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Results: 1-13 |
Results: 13
OUTLOOK FOR PHOTOVOLTAIC DEVELOPMENTS IN TAIWAN
Authors: HWANG HL HSU KYJ LEE WI SHING YH HSU KC TSENG BH
Citation: Hl. Hwang et al., OUTLOOK FOR PHOTOVOLTAIC DEVELOPMENTS IN TAIWAN, Progress in photovoltaics, 6(3), 1998, pp. 201-206
STUDY ON THE ELECTRICAL-CONDUCTION OF P(+) POROUS SILICON
Authors: YEH ECC CHAN JH SHIEH TH HSU KYJ
Citation: Ecc. Yeh et al., STUDY ON THE ELECTRICAL-CONDUCTION OF P(+) POROUS SILICON, Physica status solidi. a, Applied research, 165(1), 1998, pp. 63-67
ELECTRICAL CONDUCTANCE SIMULATION OF 2-DIMENSIONAL DIRECTIONAL SITE PERCOLATED NETWORKS FOR POROUS SILICON STRUCTURES
Authors: YEH ECC HSU KYJ
Citation: Ecc. Yeh et Kyj. Hsu, ELECTRICAL CONDUCTANCE SIMULATION OF 2-DIMENSIONAL DIRECTIONAL SITE PERCOLATED NETWORKS FOR POROUS SILICON STRUCTURES, Journal of applied physics, 83(1), 1998, pp. 326-331
COMPUTER-SIMULATION OF PERCOLATED POROUS SI STRUCTURE AND ITS APPLICATION TO ELECTRICAL-CONDUCTIVITY SIMULATION
Authors: YEH ECC CHIOU MS HSU KYJ
Citation: Ecc. Yeh et al., COMPUTER-SIMULATION OF PERCOLATED POROUS SI STRUCTURE AND ITS APPLICATION TO ELECTRICAL-CONDUCTIVITY SIMULATION, Thin solid films, 297(1-2), 1997, pp. 88-91
CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION (VOL 276, PG 147, 1996)
Authors: LEE CH YEH CC HWANG HL HSU KYJ
Citation: Ch. Lee et al., CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION (VOL 276, PG 147, 1996), Thin solid films, 293(1-2), 1997, pp. 334-334
ULTRA-THIN GATE DIELECTRICS GROWN BY LOW-TEMPERATURE PROCESSES FOR APPLICATIONS TO ULSI DEVICES
Authors: HWANG HL CHEN PC HSU KYJ
Citation: Hl. Hwang et al., ULTRA-THIN GATE DIELECTRICS GROWN BY LOW-TEMPERATURE PROCESSES FOR APPLICATIONS TO ULSI DEVICES, Applied surface science, 92, 1996, pp. 180-192
FORMATION OF BOTTOM OXIDES IN POROUS SILICON FILMS BY ANODIC-OXIDATION
Authors: LEE CH YEH CC LEE CH HSU KYJ
Citation: Ch. Lee et al., FORMATION OF BOTTOM OXIDES IN POROUS SILICON FILMS BY ANODIC-OXIDATION, Applied surface science, 92, 1996, pp. 621-625
RELIABILITY STUDY OF SUBMICRON TITANIUM SILICIDE CONTACTS
Authors: LIN CC CHEN WS HWANG HL HSU KYJ LIOU HK TU KN
Citation: Cc. Lin et al., RELIABILITY STUDY OF SUBMICRON TITANIUM SILICIDE CONTACTS, Applied surface science, 92, 1996, pp. 660-664
CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION
Authors: LEE CH YEH CC HWANG HL HSU KYJ
Citation: Ch. Lee et al., CHARACTERIZATION OF POROUS SILICON-ON-INSULATOR FILMS PREPARED BY ANODIC-OXIDATION, Thin solid films, 276(1-2), 1996, pp. 147-150
FUNDAMENTAL-STUDIES OF P-TYPE DOPING OF CDTE
Authors: HWANG HL HSU KYJ UENG HY
Citation: Hl. Hwang et al., FUNDAMENTAL-STUDIES OF P-TYPE DOPING OF CDTE, Journal of crystal growth, 161(1-4), 1996, pp. 73-81
CHARACTERIZATION OF ULTRATHIN DIELECTRICS GROWN BY MICROWAVE AFTERGLOW OXYGEN AND N2O PLASMA
Authors: CHEN PC HSU KYJ LIN JY HWANG HL
Citation: Pc. Chen et al., CHARACTERIZATION OF ULTRATHIN DIELECTRICS GROWN BY MICROWAVE AFTERGLOW OXYGEN AND N2O PLASMA, JPN J A P 1, 34(2B), 1995, pp. 973-977
A LATERAL INJECTION POROUS SILICON DEVICE STRUCTURE FOR LIGHT-EMITTING-DIODES
Authors: YEH CC LEE CH HWANG HL HSU KYJ
Citation: Cc. Yeh et al., A LATERAL INJECTION POROUS SILICON DEVICE STRUCTURE FOR LIGHT-EMITTING-DIODES, Thin solid films, 255(1-2), 1995, pp. 262-265
FUNDAMENTAL ELECTRICAL-PROPERTIES OF FLUORINATED AND N2O PLASMA-ANNEALED ULTRATHIN SILICON-OXIDES GROWN BY MICROWAVE PLASMA AFTERGLOW OXIDATION AT LOW-TEMPERATURES
Authors: CHEN PC HSU KYJ HWANG HL LIN JL
Citation: Pc. Chen et al., FUNDAMENTAL ELECTRICAL-PROPERTIES OF FLUORINATED AND N2O PLASMA-ANNEALED ULTRATHIN SILICON-OXIDES GROWN BY MICROWAVE PLASMA AFTERGLOW OXIDATION AT LOW-TEMPERATURES, Journal of applied physics, 76(9), 1994, pp. 5508-5514
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