SI SYSTEM STUDIED BY IN-SITU TRANSMISSION ELECTRON-MICROSCOPY, Journal of applied physics, 78(8), 1995, pp. 4982-4987
TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF INTERFACIAL REACTIONSIN HIGH-TEMPERATURE SPUTTERED AL ALLOY TIN SYSTEM/
Authors: OKIHARA M HIRASHITA N HASHIMOTO K ONODA H
Citation: M. Okihara et al., TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF INTERFACIAL REACTIONSIN HIGH-TEMPERATURE SPUTTERED AL ALLOY TIN SYSTEM/, Applied physics letters, 66(11), 1995, pp. 1328-1330
STEP-EDGE STRUCTURES ON SI(112) AND (113) SURFACES TREATED IN NH4F SOLUTION
Authors: FUJITA K HIRASHITA N
Citation: K. Fujita et N. Hirashita, STEP-EDGE STRUCTURES ON SI(112) AND (113) SURFACES TREATED IN NH4F SOLUTION, JPN J A P 1, 33(1B), 1994, pp. 399-403
THERMAL-DESORPTION SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CFX LAYER DEPOSITED ON SI AND SIO2
Authors: MIYAKAWA Y FUJITA K HIRASHITA N IKEGAMI N HASHIMOTO J MATSUI T KANAMORI J
Citation: Y. Miyakawa et al., THERMAL-DESORPTION SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CFX LAYER DEPOSITED ON SI AND SIO2, JPN J A P 1, 33(12B), 1994, pp. 7047-7052
CORRUGATED STRUCTURES ON SI(110) SURFACES TREATED IN AMMONIUM FLUORIDE SOLUTIONS
Authors: FUJITA K HIRASHITA N
Citation: K. Fujita et N. Hirashita, CORRUGATED STRUCTURES ON SI(110) SURFACES TREATED IN AMMONIUM FLUORIDE SOLUTIONS, JPN J A P 2, 33(8B), 1994, pp. 120001145-120001148
QUANTITATIVE DESORPTION ANALYSIS OF ULTRA LARGE-SCALE INTEGRATION MATERIALS BY THERMAL-DESORPTION SPECTROSCOPY
Authors: HIRASHITA N UCHIYAMA T
Citation: N. Hirashita et T. Uchiyama, QUANTITATIVE DESORPTION ANALYSIS OF ULTRA LARGE-SCALE INTEGRATION MATERIALS BY THERMAL-DESORPTION SPECTROSCOPY, Bunseki Kagaku, 43(10), 1994, pp. 757-764
THERMAL-DESORPTION AND INFRARED STUDIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO FILMS WITH TETRAETHYLORTHOSILICATE
Authors: HIRASHITA N TOKITOH S UCHIDA H
Citation: N. Hirashita et al., THERMAL-DESORPTION AND INFRARED STUDIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO FILMS WITH TETRAETHYLORTHOSILICATE, JPN J A P 1, 32(4), 1993, pp. 1787-1793
THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2 SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS/
Authors: TANAKA H UCHIDA H AJIOKA T HIRASHITA N
Citation: H. Tanaka et al., THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2 SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2231-2236
THE EFFECT OF OXIDE CHARGES AT LOCOS ISOLATION EDGES ON OXIDE BREAKDOWN
Authors: UCHIDA H HIRASHITA N AJIOKA T
Citation: H. Uchida et al., THE EFFECT OF OXIDE CHARGES AT LOCOS ISOLATION EDGES ON OXIDE BREAKDOWN, I.E.E.E. transactions on electron devices, 40(10), 1993, pp. 1818-1822
Risultati: 1-18 |